市場調查報告書
商品編碼
1192495
面向人工智能 (AI) 的存儲器專利態勢分析 (2023)Memory for Artificial Intelligence Patent Landscape Analysis 2023 |
本報告分析了與人工智能 (AI) 存儲器相關的最新專利情況,概述了適用於人工智能/機器學習 (AI/ML) 應用的存儲器技術,並提供了近期專利申請和批准的概述. 我們將彙編和發布主要知識產權公司(專利所有者/申請人)的趨勢、細分趨勢、概況和專利組合等信息。
近年來,神經擬態計算作為後摩爾定律時代的一項很有前途的技術出現了。 神經形態計算系統的特點是高連接性和並行性,以及相對較低的功耗和內存處理。 為了在硬件中實現這樣的系統,我們需要模擬生物有機體的人工神經元和突觸。 兩者都應該是節能的、可擴展的,並且能夠實施相關的學習規則以促進大規模的神經形態功能。 為此,近年來人們進行了□□許多嘗試,使用 MRAM、PCM、ReRAM(存儲器)、CB-RAM、FeRAM、FeFET 和突觸晶體管等新型存儲器來創建人工神經元和突觸。
因此,Knowmade 探索了與人工智能/機器學習 (AI/ML) 應用的存儲器技術相關的專利格局,從材料和設備到使用它們的系統和方法,再到存儲器技術(ReRAM、PCM、MRAM、FRAM/FeFET、閃存、DRAM、SRAM 等),我們正在推出一份新報告,目的是獲得全面的了解。
本報告旨在回答以下問題:
該專利涵蓋新興的基於電阻的內存技術(ReRAM、PCM、MRAM)、基於極化的新興內存技術(FRAM/FeFET),以及為神經形態計算開發的內存技術的傳統內存技術。(閃存、DRAM、SRAM) ),其他存儲技術(突觸離子晶體管,基於二維或一維材料的設備,混合材料,鈣鈦礦,納米粒子,量子物理學,有機材料,斯格明子等),未指定(未指定存儲技術類型)。
所有新興存儲器目前都在調查中,FRAM 保護近年來呈上升趨勢。 RRAM是世界上擁有最多發明和可執行專利的技術。
知識產權報告包含八家主要知識產權公司的知識產權概況:IBM、三星、應用材料、TDK、SK 海力士、旺宏、惠普和 TetraMem。
我們分析了每家公司與 AI 存儲器技術相關的專利組合,並提供了諸如其優勢、增強潛力、知識產權活動水平、主要知識產權合作、近期專利活動和主要發明增加等信息。
該報告包括一個廣泛的 Excel 數據庫,其中包含已分析的 1,300 多個專利家族(發明)。 這個有用的專利數據庫是多標準可搜索的,包括專利公開號、最新在線數據庫的超鏈接(文本、法律狀態等)、優先權日期、標題、摘要、專利受讓人和專利當前狀態。包括合法狀態,9 段(RRAM、PCM、MRAM、FeRAM/FeFET、閃存、DRAM、SRAM、其他、未指定)。
Are there specific memory technologies claimed in patents that are more suitable than others for artificial intelligence/machine learning (AI/ML) applications? Who are the key patent owners and the most active patent applicants in the field?
In recent years, neuromorphic computing has emerged as a promising technology in the post-Moore's law era. Neuromorphic computing systems are highly connected and parallel and consume relatively low power and processes in memory. Artificial neurons and synapses that mimic biological ones are needed to implement such a system on hardware. Both must be power-efficient, scalable, and capable of implementing relevant learning rules to facilitate large-scale neuromorphic functions. To this end, numerous efforts have been made over the last few years to create artificial neurons and synapses using emerging memories, including magnetoresistive random-access memory (MRAM), phase-change memory (PCM), resistive random-access memory (ReRAM or memristors), conductive bridging random-access memory (CB-RAM), ferroelectric random-access memory (FeRAM), ferroelectric field-effect transistor (FeFET), synaptic transistors, and others.
In this context, Knowmade is releasing a new report that aims to provide a comprehensive view of the patent landscape related to memory technologies for artificial intelligence/machine learning (AI/ML) applications, from materials and devices to the systems and methods that use them, categorized into memory technologies (ReRAM, PCM, MRAM, FRAM/FeFET, Flash, DRAM, SRAM, etc.).
In this report, we aim to answer the following questions:
Patent landscape analysis is a powerful tool for understanding the competitive and technological environment. It makes it possible to identify new players in emerging industries long before they enter the market while providing a better understanding of their expertise and know-how of a specific technology. Overall, patenting activity (patent filings) reflects the level of R&D investment made by a country or player in a specific technology while providing clues as to the technology readiness level reached by the main IP players. What's more, the technology coverage and the geographical coverage of the patent portfolios are closely related to the business strategy of IP players.
A mix of IC and memory players, universities, and R&D centers are competing for innovation at all stages of the R&D ladder. Industrial companies' patenting activity took off in 2015 after R&D efforts were focused on research and fundamental physics knowledge. American and Korean industrials and Chinese and Korean universities mainly hold patents. Top patent assignees are well-established semiconductor companies, and IBM and Samsung have a leading IP position. New players such as Applied Materials, TSMC, GlobalFoundries, TetraMem, and ICLeague are entering the game, and their intellectual property (IP) may become important in the coming years.
The patents have been categorized according to the memory technologies developed for neuromorphic computation: resistance-based emerging memory technology (ReRAM, PCM, MRAM), polarization-based emerging memory technology (FRAM/FeFET), traditional memory technologies (Flash, DRAM, SRAM), other memory technologies (synaptic ionic transistor, devices based on 2D or 1D materials, hybrid materials, perovskites, nanoparticles, quantum physics, organic materials, skyrmions, etc.), and not specific (type of memory technology not specified).
All emerging memories are currently under investigation, with an upward trend for protecting FRAM in recent years. RRAM is the technology with the most inventions and the most significant number of enforceable patents worldwide.
The IP report includes the IP profile of eight key IP players: IBM, Samsung, Applied Materials, TDK, SK hynix, Macronix, HP, and TetraMem.
Each player's patent portfolio related to memory technologies for AI applications is analyzed to provide an overview of its strengths, potential for reinforcement, level of IP activity, main IP collaborations, recent patenting activity, and inventions that stand out.
This report includes an extensive Excel database with the 1,300+ patent families (inventions) analyzed in this study. This useful patent database allows for multicriteria searches and includes patent publication numbers, hyperlinks to an updated online database (original documents, legal status, etc.), priority date, title, abstract, patent assignees, patent's current legal status, and nine segments (RRAM, PCM, MRAM, FeRAM/FeFET, Flash, DRAM, SRAM, other, not specific).