市場調查報告書
商品編碼
1452903
日本、韓國和中國的第三代半導體(SiC)產業政策Industry Policies of Third-Generation Semiconductors - SiC - in Japan, Korea, and China |
近年來,第三代半導體,特別是碳化矽(SiC),受到市場的廣泛關注。 這種興趣的增加主要是由於 SiC 的獨特特性,包括其承受更高電壓和溫度、提高功率轉換效率以及在高頻下實現卓越傳輸效率的能力。 這些特性使 SiC 成為各種應用的理想選擇,包括電動車 (EV)、再生能源、光電子、衛星通訊、國防和軍事應用。 此外,由於SiC材料的取得成為挑戰,一些國家已將上游晶體生長材料視為國家半導體策略的重要戰略資源。
本報告詳細分析了日本、韓國、中國的SiC產業政策,並簡要討論了美國、歐盟(EU)、日本等主要國家SiC的未來趨勢、韓國、中國。
In recent years, there has been a notable surge in market attention directed towards third-generation semiconductors, particularly Silicon Carbide (SiC). This heightened interest is primarily attributed to the unique characteristics of SiC, including its capability to withstand higher voltages and temperatures, provide enhanced power conversion efficiency, and achieve superior transmission efficiency at high frequencies. These attributes position SiC as an ideal choice for various applications, including electric vehicles (EV), renewable energy, optoelectronics, satellite communications, national defense, and military applications. Furthermore, the challenging acquisition of SiC materials has prompted several countries to recognize upstream crystal growth materials as crucial strategic resources within their national semiconductor strategies. This report provides an in-depth analysis and overview of SiC industry policies in Japan, Korea, and China, along with a concise examination of SiC's future development trends in major countries: the United States, the European Union (EU), Japan, Korea, and China.