市場調查報告書
商品編碼
1528972
絕緣體上碳化矽 (SiCOI) 薄膜市場 - 按基材、晶圓尺寸、技術、應用和預測,2024 年至 2032 年SiC-on-Insulator (SiCOI) Film Market - By Substrate, By Wafer Size, By Technology, By Application & Forecast, 2024 - 2032 |
在半導體和電子產業日益普及的推動下,絕緣體上碳化矽 (SiCOI) 薄膜市場規模預計 2024 年至 2032 年複合年成長率將超過 90%。例如,2023 年 10 月,Soitec 開設了一家新的電動車碳化矽晶片生產設施。它還聲稱,其專利製造技術允許更頻繁地使用碳化矽基板,從而顯著減少晶圓製造過程中的二氧化碳排放。與傳統矽基基板相比,SiCOI 薄膜具有卓越的電氣性能和熱性能,使其成為電力電子、射頻設備和感測器等高性能應用的理想選擇。這種能力在需要緊湊、節能解決方案的領域尤其有利,例如電動車、再生能源系統和電信。
SiCOI 薄膜生產的可擴展性和成本效益也促進了外延生長和晶圓鍵合等製造技術的進步。這些發展降低了生產成本,並擴大了將碳化矽材料整合到主流半導體製造流程的可行性。擴大採用寬頻隙材料來解決電源管理和能源效率的挑戰也將推動市場成長。
整個產業分為襯底、晶圓尺寸、技術、應用和地區。
在應用方面,由於電動和混合動力車對高效電力電子元件的需求不斷增加,預計到2032年,汽車領域的絕緣體上碳化矽薄膜市場將大幅成長。這些薄膜利用卓越的電氣特性,為汽車應用中的電源轉換和管理系統提供了顯著的優勢。
基於技術,智慧切割領域的 SiCOI 薄膜市場由於其在實現精確和可擴展製造流程方面的強大作用,將在 2024 年至 2032 年期間產生可觀的收入。智慧切割技術涉及使用離子注入和晶圓鍵合技術將超薄碳化矽層轉移到二氧化矽等絕緣基板上。該方法還能夠生產具有客製化厚度和性能的 SiCOI 薄膜,同時最佳化高頻和高功率電子設備的性能。
亞太地區絕緣體上碳化矽薄膜產業預計到 2032 年將呈現可觀的成長速度。中國、日本和韓國等國家推動再生能源採用和電動車製造的政府措施正在加速對 SiCOI 薄膜的需求,這有助於提高多種應用的能源效率和性能。
SiC-on-Insulator (SiCOI) film market size is estimated to register over 90% CAGR from 2024 to 2032, driven by increasing adoption in the semiconductor and electronics industries. For instance, in October 2023, Soitec opened a new production facility for silicon carbide chips for electric vehicles. It also claimed that its patented manufacturing technology allowed the more frequent use of SiC substrates for significantly reducing CO2 emissions from wafer manufacturing. SiCOI films offer superior electrical and thermal properties compared to traditional silicon-based substrates, making them ideal for high-performance applications in power electronics, RF devices, and sensors. This capability is particularly advantageous in sectors demanding compact, energy-efficient solutions, such as electric vehicles, renewable energy systems, and telecommunications.
The scalability and cost-effectiveness of SiCOI film production are also improving the advancements in manufacturing techniques like epitaxial growth and wafer bonding. These developments lower production costs and expand the feasibility of integrating SiC materials into mainstream semiconductor fabrication processes. The increasing adoption of wide bandgap materials to address challenges in power management and energy efficiency will also drive market growth.
The overall industry is classified into substrate, wafer size, technology, application, and region.
In terms of application, the SiC-on-insulator film market from the automotive segment is anticipated to witness substantial growth through 2032 due to the increasing demand for high-efficiency power electronics in electric and hybrid vehicles. These films by leveraging superior electrical properties offer significant advantages in power conversion and management systems within automotive applications.
Based on technology, the SiCOI film market from the smart cut segment will generate notable revenue during 2024-2032 owing to its robust role in enabling precise and scalable manufacturing processes. Smart cut technology involves the transfer of ultra-thin SiC layers onto an insulating substrate, such as silicon dioxide, using ion implantation and wafer bonding techniques. This method also enables the production of SiCOI films with tailored thickness and properties while optimizing performance in high-frequency and high-power electronic devices.
Asia Pacific SiC-on-insulator film industry is slated to depict a decent growth rate through 2032. This is attributed to rapid industrialization and urbanization, leading to increased demand for advanced electronic devices and infrastructure. Government initiatives promoting renewable energy adoption and electric vehicle manufacturing in countries like China, Japan, and South Korea are accelerating the demand for SiCOI films, which help improve energy efficiency and performance in several applications.