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半導體生產設備電力設備化合物半導體

市場調查報告書

商品編碼

1678803

全球碳化矽 (SiC) 半導體市場 - 2025 至 2032 年

Global Silicon Carbide (SiC) Semiconductor Market - 2025-2032

出版日期: 2025年03月11日 | 出版商:

DataM Intelligence | 英文 205 Pages | 商品交期: 最快1-2個工作天內

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簡介目錄

2024 年全球碳化矽 (SiC) 半導體市場規模達到 8.102 億美元，預計到 2032 年將達到 26.3709 億美元，在 2025-2032 年預測期內的複合年成長率為 15.9%。

受高功率、高效率應用需求不斷成長的推動，碳化矽 (SiC) 半導體市場正在經歷強勁成長。碳化矽半導體比傳統矽具有更優異的性能，包括更高的熱導率、更高的能源效率以及在更高電壓和溫度下工作的能力。電動車（EV）、再生能源、航太和工業電力電子等產業的市場發展勢頭強勁。

例如，2024年，意法半導體（STMicroelectronics）推出其第四代STPOWER碳化矽（SiC）MOSFET技術。第四代技術在功率效率、功率密度和穩健性方面帶來了新的基準。新技術在滿足汽車和工業市場需求的同時，也特別針對電動車（EV）動力系統的關鍵零件牽引逆變器進行了最佳化。

此外，2025年，英飛凌科技股份公司在其200毫米碳化矽（SiC）路線圖上取得了重大進展。該公司將於 2025 年第一季向客戶發布首批基於先進的 200 毫米 SiC 技術的產品。

此外，再生能源領域也從 SiC 半導體中受益匪淺。例如，英飛凌科技為太陽能逆變器提供 SiC 解決方案，減少能量損失並提高功率密度。航太工業也取得了進步，美國國家航空暨太空總署的格倫研究中心開發出了能夠在 930°F (500°C) 的溫度下運行數千小時的 SiC 電路，這對於金星探索等任務至關重要。這些實例凸顯了 SiC 在提高效能、降低系統成本和支援全球永續發展目標方面的潛力，使其成為向綠色未來轉型的關鍵驅動力。

動力學

航太和國防應用領域崛起

不斷成長的航太和國防應用是碳化矽 (SiC) 半導體市場的重要驅動力，因為基於 SiC 的設備具有對現代航太和國防系統至關重要的獨特優勢。這些產業需要能夠在高溫、高壓和惡劣環境等極端條件下運作的高性能、可靠、高效的電子元件。

例如，根據德國PCIM Europe 2024年的數據，分析了SiC技術在航太應用中的潛在極限，提出了CoolCAD Electronics為在高空和太空環境中使用而開發的解決方案。碳化矽功率裝置已成為傳統矽基元件的潛在優質替代品，為太空船和電動飛機上的高功率應用帶來了巨大益處。

此外，2024 年，美國海軍航空電子專家希望諾斯羅普·格魯曼公司能夠長期穩定地供應海軍 E-2D 先進鷹眼艦載監視機上雷達電力電子設備所需的碳化矽元件。碳化矽提供比矽 MOSFET 和絕緣柵雙極電晶體 (IGBT) 更好的開關性能，並且隨溫度的變化最小。

高功率應用需求不斷成長

由於碳化矽 (SiC) 具有高熱導率、高擊穿電壓和能源效率等優異的性能，高功率應用的需求不斷成長，極大地推動了碳化矽 (SiC) 半導體市場的發展。這些特性使 SiC 半導體成為電動車 (EV)、再生能源系統和工業電源的理想選擇。

例如，2025 年，美國太空總署格倫研究中心的工程師們開發了能夠承受極端條件的碳化矽 (SiC) 電路，包括長達數千小時的 930°F (500°C) 高溫以及在 -310°F (-190°C) 至 1,490°F (812°C) 的溫度範圍內運行。這些進步對於金星探索至關重要，並在航太、電動車和再生能源系統領域有更廣泛的應用，其中 SiC 處理更高電壓、溫度和輻射的能力提供了顯著的性能和效率優勢。

