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市場調查報告書
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1437967

RF GaN：市場佔有率分析、產業趨勢與統計、成長預測（2024-2029）

RF GaN - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2024 - 2029)
出版日期: | 出版商: Mordor Intelligence | 英文 127 Pages | 商品交期: 2-3個工作天內

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簡介目錄

RF GaN市場規模預計到2024年為17億美元，預計到2029年將達到40.3億美元，在預測期內（2024-2029年）複合年成長率為18.76%。

RF GaN 市場

由於在廣泛的即時連結設備和應用中使用射頻氮化鎵的好處，預計更多行業將使用物聯網 （IoT） 技術，預計將推動市場增長。 隨著氮化鎵技術的不斷發展，氮化鎵可在更複雜的應用中實現更高的頻率，例如相控陣、雷達、有線電視 （CATV） 的基站發射機和接收站、超小孔徑終端 （VSAT） 和國防通信。

主要亮點

  • RF GaN 在無線基礎設施中發揮關鍵作用，可提高效率並增加頻寬以支援不斷提高的資料傳輸速率。 RF GaN 市場主要由 5G 的日益普及和無線通訊的進步推動。通訊業者也可能受益於 GaN 功率電晶體的增加使用。
  • 電動車中擴大採用射頻氮化鎵也是推動該市場需求的關鍵因素之一。碳化矽元件用於電動巴士、計程車、卡車和小客車的車載電池充電器。此外，越來越多有利於電動車市場的政府法律正在刺激對射頻氮化鎵市場的需求。
  • 開發自動駕駛汽車和無人機所需的基礎設施是推動 RF GaN 技術需求的另一個因素。因此，隨著各種應用（尤其是軍事和國防）自動駕駛汽車和無人機的日益普及和開發，預計將在預測期內進一步增加 RF GaN 裝置的採用。
  • GaN 固有的材料優勢伴隨著一些相關的製造課題，包括成本和最佳化裝置加工和封裝。必須解決其他問題，例如電荷捕獲和電流崩壞，以增加這些設備的採用。儘管基於射頻GaN的裝置（性能和產量比率）已顯著提高，但阻礙氮化鎵/碳化矽（GaN-on-SiC）引入主流應用（例如無線通訊基地台）的障礙仍然存在。
  • COVID-19感染疾病影響了供應線和通訊業。這大大阻礙了5G在通訊領域的普及。在這場危機期間，消費者預計將繼續使用行動電話，但大多數人可能無法進一步投資於這項仍處於起步階段的技術。
  • 資料消費量的快速成長正在推動商業網路的成長，並鼓勵網路供應商採用4G和5G等下一代網路。根據思科視覺網路指數，全球行動資料流量預計複合年成長率為 46%，到 ​​2022 年將達到每月 77.5Exabyte。
  • 世界各地的組織都在創新新產品並擴展業務。 例如，創新射頻和微波功率解決方案供應商 Integra 於 2022 年 6 月宣佈，它開始向美國和歐洲的客戶運送其突破性的 100V 射頻氮化鎵技術。 該公司還宣佈，將通過推出七款新產品來擴展其 100V 射頻氮化鎵產品群組，這些產品通過單個晶體管實現高達 5 kW 的功率水準，適用於航空電子、定向能源、電子戰、雷達和科學市場領域。

