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市場調查報告書
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1698409

全球氮化鎵裝置市場：2025 年至 2030 年預測

Global Gallium Nitride Device Market - Forecasts from 2025 to 2030
出版日期: | 出版商: Knowledge Sourcing Intelligence | 英文 140 Pages | 商品交期: 最快1-2個工作天內

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簡介目錄

預計 2025-2030 年預測期內氮化鎵裝置市場複合年成長率為 4.02%。

氮化鎵，俗稱GaN，用於半導體元件的開發。 GaN 是一種堅韌但機械穩定的寬頻寬能能隙半導體，具有高介電擊穿強度和快速的開關速度。它的高熱導率和低電阻率使其成為電子設備和其他應用的理想半導體。透過在矽表面形成GaN外延層，矽製造商不再需要專門化其現有的製造基礎設施，從而降低了生產成本。該層還可以低成本地生產更大的矽晶片。此外，基於 GaN 技術的功率元件的性能比基於矽的功率元件高出許多。因此，GaN因其優越的性能而作為半導體越來越受歡迎。

市場趨勢：

  • 由於家用電子電器需求的不斷成長以及可再生能源解決方案的日益普及，預計全球氮化鎵 (GaN) 產業將在預測期內顯著成長。推動這一成長的主要因素是消費性電子產業的蓬勃發展和對通訊服務日益成長的需求。可支配收入的增加預計也將推動家用電器的需求。
  • 此外，技術進步大大增加了對通訊服務的需求，進一步推動了市場成長。根據思科的報告，IP 流量預計將成長四倍，從 2017 年的每年 1.5 Zetta位元組增加到 2022 年的每年 4.8 Zetta位元組。為了滿足日益成長的需求，無線產業正在從 4G 遷移到 5G 網路，預計這將在預測期內推動對 GaN 的需求。
  • 亞太地區 GaN 市場可望強勁成長。可支配收入的增加和技術的廣泛應用正在推動家用電器的需求，尤其是在該地區。尤其是智慧型設備用戶數量正在快速成長。根據bankmycell.com預測，2021年全球智慧型手機用戶將達38億，佔全球人口的48.3%，而行動電話用戶將達48.8億，佔全球人口的62.07%。總合52.8億人擁有行動裝置。由於智慧型設備日益普及，預計氮化鎵產業在預測期內將快速擴張。該領域的技術創新也有望為GaN市場帶來新的成長機會。
  • 亞太地區的GaN市場預計將出現良好的成長。工業化加上低廉的人事費用、高生產潛力以及有利的外包政策，推動了該地區家電製造公司的快速成長。此外，可支配收入的增加刺激了對智慧型設備和其他家用電器的需求，進一步推動了市場成長。

報告中介紹的主要企業包括英飛凌科技股份公司、博通公司、安森美半導體公司、戴樂格半導體公司（瑞薩電子）、Wolfspeed 公司、Qorvo 公司、諾斯羅普·格魯曼公司和德州儀器。

本報告的主要優點

  • 深刻分析：獲得涵蓋主要地區和新興地區的深入市場洞察，重點關注客戶群、政府政策和社會經濟因素、消費者偏好、垂直行業和其他子區隔。
  • 競爭格局：了解全球主要企業所採用的策略策略，並了解正確策略帶來的潛在市場滲透。
  • 市場趨勢和促進因素：探索動態因素和關鍵市場趨勢以及它們將如何影響市場的未來發展。
  • 可行的建議：利用洞察力進行策略決策，在動態環境中開闢新的業務流和收益。
  • 受眾範圍廣泛：Start-Ups、研究機構、顧問公司、中小企業和大型企業都認為它有用且具有成本效益。

它有什麼用途？

產業和市場考量、商業機會評估、產品需求預測、打入市場策略、地理擴張、資本支出決策、法律規範與影響、新產品開發、競爭影響

研究範圍

  • 2022 年至 2024 年的歷史資料和 2025 年至 2030 年的預測資料
  • 成長機會、挑戰、供應鏈前景、法律規範與趨勢分析
  • 競爭定位、策略和市場佔有率分析
  • 收益成長和預測分析（包括國家在內的細分市場和地區）
  • 公司概況（策略、產品、財務資訊、主要趨勢等）