此外，特斯拉率先在其 Model 3 的逆變器中使用碳化矽（SiC）MOSFET，與傳統矽基電晶體相比，顯著提高了能源效率並透過最大限度地減少功率損耗有助於增加行駛里程；這使得 Model 3 成為首批在動力系統中廣泛採用 SiC 技術的電動車之一。此外，西門子還將SiC元件整合到工業驅動器中，從而提高了性能並降低了能耗。

投資成本高

由於生產流程複雜且資源密集，碳化矽（SiC）半導體的製造成本高是重大限制因素。 SiC晶片比傳統矽晶片更昂貴，6吋SiC晶片的成本約為1,000至2,000美元，而矽晶片的成本為25至50美元。這種巨大的成本差異源自於複雜的晶體生長過程（昇華）和更高的缺陷率，導致產量較低。

例如，意法半導體和 Wolfspeed 因成本高而在擴大 SiC 生產方面面臨挑戰，從而影響了電動車 (EV) 和可再生能源系統的功率設備的定價。因此，Lucid Motors 和 Rivian 等電動車製造商在採用 SiC 逆變器和動力系統時可能會遇到更高的生產成本。

The Silicon Carbide (SiC) semiconductor market is experiencing robust growth, driven by the increasing demand for high-power, high-efficiency applications. SiC semiconductors offer superior properties over traditional silicon, including higher thermal conductivity, greater energy efficiency, and the ability to operate at higher voltages and temperatures. The market is gaining momentum across industries such as electric vehicles (EVs), renewable energy, aerospace, and industrial power electronics.

For instance, in 2024, STMicroelectronics, introducing its fourth generation STPOWER silicon carbide (SiC) MOSFET technology. The Generation 4 technology brings new benchmarks in power efficiency, power density and robustness. While serving the needs of both the automotive and industrial markets, the new technology is particularly optimized for traction inverters, the key component of electric vehicle (EV) powertrains.

Additionally, in 2025, Infineon Technologies AG, has made significant progress on its 200 mm silicon carbide (SiC) roadmap. The company will already release the first products based on the advanced 200 mm SiC technology to customers in Q1 2025. The products, manufactured in Villach, Austria, provide first-class SiC power technology for high-voltage applications, including renewable energies, trains, and electric vehicles.

Moreover, the renewable energy sector benefits significantly from SiC semiconductors. For example, Infineon Technologies supplies SiC solutions for solar inverters, reducing energy losses and improving power density. The aerospace industry also sees advancements, with NASA's Glenn Research Center developing SiC circuits capable of operating at 930°F (500°C) for thousands of hours, critical for missions like Venus exploration. These instances highlight SiC's potential in enhancing performance, reducing system costs, and supporting global sustainability goals, making it a key driver in the transition toward a greener future.

Dynamics

Rising in Aerospace and Defense Applications

The rising aerospace and defense applications are significant drivers of the Silicon Carbide (SiC) Semiconductor Market, as SiC-based devices offer unique advantages that are critical for modern aerospace and defense systems. These industries demand high-performance, reliable, and efficient electronic components that can operate under extreme conditions, such as high temperatures, high voltages, and harsh environments.

For instance, according to PCIM Europe in Germany, 2024, analyzes the potential limits of SiC technology in aerospace applications, proposing the solutions developed by CoolCAD Electronics for usage in high-altitude and space environments. Silicon carbide power devices have emerged as a potentially superior alternative to conventional silicon-based components, offering substantial benefits for high-power applications on spacecraft and electric aircraft.

Additionally, in 2024, U.S. Navy avionics experts are looking to Northrop Grumman Corp. to ensure a long-term and steady supply of silicon carbide components for radar power electronics aboard the Navy's E-2D Advanced Hawkeye carrier-based surveillance aircraft. Silicon Carbide provides better switching performance than silicon MOSFETs and insulated-gate bipolar transistors (IGBTs) with minimal variation versus temperature.

