2024 年至 2031 年氮化鎵半導體裝置市場（按地區）

氮化鎵半導體裝置市場評估，2024-2031

氮化鎵半導體裝置市場正在快速成長。與傳統的矽基元件相比，GaN元件具有更優異的性能。 GaN 具有多種優勢，包括提高效率、加快開關速度和增強功率處理能力。這些特性使其適用於廣泛的應用，包括電力電子、射頻（RF）設備和下一代電動車。預計2024年市場規模將超過232.4億美元，2031年將達到約345.9億美元。

5G 網路的推出、電氣化程度的提高以及航空航天和國防領域的改進等趨勢正在推動對 GaN 裝置的需求。隨著 GaN 技術的發展和製造技術變得更具成本效益，預計未來幾年該市場將進一步成長。由於對具有成本效益和效率的氮化鎵半導體裝置的需求不斷增加，預計 2024 年至 2031 年期間市場複合年增長率為 5.10%。

氮化鎵半導體裝置市場：定義/概述

氮化鎵（GaN）半導體元件是用GaN材料製成的先進電子元件，GaN是一種具有高電子遷移率和飽和速度的直接帶隙半導體。 GaN元件包括電力電子和光電子中使用的電晶體、二極體和LED。這些設備在幾個重要方面優於典型的矽基半導體，包括卓越的功率效率、熱導率以及在更高溫度和頻率下運作的能力。

GaN半導體裝置由於其優異的性能特性，被廣泛應用於各個行業。在通訊產業，它們對於 5G 網路中的射頻放大器等高頻應用至關重要。在電力電子領域，GaN電晶體和二極體用於電源、逆變器和電動車（EV）充電系統，可顯著節省能源並減小電源模組的尺寸和重量。光電子產業正在受益於用於照明、顯示器和資料儲存的基於 GaN 的 LED 和雷射二極體。

GaN半導體裝置的成長預測是樂觀的，隨著其不斷進步和在各行業的應用日益廣泛。隨著對更好經濟性和性能的需求不斷增加，預計 GaN 裝置將在電動車、再生能源發電系統和下一代無線通訊（6GY 及以後）的發展中發揮關鍵作用。 GaN技術的創新預計將實現更小、更快、更節能的電子產品。

對高性能電子產品的需求會推動氮化鎵半導體裝置市場的發展嗎？

對高性能電子產品的需求可能會推動氮化鎵（GaN）半導體裝置市場的擴張。 GaN與傳統的矽基元件相比具有顯著的優勢，包括效率更高、開關速度更快、功率處理能力更強。這些特性使 GaN 成為電力電子、射頻放大器和 LED 照明等各種應用的理想選擇。隨著各行各業尋求更有效率、更小的解決方案，GaN技術越來越被視為可行的選擇，從而帶來全球採用和市場擴張。

GaN技術的不斷發展使其更具吸引力。研究和開發工作促進了 GaN 材料特性、裝置設計和製造過程的增強。這不僅提高了性能，而且降低了價格，使得 GaN 設備更加實惠。

優於矽的性能 GaN 裝置比標準的矽基半導體具有多種優勢。它提供了更高的效率、更快的切換速度和增強的功率處理能力。結果是，各種應用的性能都提高了提高，包括電力電子、射頻設備甚至下一代電動車。

塊狀氮化鎵（GAN）的高成本是否會影響氮化鎵半導體裝置市場的成長？

塊狀氮化鎵（GaN）的高成本可能會影響GaN半導體裝置市場的成長。儘管 GaN 具有提高效率和功率處理能力等性能優勢，但其初始成本是超越傳統矽基元件的一道障礙。這個成本因素可能會減緩大規模採用，特別是在價格敏感的產業和成本效益是關鍵的應用領域。

然而，目前旨在降低製造成本和提高製造效率的研究和開發活動可能會隨著時間的推移減輕這一障礙並促進 GaN 技術得到更廣泛的市場接受。

有限的規模經濟可能會影響氮化鎵（GaN）半導體裝置市場的成長。 GaN技術，尤其是塊體技術，在實現與矽等更成熟的半導體材料相當的規模經濟方面面臨障礙。這種限制將導致更高的生產成本，進而影響價格競爭力和技術在各種應用領域的傳播。提高生產能力和改進製造流程的努力對於克服這一障礙並推動 GaN 半導體裝置市場的成長軌跡至關重要。

