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市場調查報告書
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1630572

WBG 半導體市場成長加速因素:2024 年

Growth Accelerators in the WBG Semiconductor Market, 2024

出版日期: | 出版商: Frost & Sullivan | 英文 58 Pages | 商品交期: 最快1-2個工作天內

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簡介目錄

基板、製程、測試和檢測設備創新對於克服成本、產量比率和可靠性挑戰至關重要

寬能能隙(WBG) 半導體主要由碳化矽 (SiC) 和氮化鎵 (GaN) 基元件組成,是化合物半導體的子集。 WBG 半導體正處於商業化的早期階段,預計在未來十年內將大幅成長。

因此,各種整合設備製造商(IDM)和無晶圓廠製造商正在採用 SiC 和 GaN 裝置進行產品開發。這些製造商正在與汽車、工業、通訊和消費品等多個行業的客戶合作,以利用這一高成長機會。也就是說,只有企業透過研究和創新努力克服與成本、產量比率和可靠性相關的挑戰,WBG 半導體市場在未來十年的預期成長才能實現。

這項研究確定了寬頻隙半導體市場面臨的各種挑戰,並評估了對市場成長影響最大的三大挑戰。我們確定了 WBG 生態系統(在商業化的不同階段)中的關鍵創新,這些創新克服了這些挑戰並加速了 WBG 半導體裝置的市場成長。創新著重於生態系統而不是設備本身。

本研究的重點是確定加速市場成長的槓桿,而不是市場表現或數量方面。對於詳細的市場估計和預測,Frost & Sullivan 發布了有關化合物半導體 (KAA8)、功率半導體 (K9EC) 和 WBG 半導體 (K877) 的報告。

目錄

戰略問題

  • 為什麼成長如此困難?
  • The Strategic Imperative 8(TM)
  • 寬能能隙(WBG)半導體產業三大策略挑戰的影響

成長機會分析

  • 分析範圍
  • 分割
  • 矽半導體和WBG半導體的區別
  • 碳化矽製造價值鏈
  • 氮化鎵製造價值鏈
  • 成長指標
  • WBG 半導體:電力市場將成為未來十年的成長引擎
  • WBG半導體產業概況
  • WBG功率半導體現況:材料、應用、未來趨勢(世界,2024年)
  • WBG 半導體領域的挑戰
  • WBG 半導體市場中成本、產量比率和可靠性問題的重要性
  • 透過增加晶圓尺寸克服成本問題
  • Qromis:工程基板(QST)
  • 英飛凌:300mm 矽基氮化鎵晶圓
  • KISAB:無基面位錯 (BPD) SiC基板
  • DISCO Corporation:用於 GaN 和 SiC基板的 KABRA 工藝
  • AIXTRON SE:用於電源和射頻應用的 G10-GaN 平台
  • SiC Innovation Alliance
  • 是德科技:4881HV 晶圓測試系統
  • Axus科技:CapstoneA CS200平台
  • 生長促進因子
  • 促生長因子分析
  • 成長抑制因素
  • 成長抑制因素分析

加速寬頻隙市場成長的關鍵技術趨勢

  • 從平面 SiC 電晶體結構過渡到溝槽 SiC 電晶體結構,以實現更高的功率密度和更低的導通電阻
  • WBG半導體功率模組封裝趨勢

成長機會領域

  • 成長機會 1:功率 GaN 的進步
  • 成長機會2:最終用戶全行業能源效率法規
  • 成長機會3:下一代功率半導體材料的開發

附錄與後續步驟

  • 成長機會的好處和影響
  • 下一步
  • 圖表清單
  • 免責聲明
簡介目錄
Product Code: KAD1-26

Innovations in Substrate, Process, Testing, and Inspection Equipment are Critical to Overcome Cost, Yield, and Reliability Challenges

Wide-bandgap (WBG) semiconductors-primarily consisting of silicon carbide (SiC) and gallium nitride (GaN)-based devices-are a sub-set of compound semiconductors. WBG semiconductors are at an early stage of commercialization and exhibit significant growth projections over the next 10 years.

For this reason, various integrated device manufacturers (IDMs) and fabless manufacturers are adopting SiC and GaN devices for product development. They are engaging with customers across verticals such as automotive, industrial, communications, and consumer to capitalize on this high-growth opportunity. That said, the projected growth in the WBG semiconductor market during the next 10 years can only happen if companies overcome the challenges associated with cost, yield, and reliability through research and innovation efforts.

This study identifies the spectrum of challenges the WBG semiconductor market faces and rates the top 3 challenges that impact market growth the most. It identifies the main innovations in the WBG ecosystem (which are in different stages of commercialization) that will overcome these challenges and accelerate market growth for WBG semiconductor devices. The innovations are focused more on the ecosystem than the devices themselves.

The study focuses less on market performance and quantitative aspects and more on identifying the levers that will accelerate market growth. For more information on market estimates and forecasts, Frost & Sullivan has published reports on compound semiconductors (KAA8), power semiconductors (K9EC), and WBG semiconductors (K877).

Table of Contents

Strategic Imperatives

  • Why is it Increasingly Difficult to Grow?
  • The Strategic Imperative 8™
  • The Impact of the Top 3 Strategic Imperatives on the Wide-bandgap (WBG) Semiconductor Industry

Growth Opportunity Analysis

  • Scope of Analysis
  • Segmentation
  • Differentiation Between Silicon and WBG Semiconductors
  • SiC Manufacturing Value Chain
  • GaN Manufacturing Value Chain
  • Growth Metrics
  • WBG Semiconductors: The Power Market Functioning as a Growth Engine Throughout the Decade
  • WBG Semiconductor Industry Overview
  • WBG Power Semiconductor Landscape: Materials, Applications, and Future Trends, Global, 2024
  • Challenges in the WBG Semiconductor Landscape
  • Significance of Cost, Yield, and Reliability Issues in the WBG Semiconductor Market
  • Overcoming Cost Challenges with Increased Wafer Size
  • Qromis: Engineered Substrate (QST)
  • Infineon: 300 mm GaN-on-Si Wafer
  • KISAB: Basal Plane Dislocation (BPD)-free SiC Substrates
  • DISCO Corporation: KABRA Process for GaN and SiC Substrates
  • AIXTRON SE: G10-GaN Platform for Power and RF Applications
  • SiC Innovation Alliance
  • Keysight Technologies: 4881HV Wafer Test System
  • Axus Technology: CapstoneA CS200 Platform
  • Growth Drivers
  • Growth Driver Analysis
  • Growth Restraints
  • Growth Restraint Analysis

Key Technology Trends Accelerating WBG Market Growth

  • Move from Planar to Trench SiC Transistor Structures for Higher Power Density and Lower Conduction Resistance
  • Packaging Trends in WBG Semiconductor Power Modules

Growth Opportunity Universe

  • Growth Opportunity 1: Advancements in the Power GaN Landscape
  • Growth Opportunity 2: Power Efficiency Legislations Across End-user Industries
  • Growth Opportunity 3: Developments in Next-generation Power Semiconductor Materials

Appendix & Next Steps

  • Benefits and Impacts of Growth Opportunities
  • Next Steps
  • List of Exhibits
  • Legal Disclaimer