Growing Demand for High-Power Applications

The growing demand for high-power applications significantly drives the Silicon Carbide (SiC) semiconductor market due to SiC's superior properties, including high thermal conductivity, high breakdown voltage, and energy efficiency. These attributes make SiC semiconductors ideal for electric vehicles (EVs), renewable energy systems, and industrial power supplies.

For instance, in 2025, Engineers at NASA's Glenn Research Center have developed silicon carbide (SiC) circuits capable of withstanding extreme conditions, including 930°F (500°C) for thousands of hours and operating across a -310°F (-190°C) to 1,490°F (812°C) temperature range. These advancements are crucial for Venus exploration and have broader applications in aerospace, electric vehicles, and renewable energy systems, where SiC's ability to handle higher voltages, temperatures, and radiation offers significant performance and efficiency benefits.

Additionally, Tesla pioneered the use of Silicon Carbide (SiC) MOSFETs in the inverters of its Model 3, significantly improving energy efficiency and contributing to increased driving range by minimizing power losses compared to traditional silicon-based transistors; this made the Model 3 one of the first electric vehicles to widely adopt SiC technology in its powertrain. Moreover, Siemens integrates SiC components in industrial drives, enhancing performance and lowering energy consumption.

High Investment Costs

The high manufacturing cost of Silicon Carbide (SiC) semiconductors is a significant restraint due to the complex and resource-intensive production processes. SiC wafers are more expensive than traditional silicon wafers, with 6-inch SiC wafers costing around $1,000-$2,000, compared to $25-$50 for silicon wafers. This substantial cost difference arises from the intricate crystal growth process (sublimation) and higher defect rates, resulting in lower yields.

For instance, STMicroelectronics and Wolfspeed face challenges in scaling SiC production due to these high costs, affecting the pricing of power devices for electric vehicles (EVs) and renewable energy systems. Therefore, EV manufacturers like Lucid Motors and Rivian may encounter higher production expenses when adopting SiC inverters and powertrains.

Segment Analysis

The global silicon carbide (sic) semiconductor market is segmented based on type, wafer size, technology, application and region.

SiC Power Modules: Leading the Charge in High-Efficiency Semiconductor Applications

The SiC power modules segment dominates the Silicon Carbide (SiC) semiconductor market due to its ability to handle higher voltages, temperatures, and switching frequencies with improved energy efficiency and power density compared to silicon-based modules. These advantages make SiC power modules ideal for electric vehicles (EVs), renewable energy systems, and industrial power applications, where efficiency and compact designs are critical.

For instance, in 2023, Mitsubishi Electric Corporation had agreed with Coherent Corp to invest USD 500 million (approx. 75 billion yen1) in a new silicon carbide (SiC) business to be carved out from Coherent, aiming to expand its SiC power device business by strengthening vertical collaboration with Coherent, who has been a supplier of SiC substrates to Mitsubishi Electric.

Additionally, in 2022, Fuji Electric Co., announce that it has made a decision to carry out capital investment in Fuji Electric Tsugaru Semiconductor Co., Ltd, one of power semiconductor production bases, for an increase in the production of SiC power semiconductors. Mass production is planned to begin in fiscal 2024. These real-world applications demonstrate how SiC power modules lead the market by supporting the global push for energy-efficient, high-performance power solutions across key industries.

Geographical Penetration

Advancing EVs, Renewables, and Aerospace in North America

North America dominates the Silicon Carbide (SiC) semiconductor market due to the presence of leading industry players, robust electric vehicle (EV) adoption, and significant investments in renewable energy and aerospace sectors. The region's focus on energy efficiency, advanced manufacturing, and technological innovation drives the demand for SiC semiconductors in high-power applications.

For instance, Wolfspeed, a key player based in the U.S., opened the world's largest SiC materials factory in New York to meet the growing demand for SiC power devices. In the EV sector, Tesla, headquartered in California, uses SiC MOSFETs in its Model 3 inverters, improving energy efficiency and extending vehicle range.