目錄

第 1 章簡介

• 市場定義
• 市場區隔
• 研究方法

第 2 章執行摘要

• 主要發現 市場概況 市集亮點

第3章 市場概覽

• 市場規模與成長潛力
• 市場趨勢
• 市場推動因素
• 市場限制
• 市場機會
• 波特五力分析

第 4 章 氮化鎵半導體元件市場（依元件類型）

• GaN功率半導體
• GaN 射頻 (RF) 裝置
• GaN光電器件

第5章 氮化鎵半導體裝置市場（依應用）

• 電源
• 射頻設備
• 汽車
• 消費性電子產品
• 通訊設備
• 工業設備 航空航太和國防
• 醫療保健

第6章 氮化鎵半導體裝置市場（依最終用途產業劃分）

• 溝通
• 汽車
• 家用電器 航空航太和國防
• 工業
• 醫療保健

第 7 章 區域分析

• 北美洲
• 美國
• 加拿大
• 墨西哥
• 歐洲
• 英國
• 德國
• 法國
• 義大利 亞太地區
• 中國
• 日本
• 印度
• 澳大利亞
• 拉丁美洲
• 巴西
• 阿根廷
• 智利
• 中東和非洲
• 南非
• 沙烏地阿拉伯
• 阿拉伯聯合大公國

第 8 章 市場動態

• 市場推動因素
• 市場限制
• 市場機會
• COVID-19 市場影響

第 9 章 競爭格局

• 大型公司
• 市佔率分析

第10章 公司簡介

• Wolfspeed, Inc.（US）
• Qorvo, Inc.（US）
• MACOM Technology Solutions Holdings, Inc.（US）
• Infineon Technologies AG（Germany）
• Sumitomo Electric Industries, Ltd.（Japan）
• Navitas Semiconductor（US）
• Mitsubishi Electric（Japan）
• Epistar Corporation（Taiwan）
• Cree, Inc.（US）（acquired by Wolfspeed in 2021）
• Transphorm, Inc.（US）
• Efficient Power Conversion Corporation（EPC）（US）
• GaN Systems Inc.（US）
• Nichia Corporation（Japan）
• Texas Instruments Incorporated（US）
• Microchip Technology Incorporated（US）
• Panasonic Corporation（Japan）
• Analog Devices, Inc.（US）
• Visic Technologies, Inc.（US）
• Integra Technologies, Inc.（US）
• Exagan, Inc.（US）

第 11 章 市場展望與機會

• 新興技術
• 未來市場趨勢
• 投資機會

第 12 章附錄

• 縮寫列表
• 來源與參考文獻

Gallium Nitride Semiconductor Device Market Valuation - 2024-2031

The market for gallium nitride semiconductor devices is growing rapidly. The GaN devices' higher performance when compared to classic silicon-based ones. GaN has several advantages, including increased efficiency, faster switching speeds, and improved power handling capabilities. These characteristics make them suitable for a wide range of applications, including power electronics, radio frequency (RF) devices, and future generations of electric vehicles. The market size surpass USD 23.24 Billion valued in 2024 to reach a valuation of aroundUSD 34.59 Billion by 2031.

Trends like as the deployment of 5G networks, increased electrification, and improvements in the aerospace and defense sectors are driving a significant demand for GaN devices. As GaN technology evolves and manufacturing techniques become more cost-effective, we may expect this market to grow more in the next years. The rising demand for cost-effective and efficient gallium nitride semiconductor device is enabling the market to grow at aCAGR of 5.10% from 2024 to 2031.

Gallium Nitride Semiconductor Device Market: Definition/ Overview

Gallium Nitride (GaN) semiconductor devices are advanced electronic components constructed from the GaN material, a direct bandgap semiconductor with high electron mobility and saturation velocity. GaN devices include transistors, diodes, and LEDs, which are utilized in power electronics and optoelectronics. These devices exceed typical silicon-based semiconductors in several important ways, including great power efficiency, thermal conductivity, and the ability to function at higher temperatures and frequencies.

GaN semiconductor devices are widely used in a variety of industries due to their outstanding performance characteristics. In the telecommunications industry, they are critical for high-frequency applications like RF amplifiers in 5G networks. In power electronics, GaN transistors and diodes are used in power supplies, inverters, and electric vehicle (EV) charging systems, resulting in significant energy savings and smaller, lighter power modules. The optoelectronics industry benefits from GaN-based LEDs and laser diodes, which are utilized in lighting, displays, and data storage.