高頻氮化鎵市場趨勢

5G落地進展帶動通訊基礎設施領域強勁需求

  • 電訊業是全球數位化的主要推動者，也是市場環境正在全面變化的產業，被認為是數位轉型技術的主要用戶。電訊業對互通性和技術的投資促進了全球經濟中資本和資訊流動的模式轉移，並為跨產業全新經營模式的出現奠定了基礎。
  • 5G技術預計將徹底改變各種寬頻服務領域，並實現各個最終用戶產業的連接。推動 GaN市場佔有率的主要因素是行動訂閱量、線上視訊內容串流、5G 基礎設施以及使用 5G 的各種物聯網應用的增加。 5G預計將支援跨多種場景的多種業務和相關業務需求。
  • 目前，5G行動用戶數為42萬，預計到2022年將達4億人。隨著全球5G技術部署的大幅增加，對RF GaN技術的需求預計將增加。
  • 2022年5月，義法半導體（ST）和通訊、工業、國防和資料中心產業的半導體產品供應商MACOM Technology Solutions Holdings（MACOM）宣布推出射頻矽基氮化鎵（RF GaN-on-Si） Si ). 生產已宣布。原型。憑藉這一成功，ST和MACOM將繼續合作並擴大雙方的關係。 ST 和 MACOM 正在開發的 GaN-on-Si 技術預計在整合到標準半導體製程流程時將提供具有競爭力的性能和顯著的規模經濟。
  • Qorvo 是 2G、3G 和 4G 基站製造商的 RF 解決方案供應商之一。 它在支援sub-6 GHz和cmWave/mmWave無線基礎設施的開發方面具有獨特的市場地位。 Qorvo 一直通過投資覆蓋相關 5G 頻段（如 3.5、4.8、28 和 39GHz）的產品解決方案來服務市場，主要是為了讓 5G 成為現實。
  • 5G 基礎設施需要密集且小型的天線陣列，這給射頻 (RF) 系統功率和熱管理帶來了重大課題。 GaN 裝置具有改進的寬頻性能、效率和功率密度，為解決這些課題提供了更緊湊的解決方案的潛力。

亞太地區預計將出現顯著成長

  • 亞太離散半導體產業以中國、日本、台灣和韓國為主導，約佔全球離散半導體市場的65%。相較之下，越南、泰國、馬來西亞和新加坡等國家則在該地區佔據市場主導地位。
  • 印度電子與半導體協會預計，到2025年，印度半導體元件市場規模預計將達到323.5億美元，複合年成長率為10.1%（2018-2025年）。該國是全球研發中心的重要目的地。因此，印度政府正在進行的「印度製造」計畫預計將為半導體市場帶來大量投資。印度政府的此類措施將利用 RF GaN 市場。
  • 2022年2月，氮化鎵積體電路（IC）供應商納微半導體宣布參加中國國際金融公司（CICC）投資者大會。該公司專有的 GaN 功率 IC 將 GaN 功率和 GaN 驅動、控制和保護整合在單一 SMT 封裝中。這種參與將利用該地區的 GaN 市場。
  • 投資者對開發支援 5G 技術的基礎設施的興趣增加，預計將增加全部區域對 RF GaN 的需求。例如，根據GSMA的數據，到2025年，亞太地區的行動電話電信商預計將花費超過4,000億美元，其中3,310億美元將用於5G部署。
  • 中國射頻氮化鎵公司的成長是該國從製造業經濟轉型為創新主導經濟的更廣泛趨勢的一部分。中國市場對商業無線通訊應用的需求正在迅速成長，中國企業已經在開發下一代通訊網路。
  • 此外，2021年12月，印度坎普爾理工學院的研究人員開發了鋁氮化鎵（AlGaN）高電子移動性電晶體（HEMT）的高效能產業標準模型。該模型提供了一種簡單的設計方法，可用於製造高功率射頻電路。射頻電路包括用於無線電傳輸的放大器和開關，可用於航太和國防應用。研究人員的持續創新將推動該地區 RF GaN 市場的成長。

高頻氮化鎵產業概況

射頻氮化鎵市場參與者之間的競爭非常激烈，特別是由於雷神技術公司、意法半導體微電子等幾家主要公司的存在。 不斷創新產品的能力使其獲得了優於其他參與者的競爭優勢。 這些公司已經能夠通過研發、戰略合作夥伴關係和併購在市場上站穩腳跟。

2022 年 6 月，Qorvo 被美國國防部 （DoD） 選中，為全球提供創新 RF 解決方案的傑出供應商，以推動該國尖端技術的先進集成互連和製造增長 （SOTA）。 射頻氮化鎵計劃，也稱為 STARRY NITE，是國防部研究與工程部副部長 （OUSD R&E） 微電子路線圖的一部分。 該計劃旨在與國防部的先進封裝生態系統合作，開發和完善該國的開放式SOTA射頻氮化鎵代工廠。

2022 年 5 月，義法半導體與工業、通訊、國防和資料中心產業半導體產品領先供應商 MACOM Technology Solutions Holdings Inc. 宣布推出 RF Gan-on-Si (RF Gan-on-Si) 原型宣布製作成功。憑藉這項成就，ST和MACOM將繼續合作並加強雙方的關係。