目錄

第1章 引言

  • 市場概覽
  • 市場定義
  • 研究範圍
  • 市場區隔
  • 貨幣
  • 先決條件
  • 基準年和預測年時間表
  • 相關人員的主要利益

第2章調查方法

  • 研究設計
  • 研究過程

第3章執行摘要

  • 主要發現

第4章 市場動態

  • 市場促進因素
  • 市場限制
  • 波特五力分析
  • 產業價值鏈分析
  • 分析師觀點

5. 全球氮化鎵裝置市場（依晶圓尺寸）

  • 介紹
  • 2英吋
  • 4吋
  • 6吋
  • 超過 6 英寸

第6章 全球氮化鎵裝置市場（依元件類型）

  • 介紹
  • 功率半導體裝置
  • 射頻半導體裝置
  • 光半導體裝置

7. 全球氮化鎵裝置市場（按應用）

  • 介紹
  • 射頻
  • 電力電子
  • 光電子
  • 家電
  • 通訊
  • 其他

第8章全球氮化鎵裝置市場（依產業垂直分類）

  • 介紹
  • 家電
  • 通訊
  • 車
  • 航太和國防
  • 其他

9. 全球氮化鎵裝置市場（按地區）

  • 介紹
  • 美洲
    • 按晶圓尺寸
    • 依設備類型
    • 按應用
    • 按行業
    • 按國家
  • 歐洲、中東和非洲
    • 按晶圓尺寸
    • 依設備類型
    • 按應用
    • 按行業
    • 按國家
  • 亞太地區
    • 按晶圓尺寸
    • 依設備類型
    • 按應用
    • 按行業
    • 按國家

第10章競爭格局及分析

  • 主要企業和策略分析
  • 市場佔有率分析
  • 合併、收購、協議和合作
  • 競爭儀錶板

第11章 公司簡介

  • Infineon Technologies AG
  • Broadcom Inc.
  • ON Semiconductor Corporation
  • Dialog Semiconductor（Renesas Electronics）
  • Wolfspeed, Inc.
  • Qorvo, Inc.
  • Northrop Grumman
  • Texas Instruments
  • Sumitomo Electric Industries Ltd.
  • GaN Systems Inc.
  • MACOM
  • Mitsubishi Electric Corporation
  • Epistar

第12章 附錄

  • 貨幣
  • 先決條件
  • 基準年和預測年時間表
  • 相關人員的主要利益
  • 調查方法
  • 簡稱
簡介目錄
Product Code: KSI061612651

The global Gallium Nitride Device market is expected to grow at a compound annual growth rate of 4.02% over the forecast period of 2025-2030.

Gallium Nitride, commonly known as GaN, is used in developing semiconductor devices. GaN is a rigorous yet mechanically stable wide bandgap semiconductor with higher breakdown strength and faster switching speed. Its higher thermal conductivity and low resistance make it an ideal semiconductor for electronics and other devices. By creating a GaN epilayer on a silicon surface, silicon manufacturer can reduce their manufacturing cost by removing the need for specialization with the existing manufacturing infrastructure. This layer also enables the production of larger silicon wafers at a lower cost. Furthermore, it has been observed that the power devices based on GaN technology outperform those based on silicon at a noteworthy rate. Hence, GaN is gaining more popularity as a semiconductor due to its better performance.

Market Trends:

  • The global gallium nitride (GaN) industry is expected to experience significant growth during the forecast period, driven by the rising demand for consumer electronics and the increasing adoption of renewable energy solutions. The primary factor fueling this growth is the booming consumer electronics sector and the expanding need for telecommunication services. Higher disposable incomes are also expected to boost the demand for consumer electronics.
  • Additionally, technological advancements have significantly increased the demand for telecommunication services, further propelling market growth. According to a report by Cisco, IP traffic is projected to quadruple, reaching 4.8 Zettabytes per year in 2022, up from 1.5 Zettabytes per year in 2017. To meet this growing demand, the wireless industry is transitioning from 4G to 5G networks, which is expected to drive the demand for GaN during the forecast period.
  • Asia-Pacific is poised for strong growth in the GaN market. Rising disposable incomes and increased technology penetration have boosted the demand for consumer electronics, particularly in this region. Smart devices, in particular, have seen a surge in users. According to bankmycell.com, there were 3.8 billion smartphone users in 2021, representing 48.3% of the global population, while mobile phone users totaled 4.88 billion, or 62.07% of the global population. In total, 5.28 billion people owned mobile devices. The growing adoption of smart devices is expected to drive the gallium nitride industry's expansion at a rapid pace during the forecast period. Technological innovations in the sector are also expected to create new growth opportunities for the GaN market.
  • The Asia-Pacific GaN market is projected to experience lucrative growth. Industrialization, coupled with low labor costs, high production potential, and favorable outsourcing policies, has led to the proliferation of consumer electronics manufacturing companies in the region. Additionally, rising disposable incomes have increased the demand for smart devices and other consumer electronics, further supporting market growth.

Some of the major players covered in this report include Infineon Technologies AG, Broadcom Inc., ON Semiconductor Corporation, Dialog Semiconductor (Renesas Electronics), Wolfspeed, Inc., Qorvo, Inc., Northrop Grumman, Texas Instruments, among others.