The projected growth of GaN semiconductor devices looks optimistic, with continuing advances and increased adoption across a variety of industries. As the demand for greater economy and performance rises, GaN devices are projected to play an important part in the growth of electric vehicles, renewable energy systems, and next-generation wireless communications (6G and beyond). Innovations in GaN technology are projected to result in even smaller, quicker, and more energy-efficient electronics.

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Will Demand for High-Performance Electronics Drive the Gallium Nitride Semiconductor Device Market?

The desire for high-performance electronics is likely to fuel expansion in the Gallium Nitride (GaN) semiconductor device market. GaN has substantial advantages over traditional silicon-based devices, including an increase in efficiency, faster switching speeds, and improved power handling. These properties make GaN ideal for a variety of applications, including power electronics, RF amplifiers, and LED illumination. As industries seek more efficient and smaller solutions, GaN technology is increasingly viewed as a viable choice, resulting in global adoption and market expansion.

Advances in GaN technology continuous developments in GaN technology make it more appealing. Research and development are resulting in enhanced GaN material properties, device design, and production processes. This not only improves performance but also lowers prices, making GaN devices more affordable.

Superior performance over silicon GaN devices has several advantages over standard silicon-based semiconductors. They have increased efficiency, faster switching rates, and better power-handling capacity. This results in improved performance in a variety of applications, including power electronics, RF devices, and even future generations of electric vehicles.

Will the High Cost of Bulk Gallium Nitride (GAN) Impact the Growth of the Gallium Nitride Semiconductor Device Market?

The high cost of bulk gallium nitride (GaN) could have an impact on the growth of the GaN semiconductor device market. While GaN provides improved performance benefits, such as increase in efficiency and power handling capabilities, its initial cost remains a barrier to traditional silicon-based devices. This cost aspect may slow down general adoption, particularly in price-sensitive industries and applications where cost-effectiveness is critical.

However, current research and development activities are aimed at lowering production costs and improving manufacturing efficiencies, which may alleviate this obstacle over time and drive broader market acceptance of GaN technology.

The limited economies of scale could have an impact on the growth of the Gallium Nitride (GaN) semiconductor device market. GaN technology, particularly in bulk form, presents hurdles in obtaining economies of scale comparable to more established semiconductor materials such as silicon. This constraint might result in higher production costs, affecting pricing competitiveness and widespread adoption across a variety of applications. Efforts to increase production capacity and improve manufacturing processes are critical to overcoming this obstacle and boosting the growth trajectory of the GaN semiconductor device market.

Category-Wise Acumens

How High-Power Density Accelerates the GaN Power Semiconductors for the Gallium Nitride Semiconductor Device Market?

The GaN power semiconductor category dominates the gallium nitride semiconductor device market. The market adoption of GaN power semiconductors is largely driven by their high-power density. GaN devices have higher power density than traditional silicon-based competitors, enabling smaller, lighter, and more efficient power electronics solutions. This advantage is especially useful in applications like electric vehicles, renewable energy systems, and telecommunications infrastructure, where reducing size and weight while boosting efficiency is crucial. As industries prioritize small and energy-efficient solutions, GaN semiconductors' inherent high power density makes them well-suited for significant expansion in these applications.

Superior efficiency is a primary driver of the Gallium Nitride (GaN) semiconductor device market. GaN devices are more efficient than typical silicon-based semiconductors, especially in power electronics and RF applications. This efficiency advantage translates into lower energy consumption, lower operating costs, and improved performance, making GaN an appealing option for enterprises seeking energy efficiency and sustainability. As demand for more efficient electronics rises across multiple industries, GaN's exceptional efficiency prepares it for significant market expansion.

The GaN Radio Frequency (RF) Device category is growing the quickest in the Gallium Nitride Semiconductor Device Market. This rapid increase is being driven by the introduction of next-generation wireless technology and advances in numerous RF applications.

Will Solar Inverters Power Supplies Segment Propel for the Gallium Nitride Semiconductor Device Market?

The gallium nitride semiconductor device market is currently led by the power supplies segment. This dominance is primarily driven by the growing demand for efficient power conversion across a variety of industries. Solar inverters are a significant market segment pushing the usage of Gallium Nitride (GaN) semiconductor devices.