其他福利

  • Excel 格式的市場預測 (ME) 表
  • 3 個月分析師支持

目錄

第1章簡介

  • 研究假設和市場定義
  • 調查範圍

第2章調查方法

第3章執行摘要

第4章市場洞察

  • 市場概況
  • 產業價值鏈分析
  • 產業吸引力－波特五力分析
    • 新進入者的威脅
    • 買方議價能力
    • 供應商的議價能力
    • 替代產品的威脅
    • 競爭公司之間的敵意強度
  • 技術簡介
  • 評估 COVID-19感染疾病對產業的影響

第5章市場動態

  • 市場促進因素
    • 5G落地進展帶動通訊基礎設施領域強勁需求
    • 高性能和小尺寸等有利特性
  • 市場限制因素
    • 成本和營運課題

第6章市場區隔

  • 依用途
    • 軍隊
    • 通訊基礎設施（回程傳輸、RRH、大規模 MIMO、小型基地台）
    • 衛星通訊
    • 有線寬頻
    • 商業雷達和航空電子設備
    • 射頻能量
  • 依材料類型
    • GaN-on-Si
    • GaN-on-SiC
    • 其他材料類型（GaN-on-GaN、GaN-on-Diamond）
  • 依地區
    • 北美洲
    • 歐洲
    • 亞太地區
    • 中東和非洲

第7章 競爭形勢

  • 公司簡介
    • Aethercomm Inc.
    • Analog Devices Inc.
    • Wolfspeed Inc.（Cree Inc.）
    • Integra Technologies Inc.
    • MACOM Technology Solutions Holdings Inc.
    • Microsemi Corporation（Microchip Technology Incorporated）
    • Mitsubishi Electric Corporation
    • NXP Semiconductors NV
    • Qorvo Inc.
    • STMicroelectronics NV
    • Sumitomo Electric Device Innovations Inc.
    • HRL Laboratories
    • Raytheon Technologies
    • Mercury Systems, Inc

第8章投資分析

第9章市場機會與未來趨勢

簡介目錄
Product Code: 63835

The RF GaN Market size is estimated at USD 1.7 billion in 2024, and is expected to reach USD 4.03 billion by 2029, growing at a CAGR of 18.76% during the forecast period (2024-2029).

RF GaN - Market

Due to the benefits of RF GaN usage across a wide range of real-time linked devices and applications, more industries are expected to use the Internet of Things (IoT) technology, which is expected to drive market growth. With the continuously evolving GaN technology, GaN enables higher frequencies in more complex applications, such as phased arrays, radar, and base transceiver stations for cable TV (CATV), very small aperture terminal (VSAT), and defense communications.

Key Highlights

  • RF GaN plays a key role in wireless infrastructure, improving efficiency and expanding bandwidth to support ever-increasing data transmission speeds. The market for RF GaN is primarily driven by increasing 5G adoption and advances in wireless communications. Telecom operators could also benefit from increased use of GaN power transistors.
  • The increasing adoption of RF GaN in electric automotive is also one of the major factors driving demand in this market. Silicon carbide devices are used in the onboard battery chargers of electric buses, taxis, lorries, and passenger cars. Further, increasing government laws favoring the electric vehicles market stimulates demand in the RF GaN market.
  • The infrastructure needed to create autonomous vehicles and drones is another factor that increases demand for RF GaN technologies. Hence, growth in the adoption and development of autonomous vehicles and drones for various applications, especially military and defense, is expected to increase further the adoption of RF GaN devices over the forecast period.
  • The inherent material advantages of GaN come with some associated manufacturing challenges that include the cost and optimization of device processing and packaging. Other issues include charge trapping and current collapse, which need to be resolved for increased adoption of these devices. Although significant improvements have been made in RF GaN-based devices (performance and yields), there are still some barriers preventing the gallium nitride on silicon carbide (GaN-on-SiC) from entering mainstream applications (i.e., in wireless telecom base-stations or CATV).
  • The COVID-19 pandemic impacted supply lines and the telecoms industry. It considerably hindered the penetration of 5G in the telecommunications sector. In this critical situation, consumers are expected to continue using mobile phones, but most of them may not be able to invest more in a technology that is still in a nascent stage.
  • Rapidly increasing data consumption has resulted in the growth of commercial networks and is encouraging network providers to adopt next-generation networks, such as 4G and 5G. According to the Cisco Visual Networking Index, global mobile data traffic is expected to register a CAGR of 46%, reaching 77.5 exabytes per month by 2022.
  • Organizations across the world are innovating new products and expanding their business. For instance, in June 2022, Integra, a provider of innovative RF and microwave power solutions, announced that it had begun shipping its breakthrough 100V RF GaN technology to customers in the United States and Europe. The company also announced the expansion of its 100V RF GaN product portfolio with the launch of seven new products for the avionics, directed energy, electronic warfare, radar, and scientific market segments, delivering power levels of up to 5kW in a single transistor.