Key Benefits of this Report:

  • Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
  • Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
  • Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
  • Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
  • Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

  • Historical data from 2022 to 2024 & forecast data from 2025 to 2030
  • Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
  • Competitive Positioning, Strategies, and Market Share Analysis
  • Revenue Growth and Forecast Assessment of segments and regions including countries
  • Company Profiling (Strategies, Products, Financial Information, and Key Developments among others)

Global Gallium Nitride Device Market is analyzed into the following segments:

By Wafer Size

  • 2 inch
  • 4 inch
  • 6 inch
  • More than 6 inch

By Type of Device

  • Power Semiconductor Device
  • RF Semiconductor Device
  • Opto-Semiconductor Device

By Application

  • Radio Frequency
  • Power Electronics
  • Optoelectronics
  • Consumer electronics
  • Telecommunications
  • Others

By Industry

  • Consumer Electronics
  • Telecommunication
  • Automotive
  • Aerospace and Defense
  • Others

By Region

  • Americas
  • US
  • Europe, Middle East, and Africa
  • Germany
  • Netherlands
  • Others
  • Asia Pacific
  • China
  • Japan
  • Taiwan
  • South Korea
  • Others

TABLE OF CONTENTS

1. INTRODUCTION

  • 1.1. Market Overview
  • 1.2. Market Definition
  • 1.3. Scope of the Study
  • 1.4. Market Segmentation
  • 1.5. Currency
  • 1.6. Assumptions
  • 1.7. Base and Forecast Years Timeline
  • 1.8. Key benefits for the stakeholders

2. RESEARCH METHODOLOGY

  • 2.1. Research Design
  • 2.2. Research Process

3. EXECUTIVE SUMMARY

  • 3.1. Key Findings

4. MARKET DYNAMICS

  • 4.1. Market Drivers
  • 4.2. Market Restraints
  • 4.3. Porter's Five Forces Analysis
    • 4.3.1. Bargaining Power of Suppliers
    • 4.3.2. Bargaining Power of Buyers
    • 4.3.3. Threat of New Entrants
    • 4.3.4. Threat of Substitutes
    • 4.3.5. Competitive Rivalry in the Industry
  • 4.4. Industry Value Chain Analysis
  • 4.5. Analyst View

5. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY WAFER SIZE

  • 5.1. Introduction
  • 5.2. 2 inch
  • 5.3. 4 inch
  • 5.4. 6 inch
  • 5.5. More than 6 inch

6. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY TYPE OF DEVICE

  • 6.1. Introduction
  • 6.2. Power Semiconductor Device
  • 6.3. RF Semiconductor Device
  • 6.4. Opto-Semiconductor Device

7. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY APPLICATION

  • 7.1. Introduction
  • 7.2. Radio Frequency
  • 7.3. Power Electronics
  • 7.4. Optoelectronics
  • 7.5. Consumer electronics
  • 7.6. Telecommunications
  • 7.7. Others

8. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY INDUSTRY

  • 8.1. Introduction
  • 8.2. Consumer Electronics
  • 8.3. Telecommunication
  • 8.4. Automotive
  • 8.5. Aerospace and Defense
  • 8.6. Others

9. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY GEOGRAPHY

  • 9.1. Introduction
  • 9.2. Americas
    • 9.2.1. By Wafer Size
    • 9.2.2. By Type of Device
    • 9.2.3. By Appliccation
    • 9.2.4. By Industry
    • 9.2.5. By Country
      • 9.2.5.1. US
  • 9.3. Europe, Middle East & Africa
    • 9.3.1. By Wafer Size
    • 9.3.2. By Type of Device
    • 9.3.3. By Appliccation
    • 9.3.4. By Industry
    • 9.3.5. By Country
      • 9.3.5.1. Germany
      • 9.3.5.2. Netherlands
      • 9.3.5.3. Others
  • 9.4. Asia Pacific
    • 9.4.1. By Wafer Size
    • 9.4.2. By Type of Device
    • 9.4.3. By Appliccation
    • 9.4.4. By Industry
    • 9.4.5. By Country
      • 9.4.5.1. China
      • 9.4.5.2. Japan
      • 9.4.5.3. Taiwan
      • 9.4.5.4. South Korea
      • 9.4.5.5. Others

10. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 10.1. Major Players and Strategy Analysis
  • 10.2. Market Share Analysis
  • 10.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 10.4. Competitive Dashboard

11. COMPANY PROFILES

  • 11.1. Infineon Technologies AG
  • 11.2. Broadcom Inc.
  • 11.3. ON Semiconductor Corporation
  • 11.4. Dialog Semiconductor (Renesas Electronics)
  • 11.5. Wolfspeed, Inc.
  • 11.6. Qorvo, Inc.
  • 11.7. Northrop Grumman
  • 11.8. Texas Instruments
  • 11.9. Sumitomo Electric Industries Ltd.
  • 11.10. GaN Systems Inc.
  • 11.11. MACOM
  • 11.12. Mitsubishi Electric Corporation
  • 11.13. Epistar

12. APPENDIX

  • 12.1. Currency
  • 12.2. Assumptions
  • 12.3. Base and Forecast Years Timeline
  • 12.4. Key benefits for the stakeholders
  • 12.5. Research Methodology
  • 12.6. Abbreviations