GaN's ability to handle high frequencies and voltages more efficiently makes it ideal for usage in power supplies in solar inverters. These inverters require strong, high-performance components to convert DC electricity from solar panels into AC power for use in electrical networks or on-site consumption. GaN devices have benefits such as increased power density, smaller size and weight, and enhanced reliability, making them increasingly popular in the solar energy industry for improving overall system efficiency and performance.

Telecommunications is the fastest growing segment in the gallium nitride semiconductor device market. This spike is being driven by the adoption of next-generation wireless technologies and the growing need for greater data transfer speeds. The global deployment of 5G networks demands high-performance radio frequency (RF) components for base stations and user equipment. GaN technology is ideal for this application because of its high frequency and power handling capabilities.

Country/Region-wise Acumens

Will Government Support in the Asian Pacific Region Lead the Gallium Nitride Semiconductor Device Market?

The Asia-Pacific region currently dominates the gallium nitride semiconductor device market. Government support in Asia-Pacific is projected to fuel expansion in the Gallium Nitride (GaN) semiconductor device market. Many Asian countries, including Japan, South Korea, and China, have efforts and policies in place to promote semiconductor manufacturing and drive technological innovation.

These initiatives include sponsoring research and development, offering incentives to semiconductor companies, and encouraging the use of advanced technologies such as GaN for applications ranging from power electronics to telecommunications. Such support helps to strengthen infrastructure, lower production costs, and expedite market adoption, all of which contribute to the overall growth of the GaN semiconductor device market in the region and beyond.

The growing demand for consumer electronics in Asia-Pacific is likely to propel the Gallium Nitride (GaN) semiconductor device market. As consumer electronics makers strive to meet rising demand for smaller, more efficient, and high-performance products, GaN technology provides substantial benefits. GaN semiconductors enable the creation of tiny power adapters, fast-charging solutions, and high-frequency RF components, which are consistent with the trend toward portable, energy-efficient devices. The growing consumer electronics market in Asia-Pacific, fueled by rising disposable incomes and technical improvements, creates a good environment for GaN semiconductor adoption and market expansion.

Will Early Adoption of New Technologies Drive the Gallium Nitride Semiconductor Device Market in North America?

North America is expected to be the most rapidly increasing area in the gallium nitride semiconductor device market. Early adoption of new technologies is projected to drive the North American region's gallium nitride (GaN) semiconductor device market. North America, noted for its strong innovation ecosystem and early adoption of breakthrough technologies, is well-positioned to capitalize on GaN's advantages in various applications, including power electronics, RF devices, and LED lighting. The region's industries, such as automotive, telecommunications, and aerospace, place a premium on performance, efficiency, and reliability, all of which GaN excels in. As North American enterprises seek competitive advantages and technological leadership, using GaN semiconductor devices is expected to accelerate, adding to regional market growth.

North America's powerful ecosystem of research institutions, technological businesses, and venture capital promotes rapid semiconductor innovation and development. GaN's outstanding performance in power electronics, RF applications, and LED lighting is consistent with the region's focus on efficiency, performance, and sustainability. As automotive, telecommunications, and renewable energy industries seek cutting-edge solutions, GaN usage is likely to increase, aided by continued breakthroughs and investments in revolutionary semiconductor technologies throughout North America.

Competitive Landscape

The gallium nitride semiconductor device market is a dynamic and competitive space, characterized by a diverse range of players vying for market share. These players are on the run for solidifying their presence through the adoption of strategic plans such as collaborations, mergers, acquisitions, and political support.

The organizations are focusing on innovating their product line to serve the vast population in diverse regions. Some of the prominent players operating in the gallium nitride semiconductor device market include:

• Wolfspeed, Inc.
• Qorvo, Inc.
• MACOM Technology Solutions Holdings, Inc.
• Infineon Technologies AG
• Sumitomo Electric Industries, Ltd.
• Navitas Semiconductor
• Mitsubishi Electric
• Epistar Corporation
• Cree, Inc.
• Transphorm, Inc.
• Efficient Power Conversion Corporation (EPC)
• GaN Systems, Inc.
• Nichia Corporation
• Texas Instruments Incorporated
• Microchip Technology Incorporated
• Panasonic Corporation
• Analog Devices, Inc.
• Visic Technologies, Inc.
• Integra Technologies, Inc.
• Exagan, Inc.