The aerospace industry also plays a pivotal role, with NASA's Glenn Research Center developing SiC circuits capable of withstanding extreme temperatures for space exploration missions, such as those targeting Venus. These developments underline North America's leadership in leveraging SiC technology across diverse, high-growth sectors.

Competitive Landscape

The major global players in the market include Infineon Technologies, Littelfuse, ON Semiconductor, Wolfspeed Inc, Fuji Electric, X-FAB, GeneSiC Semiconductor, Mitsubishi Electric, STMicroelectronics, ROHM Semiconductor, and among others.

Key Developments

In 2023, Vitesco Technologies, a leading international manufacturer of modern drive technologies and electrification solutions, has secured strategically important capacities in energy-efficient silicon carbide power semiconductors through a long-term supply partnership with ROHM - worth over one billion US dollars until 2030.
In 2025, Onsemi, had completed its acquisition of the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo for $115 million in cash. The addition of SiC JFET technology will complement onsemi's extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers.

By Type

SiC Discrete Devices
SiC Power Modules
SiC Substrates and Wafers
Others

By Wafer Size

2-inch Wafers
4-inch Wafers
6-inch Wafers
8-inch Wafers

By Technology

Planar SiC Technology
Trench SiC Technology

By Application

Automotive
Consumer Electronics
Industrial
Aerospace & Defense
Telecommunications
Energy & Power
Others

By Region

North America
- US
- Canada
- Mexico
Europe
- Germany
- UK
- France
- Italy
- Spain
- Rest of Europe
South America
- Brazil
- Argentina
- Rest of South America
Asia-Pacific
- China
- India
- Japan
- Australia
- Rest of Asia-Pacific
Middle East and Africa

Why Purchase the Report?

To visualize the global silicon carbide (sic) semiconductor market segmentation based on type, wafer size, technology, application and region.
Identify commercial opportunities by analyzing trends and co-development.
Excel data sheet with numerous data points at the silicon carbide (sic) semiconductor market level for all segments.
PDF report consists of a comprehensive analysis after exhaustive qualitative interviews and an in-depth study.
Product mapping available as excel consisting of key products of all the major players.

The global Silicon Carbide (SiC) Semiconductor market report would provide approximately 70 tables, 61 figures and 205 pages.

Target Audience 2024

Manufacturers/ Buyers
Industry Investors/Investment Bankers
Research Professionals
Emerging Companies

1. Methodology and Scope

1.1. Research Methodology
1.2. Research Objective and Scope of the Report

2. Definition and Overview

3. Executive Summary

3.1. Snippet by Type
3.2. Snippet by Wafer Size
3.3. Snippet by Technology
3.4. Snippet by Application
3.5. Snippet by Region

4. Dynamics

4.1. Impacting Factors
- 4.1.1. Drivers
  - 4.1.1.1. Rising in Aerospace and Defense Applications
  - 4.1.1.2. Growing Demand for High-Power Applications
- 4.1.2. Restraints
  - 4.1.2.1. High Investment Costs
- 4.1.3. Opportunity
- 4.1.4. Impact Analysis

5. Industry Analysis

5.1. Porter's Five Force Analysis
5.2. Supply Chain Analysis
5.3. Pricing Analysis
5.4. Regulatory Analysis
5.5. Sustainable Analysis
5.6. DMI Opinion

6. By Type

6.1. Introduction
- 6.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 6.1.2. Market Attractiveness Index, By Type
6.2. SiC Discrete Devices*
- 6.2.1. Introduction
- 6.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
6.3. SiC Power Modules
6.4. SiC Substrates and Wafers
6.5. Others

7. By Wafer Size

7.1. Introduction
- 7.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 7.1.2. Market Attractiveness Index, By Wafer Size
7.2. 2-inch Wafers*
- 7.2.1. Introduction
- 7.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
7.3. 4-inch Wafers
7.4. 6-inch Wafers
7.5. 8-inch Wafers

