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GaAs IC 的世界市場
市場調查報告書
商品編碼
1483208

GaAs IC 的世界市場

The GaAs IC Market
出版日期: | 出版商: Information Network | 英文 | 商品交期: 2-3個工作天內

價格

簡介

半導體產業正在經歷重大轉型，砷化鎵積體電路 (GaAs IC) 在推動這項轉型中發揮著至關重要的作用。

本報告對這一重要領域進行了深入分析，調查和研究了定義 GaAs IC 當前和未來市場格局的各種應用領域、技術進步和市場趨勢。它專為希望在競爭激烈的半導體市場中獲得優勢的專業公司而設計，全面探討了推動 GaAs IC 技術成長和採用的因素。

砷化鎵IC技術趨勢

GaAs IC 的技術進步正在重塑從通訊到國防的各個領域。最顯著的趨勢之一是高頻應用的 GaAs IC 密度的增加。由於具有高電子遷移率，GaAs IC 在射頻 (RF) 和微波電路中具有出色的性能，使其成為 5G 網路和先進衛星通訊等下一代通訊系統的必需品。砷化鎵能夠在更高的頻率和功率水平下高效工作，這使其成為未來無線通訊的關鍵材料。

在光電領域，砷化鎵 IC 憑藉其直接躍遷特性提高了發光應用的效率，從而獲得了廣泛關注。隨著光纖通訊的擴展和先進感測器的普及，這種趨勢尤其明顯，而砷化鎵 IC 提供了無與倫比的速度和可靠性。隨著產業不斷突破資料傳輸和感測技術的界限，GaAs IC 將在實現更高性能標準方面發揮關鍵作用。

國防和航空航太領域也是引進砷化鎵IC技術的主要領域。 GaAs 電路在惡劣條件下的穩健性和高性能使其成為雷達系統、電子戰和其他關鍵防禦技術的理想選擇。此外，人們對能源效率和再生能源解決方案的興趣日益濃厚，也推動了人們對基於砷化鎵的功率放大器和轉換器的興趣，它們比傳統矽基裝置具有更好的效率和熱管理能力。

目錄

第一章簡介

第 2 章執行摘要

第 3 章技術問題

  • 砷化鎵裝置
    • 場效電晶體
    • HEMT
    • HBT
  • 邏輯結構比較
    • 緩衝 FET 邏輯
    • FET 邏輯
    • 容量增強邏輯
    • 直接耦合 FET 邏輯
    • 源極耦合 FET 邏輯
  • 主要問題
    • 晶圓製造
    • 蝕刻坑密度 (HPD)
  • 設備
    • 離子注入機（注入機）
    • 光刻
    • 蝕刻
    • 氣相沉積
    • 快速熱處理
  • 套餐
    • 封裝類型
    • 附著力
  • 考試
  • 設計

第四章GaAs IC的應用領域

  • 簡介
    • 頻率較高的趨勢
    • 從類比調變到數位調變的轉變
    • 分立元件和矽基 IC
  • 市場
    • 通訊系統
    • 電視系統
    • 計算
    • 數據通信
    • 汽車
    • 自動測試設備
    • 軍事

第 5 章 IC 供應商與最終使用者問題

  • 簡介
  • 與矽的競爭
  • 與日本公司的競爭
  • 台灣市場勢頭
  • 韓國市場勢頭強勁
  • 晶圓尺寸
  • 與 SiGe 的競爭
    • 簡介
    • 技術
    • 應用領域

第六章市場預測

  • 促進因素
  • 市場預測的假設
  • 砷化鎵 IC 市場預測
  • SiGe IC 市場預測
  • 最終用途市場

第七章 GaAs IC 廠商概況

Introduction

The semiconductor industry is on the cusp of significant transformations, with Gallium Arsenide Integrated Circuits (GaAs ICs) playing a pivotal role in driving these changes. Our report, "The GaAs IC Market," offers an in-depth analysis of this crucial segment, exploring the multifaceted applications, technological advancements, and market dynamics that define the current and future landscape of GaAs ICs. Designed for professionals looking to stay ahead in the competitive semiconductor market, this report provides comprehensive insights into the factors propelling the growth and adoption of GaAs IC technology.

Trends in GaAs IC Technology

The technological advancements in GaAs ICs are reshaping various sectors, from telecommunications to defense. One of the most prominent trends is the increasing integration of GaAs ICs in high-frequency applications. Thanks to their high electron mobility, GaAs ICs offer superior performance in RF and microwave circuits, making them indispensable for next-generation communication systems such as 5G networks and advanced satellite communications. The ability of GaAs to operate efficiently at higher frequencies and power levels positions it as a key material for the future of wireless communication.

In the realm of optoelectronics, GaAs ICs are gaining traction due to their direct bandgap property, which enhances their efficiency in light-emitting applications. This trend is particularly notable in the expansion of fiber optic communications and the proliferation of advanced sensors, where GaAs ICs provide unparalleled speed and reliability. As industries continue to push the boundaries of data transmission and sensing technologies, GaAs ICs are set to play a critical role in achieving higher performance standards.

The defense and aerospace sectors are also major adopters of GaAs IC technology. The robustness and high-performance capabilities of GaAs circuits under extreme conditions make them ideal for applications in radar systems, electronic warfare, and other critical defense technologies. Additionally, the growing focus on energy efficiency and renewable energy solutions has spurred interest in GaAs-based power amplifiers and converters, which offer superior efficiency and thermal management compared to traditional silicon-based devices.

The Need to Purchase This Report

For businesses and professionals navigating the semiconductor landscape, understanding the intricacies of the GaAs IC market is essential. This report provides a detailed analysis of current market trends, technological innovations, and key drivers shaping the GaAs IC industry. By purchasing this report, stakeholders will gain a strategic advantage through comprehensive market forecasts, competitive landscape evaluations, and insights into the latest advancements in GaAs technology.