Latest Developments

• In April 2024, Transphorm, Inc., a GaN power semiconductor provider, and Weltrend Semiconductor Inc. launched two new GaN System-in-Packages (SiPs). The latest additions, the WT7162RHUG24C and WT7162RHUG24B, combine Weltrend's high-frequency multi-mode (QR/Valley Switching) Flyback PWM controller with Transphorm's 480 mQ and 150 mQ SuperGaN FETs, respectively. This partnership expands on Weltrend's flagship GaN SiP from last year, creating the first SiP product line based on Transphorm's SuperGaN technology.
• In March 2024, Efficient Power Conversion Corporation announced EPC2361, a revolutionary gallium nitride (GaN) field-effect transistor (FET) with the market's lowest on-resistance at 100V, 1mQ. This invention is expected to double power density when compared to EPC's previous generation products. The EPC2361 has an excellent typical RDS (on) of only 2mQ) and is placed in a thermally improved QFN packaging with an exposed top, taking up a small 3mm x 5mm footprint.
• In January 2024, Transphorm Inc. launched two new 650V SuperGaN devices, packaged in a 4-lead TO-247 package (TO-247-4L). The new FETs, TP65H035G4YS and TP65H050G4YS, have on-resistances of 35mΩ and 50mΩ, respectively. They include a Kelvin-source terminal, allowing for flexibility switching with low energy losses.
• In November 2023, Cambridge GaN Devices (CGD) teamed with Cambridge University Technical Services (CUTS) in the UK and Chicony Power Technology in Taiwan to offer high-power-density adapters and data center power solutions using GaN technology.

TABLE OF CONTENTS

1. Introduction

• Market Definition
• Market Segmentation
• Research Methodology

2. Executive Summary

• Key Findings
• Market Overview
• Market Highlights

3. Market Overview

• Market Size and Growth Potential
• Market Trends
• Market Drivers
• Market Restraints
• Market Opportunities
• Porter's Five Forces Analysis

4. Gallium Nitride Semiconductor Device Market, By Device Type

• GaN Power Semiconductors
• GaN Radio Frequency (RF) Devices
• GaN Optoelectronic Devices

5. Gallium Nitride Semiconductor Device Market, By Application

• Power Supplies
• RF Devices
• Automotive
• Consumer Electronics
• Telecommunications
• Industrial
• Aerospace and Defense
• Healthcare

6. Gallium Nitride Semiconductor Device Market, By End-Use Industry

• Telecommunications
• Automotive
• Consumer Electronics
• Aerospace and Defense
• Industrial
• Healthcare

7. Regional Analysis

• North America
• United States
• Canada
• Mexico
• Europe
• United Kingdom
• Germany
• France
• Italy
• Asia-Pacific
• China
• Japan
• India
• Australia
• Latin America
• Brazil
• Argentina
• Chile
• Middle East and Africa
• South Africa
• Saudi Arabia
• UAE

8. Market Dynamics

• Market Drivers
• Market Restraints
• Market Opportunities
• Impact of COVID-19 on the Market

9. Competitive Landscape

• Key Players
• Market Share Analysis

10. Company Profiles

• Wolfspeed, Inc. (US)
• Qorvo, Inc. (US)
• MACOM Technology Solutions Holdings, Inc. (US)
• Infineon Technologies AG (Germany)
• Sumitomo Electric Industries, Ltd. (Japan)
• Navitas Semiconductor (US)
• Mitsubishi Electric (Japan)
• Epistar Corporation (Taiwan)
• Cree, Inc. (US) (acquired by Wolfspeed in 2021)
• Transphorm, Inc. (US)
• Efficient Power Conversion Corporation (EPC) (US)
• GaN Systems Inc. (US)
• Nichia Corporation (Japan)
• Texas Instruments Incorporated (US)
• Microchip Technology Incorporated (US)
• Panasonic Corporation (Japan)
• Analog Devices, Inc. (US)
• Visic Technologies, Inc. (US)
• Integra Technologies, Inc. (US)
• Exagan, Inc. (US)

11. Market Outlook and Opportunities

• Emerging Technologies
• Future Market Trends
• Investment Opportunities

12. Appendix

• List of Abbreviations
• Sources and References