Radiofrequency Gallium Nitride Market Trends

Strong Demand from Telecom Infrastructure Segment Driven by Advancements in 5G Implementation

  • As a primary driver of global digitization and an industry undergoing comprehensive changes in the market environment, the telecommunications industry is regarded as a major user of digital transformation technologies. The telecommunications industry's investment in interoperability and technology has facilitated a paradigm shift in the flow of capital and information throughout the global economy, providing the building blocks for the emergence of entirely new business models across the industry.
  • The 5G technology is expected to revolutionize the domain of various broadband services and empower connectivity across different end-user verticals. The major factors boosting the market share of GaN are increasing mobile subscriptions, streaming of online video content, 5G infrastructure, and various IoT applications using 5G. 5G is anticipated to support different services and associated service requirements across multiple scenarios.
  • Currently, the number of 5G mobile subscriptions is valued at 0.42 million, and it is expected to reach 400 million subscriptions by 2022. With the substantial growth in the rollouts of 5G technology globally, the demand for RF GaN technology is expected to increase.
  • In May 2022, STMicroelectronics (ST) and MACOM Technology Solutions Holdings (MACOM), a supplier of semiconductor products for the telecommunications, industrial, defense, and data center industries, announced the production of RF GaN on silicon (RF Gan-on-Si) prototypes. With this success, ST and MACOM will continue to work together and expand their relationship. GaN-on-Si technology under development by ST and MACOM is anticipated to offer competitive performance and significant economies of scale enabled by integration into standard semiconductor process flows.
  • Qorvo is one of the suppliers of RF solutions to the 2G, 3G, and 4G base station manufacturers. It is uniquely positioned in the market to support the development of sub-6 GHz and cmWave/mmWave wireless infrastructure. Qorvo has been investing in product solutions covering relevant 5G bands, such as 3.5, 4.8 and 28, and 39GHz, to service the market, mainly to enable 5G.
  • The need for dense, small-scale antenna arrays in 5G infrastructure results in key challenges with power and thermal management in radio frequency (RF) systems. With their improved wideband performance, efficiency, and power density, GaN devices offer the potential for more compact solutions that can address these challenges.

Asia-Pacific is Expected to Experience Significant Growth

  • The Asia-Pacific region's discrete semiconductor industry is driven by China, Japan, Taiwan, and South Korea, constituting around 65% of the global discrete semiconductor market. In contrast, others, like Vietnam, Thailand, Malaysia, and Singapore, contribute to the region's dominance in the market.
  • According to the Electronics and Semiconductors Association of India,the Indian market for semiconductor components would register a 10.1% CAGR (2018-2025) to reach USD 32.35 billion by 2025. The country is a vital destination for global research and development centers. Therefore, the ongoing 'Make in India' initiative by the Government of India is expected to result in significant investment in the semiconductor market. Such initiatives by the government of India will leverage the RF GaN market.
  • In February 2022, Navitas Semiconductor, a provider of GaN integrated circuits (ICs), announced its participation in the China International Capital Corporation Limited (CICC) Investor Conference. The company's proprietary GaN power IC integrates GaN power and GaN drive, control, and protection in a single SMT package. Such participation will leverage the GaN market in the region.
  • Demand for RF GaN across the APAC region is expected to increase due to growing investor interest in developing infrastructure to support 5G technology. For instance, according to the GSMA, the Asia-Pacific mobile operator is expected to spend more than USD 400 billion by 2025, of which USD 331 billion will be expended on 5G deployments.
  • The growth of RF GaN companies in China is part of a broader trend as the nation shifts from a manufacturing- to an innovation-driven economy. The Chinese market is witnessing an exploding demand for commercial wireless telecom applications, and Chinese companies are already developing next-gen telecom networks.
  • Moreover, in December 2021, researchers from IIT Kanpur in India developed a high-performance, industry-standard model of aluminum GaN (AlGaN) high electron mobility transistor (HEMT). This model provides a simple design method that can be used to manufacture high-power RF circuits. RF circuits include amplifiers and switches used in wireless transmissions and are useful in aerospace and defense applications. Constant innovations by researchers will drive the market growth of RF GaN in the region.