Our report offers strategic recommendations for leveraging GaAs IC technology to enhance product performance and capture market opportunities. It delves into the applications of GaAs ICs across various sectors, including telecommunications, optoelectronics, and defense, providing readers with actionable intelligence to inform investment and development decisions. Companies looking to invest in GaAs technology or expand their market presence will find this report invaluable for identifying growth areas and understanding competitive dynamics.

In essence, "The GaAs IC Market" report is an indispensable resource for industry professionals, engineers, researchers, and business leaders. It equips readers with the knowledge needed to navigate the complexities of the GaAs IC market and capitalize on emerging opportunities. By understanding the trends and technological advancements detailed in this report, stakeholders can make informed decisions that drive innovation and growth in the semiconductor industry.

Table of Contents

Chapter 1. Introduction

Chapter 2. Executive Summary

  • 2.1. Summary of Major Issues
  • 2.2. Summary of Market Forecast

Chapter 3. Technology Issues

  • 3.1. GaAs Devices
    • 3.1.1. FETs
    • 3.1.2. HEMTs
    • 3.1.3. HBT
  • 3.2. Comparison of Logic Structures
    • 3.2.1. Buffered FET Logic
    • 3.2.2. FET Logic
    • 3.2.3. Capacitively Enhanced Logic
    • 3.2.4. Direct-Coupled FET Logic
    • 3.2.5. Source-Coupled FET Logic
  • 3.3. Material Issues
    • 3.3.1. Wafer Production
    • 3.3.2. Etch Pit Densities
  • 3.4. Equipment
    • 3.4.1. Implanters
    • 3.4.2. Lithography
    • 3.4.3. Etching
    • 3.4.4. Deposition
    • 3.4.5. Rapid Thermal Processing
  • 3.5. Packaging
    • 3.5.1. Package Types
    • 3.5.2. Bonding
  • 3.6. Testing
  • 3.7. Design

Chapter 4. Applications for GaAs ICs

  • 4.1. Introduction
    • 4.1.1. The Trend Toward Higher Frequencies
    • 4.1.2. Transition from Analog to Digital Modulation
    • 4.1.3. Discrete Components and Silicon-Based ICs
  • 4.2. Markets
    • 4.2.1. Telecommunications Systems
    • 4.2.2. Television Systems
    • 4.2.3. Computing
    • 4.2.4. Data Communications
    • 4.2.5. Automotive
    • 4.2.6. Automated Test Equipment
    • 4.2.7. Military

Chapter 5. IC Supplier and End-User Issues

  • 5.1. Introduction
  • 5.2. Competing Against Silicon
  • 5.3. Competing Against The Japanese
  • 5.4. Taiwan's Market Momentum
  • 5.5. Korea's Market Momentum
  • 5.6. Wafer Sizes
  • 5.7. Competing Against SiGe
    • 5.7.1. Introduction
    • 5.7.2. Technology
      • 5.7.2.1. Strained Silicon
      • 5.7.2.2. Device Manufacturing
    • 5.7.3. Applications
      • 5.7.3.1. Wireless LAN
      • 5.7.3.2. WiMAX
      • 5.7.3.3. Bluetooth
      • 5.7.3.4. Cellular
      • 5.7.3.5. GPS

Chapter 6. Market Forecast

  • 6.1. Driving Forces
  • 6.2. Market Forecast Assumptions
  • 6.3. GaAs IC Market Forecast
  • 6.4. SiGe IC Market Forecast
  • 6.5. End Application Market

Chapter 7. Profile of GaAs IC Manufacturers

LIST OF TABLES

  • 5.1. Cost Comparison for GaAs Structures
  • 5.2. A Comparison of SiGe BiCMOS, RF CMOS, and InGaP/GaAs
  • 6.1. Worldwide Merchant GaAs IC Market Forecast By Device Type
  • 6.2. Worldwide Merchant Market Forecast By Geographical Region
  • 6.3. Worldwide Merchant Market Forecast By Application
  • 6.4. Market Shares of Merchant Participants-2013

LIST OF FIGURES

  • 3.1. Schematic of GaAs MESFET
  • 3.2. Schematic of GaAs HEMT Device
  • 3.3. Schematic of GaAs HBT Device
  • 3.4. Schematic of GaAs HBT Device
  • 3.5. Symbolic Representations of Various GaAs Transistor Type
  • 3.6. Schematic of BFL Logic Gate
  • 3.7. Schematic of FETL Logic Gate
  • 3.8. Schematic of CEL Logic Gate
  • 3.9. Schematic of DCFL Logic Gate
  • 3.10. Schematic of SCFL Logic Gate
  • 3.11. Full wafer EPD mapping of LEC and VGF wafers
  • 3.12. Mesoscopic EL2 mapping of LEC and VGF wafers
  • 3.13. pHEMT MMIC Process Flow Chart
  • 3.14. 0.15 Micron 3MI Process Cross Section
  • 3.15. InGaP HBT Process
  • 5.1. Comparison of Die Costs of Si and GaAs
  • 5.2. Strained Silicon Germanium Technology
  • 5.3. Fourth Generation Of Strain Technology
  • 5.4. Performance Versus Germanium Content
  • 5.5. Bulk Versus SOI Strain Method
  • 6.1. Worldwide Merchant GaAs IC Market Forecast
  • 6.2. Worldwide GaAs Merchant Market Forecast By Geographical Region
  • 6.3. Worldwide GaAs Merchant Market Forecast By Application
  • 6.4. Global Handset Market
  • 6.5. Migration Of PA's In Handset Market
  • 6.6. CMOS Replacement Of Bipolar And GaAs
  • 6.7. Worldwide SiGe Market Forecast