8. By Technology

8.1. Introduction
- 8.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 8.1.2. Market Attractiveness Index, By Technology
8.2. Planar SiC Technology*
- 8.2.1. Introduction
- 8.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
8.3. Trench SiC Technology

9. By Application

9.1. Introduction
- 9.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 9.1.2. Market Attractiveness Index, By Application
9.2. Automotive*
- 9.2.1. Introduction
- 9.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
9.3. Consumer Electronics
9.4. Industrial
9.5. Aerospace & Defense
9.6. Telecommunications
9.7. Energy & Power
9.8. Others

10. Sustainability Analysis

10.1. Environmental Analysis
10.2. Economic Analysis
10.3. Governance Analysis

11. By Region

11.1. Introduction
- 11.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Region
- 11.1.2. Market Attractiveness Index, By Region
11.2. North America
- 11.2.1. Introduction
- 11.2.2. Key Region-Specific Dynamics
- 11.2.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.2.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.2.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.2.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.2.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.2.7.1. US
  - 11.2.7.2. Canada
  - 11.2.7.3. Mexico
11.3. Europe
- 11.3.1. Introduction
- 11.3.2. Key Region-Specific Dynamics
- 11.3.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.3.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.3.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.3.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.3.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.3.7.1. Germany
  - 11.3.7.2. UK
  - 11.3.7.3. France
  - 11.3.7.4. Italy
  - 11.3.7.5. Spain
  - 11.3.7.6. Rest of Europe
11.4. South America
- 11.4.1. Introduction
- 11.4.2. Key Region-Specific Dynamics
- 11.4.3. Key Region-Specific Dynamics
- 11.4.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.4.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.4.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.4.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.4.8. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.4.8.1. Brazil
  - 11.4.8.2. Argentina
  - 11.4.8.3. Rest of South America
11.5. Asia-Pacific
- 11.5.1. Introduction
- 11.5.2. Key Region-Specific Dynamics
- 11.5.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.5.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.5.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.5.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.5.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.5.7.1. China
  - 11.5.7.2. India
  - 11.5.7.3. Japan
  - 11.5.7.4. Australia
  - 11.5.7.5. Rest of Asia-Pacific
11.6. Middle East and Africa
- 11.6.1. Introduction
- 11.6.2. Key Region-Specific Dynamics
- 11.6.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.6.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.6.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.6.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application

12. Competitive Landscape

12.1. Competitive Scenario
12.2. Market Positioning/Share Analysis
12.3. Mergers and Acquisitions Analysis

13. Company Profiles

13.1. Infineon Technologies*
- 13.1.1. Company Overview
- 13.1.2. Product Portfolio and Description
- 13.1.3. Financial Overview
- 13.1.4. Key Developments
13.2. Littelfuse
13.3. ON Semiconductor
13.4. Wolfspeed Inc
13.5. Fuji Electric
13.6. X-FAB
13.7. GeneSiC Semiconductor
13.8. Mitsubishi Electric
13.9. STMicroelectronics
13.10. ROHM Semiconductor

LIST NOT EXHAUSTIVE

14. Appendix

14.1. About Us and Services
14.2. Contact Us

02-2729-4219

+886-2-2729-4219

License/價格

相關商品

2025 年全球碳化矽半導體裝置市場報告

碳化矽半導體的世界市場：~2032 年

FAQ

全球碳化矽 (SiC) 半導體市場 - 2025 至 2032 年

Global Silicon Carbide (SiC) Semiconductor Market - 2025-2032

目錄

第 1 章：方法與範圍

第 2 章：定義與概述

第 3 章：執行摘要

第 4 章：動態

第5章：產業分析

第 6 章：按類型

第 7 章：依晶圓尺寸

第 8 章：按技術

第9章：按應用

第 10 章：永續性分析

第 11 章：按地區

第 12 章：競爭格局

第 13 章：公司簡介

第 14 章：附錄