Radiofrequency Gallium Nitride Industry Overview

The competitive rivalry among the players in the RF GaN market is high owing to the presence of some key players such as Raytheon Technologies, STM microelectronics, amongst others. Their ability to continually innovate their offerings has allowed them to gain a competitive advantage over other players. Through research and development, strategic partnerships, and mergers and acquisitions, these players have been able to gain a strong foothold in the market.

In June 2022, Qorvo, a prominent provider of innovative RF solutions that connect the world, was selected by the US Department of Defense (DoD) to proceed with the Advanced Integration Interconnection and Fabrication Growth for Domestic State-of-the-Art (SOTA) RF GaN program, also known as STARRY NITE, as part of the Office of Undersecretary of Defense Research & Engineering's (OUSD R&E) microelectronics roadmap. The program seeks to develop and mature domestic, open SOTA RF GaN foundries in alignment with the DoD's advanced packaging ecosystem.

In May 2022, STMicroelectronics and MACOM Technology Solutions Holdings Inc., a significant supplier of semiconductor products for the industrial, telecommunications, defense, and data center industries, announced the successful production of RF Gan on Silicon (RF Gan-on-Si) prototypes. With this achievement, ST and MACOM would continue to work together and enhance their relationship.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

  • 4.1 Market Overview
  • 4.2 Industry Value Chain Analysis
  • 4.3 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.3.1 Threat of New Entrants
    • 4.3.2 Bargaining Power of Buyers
    • 4.3.3 Bargaining Power of Suppliers
    • 4.3.4 Threat of Substitute Products
    • 4.3.5 Intensity of Competitive Rivalry
  • 4.4 Technology Snapshot
  • 4.5 Assessment of the Impact of COVID-19 on the Industry

5 MARKET DYNAMICS

  • 5.1 Market Drivers
    • 5.1.1 Strong Demand from Telecom Infrastructure Segment Driven by Advancements in 5G Implementation
    • 5.1.2 Favorable Attributes Such As High-performance and Small Form Factor to
  • 5.2 Market Restraints
    • 5.2.1 Cost & Operational Challenges

6 MARKET SEGMENTATION

  • 6.1 By Application
    • 6.1.1 Military
    • 6.1.2 Telecom Infrastructure (Backhaul, RRH, Massive MIMO, Small Cells)
    • 6.1.3 Satellite Communication
    • 6.1.4 Wired Broadband
    • 6.1.5 Commercial Radar and Avionics
    • 6.1.6 RF Energy
  • 6.2 By Material Type
    • 6.2.1 GaN-on-Si
    • 6.2.2 GaN-on-SiC
    • 6.2.3 Other Material Types (GaN-on-GaN, GaN-on-Diamond)
  • 6.3 Geography
    • 6.3.1 North America
    • 6.3.2 Europe
    • 6.3.3 Asia Pacific
    • 6.3.4 Middle East and Africa

7 COMPETITIVE LANDSCAPE

  • 7.1 Company Profiles
    • 7.1.1 Aethercomm Inc.
    • 7.1.2 Analog Devices Inc.
    • 7.1.3 Wolfspeed Inc. (Cree Inc.)
    • 7.1.4 Integra Technologies Inc.
    • 7.1.5 MACOM Technology Solutions Holdings Inc.
    • 7.1.6 Microsemi Corporation (Microchip Technology Incorporated)
    • 7.1.7 Mitsubishi Electric Corporation
    • 7.1.8 NXP Semiconductors NV
    • 7.1.9 Qorvo Inc.
    • 7.1.10 STMicroelectronics NV
    • 7.1.11 Sumitomo Electric Device Innovations Inc.
    • 7.1.12 HRL Laboratories
    • 7.1.13 Raytheon Technologies
    • 7.1.14 Mercury Systems, Inc

8 INVESTMENT ANALYSIS

9 MARKET OPPORTUNITIES AND FUTURE TRENDS