市場調查報告書
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1274370
GaN基板全球市場研究報告2023-2030 年行業分析、規模、份額、增長、趨勢和預測Global GaN Substrate Market Research Report - Industry Analysis, Size, Share, Growth, Trends and Forecast 2023 to 2030 |
全球對 GaN 襯底的需求預計將從 2022 年的 2.2712 億美元增長到 2030 年的 6.4697 億美元,在 2022-2030 年研究期間實現 13.98% 的複合年增長率。
氮化鎵 (GaN) 是一種用於高功率、高頻應用的半導體。 GaN 材料是在藍寶石、矽和碳化矽等其他材料上生長的薄層。 GaN 襯底是一種半導體材料,與硅、碳化矽、鋁和藍寶石等常見半導體材料相比具有明顯的優勢。 GaN 通過消除結構缺陷和提高垂直導熱性和導電性來提高器件性能。
更寬的帶隙、更高的擊穿電壓、更大的臨界電場和更好的導熱性是該行業從矽技術轉向 GaN 襯底並擴大其市場的一些關鍵特徵。 LED 製造中對 GaN 襯底的需求不斷增加以及 GaN 工業設備的接受度不斷提高正在推動市場擴張。 由於其高電子遷移率,GaN 襯底在電力電子領域的需求量很大。 這些 GaN 襯底應用有望加速 GaN 襯底市場的擴張,因為這些器件可降低傳導和開關損耗並提高電子系統的效率。 另一方面,高昂的封裝成本可能會阻礙 GaN 襯底市場的增長。
本報告解釋了波特的五力模型、市場吸引力分析和價值鏈分析。 這些工具可幫助您清楚地了解您的行業結構並評估您在全球範圍內的競爭吸引力。 此外,這些工具還能夠全面評估全球GaN襯底市場的各個細分市場。 GaN 襯底行業的發展和趨勢為這項研究提供了一種整體方法。
本部分按國家/地區分析細分市場,提供每個細分市場的詳細數據,並協助確定目標受眾和每種產品/服務的未來商機。
本節介紹了區域前景,重點關注北美、歐洲、亞太地區、拉丁美洲、中東和非洲 GaN 襯底市場當前和未來的需求。 此外,我們還關注所有主要地區各個應用領域的需求、估計和預測。
該研究報告還涵蓋了市場主要參與者的綜合概況和全球競爭格局的詳細視圖。 GaN 襯底市場的主要參與者是 Kyma Technologies Inc.、Kyocera Corporation、Mitsubishi Chemical Corporation、MTI Corporation、NGK Insulators Ltd.、Shin-Etsu Chemical Co., Ltd.、Shin-Etsu Chemical Co. Ltd.、SOITEC、Shin-Etsu Chemical Co., Ltd.、Sumitomo Chemical Co.、MTI CorporatiOn、Toyoda Gosei Co. Ltd., Ltd., Xiamen Weige Wang Advanced Materials Co., Ltd. 本節全面介紹了競爭格局,包括重大併購等各種戰略發展,未來能力、合作夥伴關係、財務概覽、合作、新產品開發和新產品發布。我在這裡。
如果您有定制要求,請聯繫我們。 我們的研究團隊可以根據您的需要提供定制報告。
注意:公司簡介中的財務細節和近期發展基於可用信息,可能不包括私營公司。
The global demand for GaN Substrate Market is presumed to reach the market size of nearly USD 646.97 MN by 2030 from USD 227.12 MN in 2022 with a CAGR of 13.98% under the study period of 2022 - 2030. Regarding volume, the market was calculated XX Million Units in 2022 and forecast to touch XX Million Units by 2030 with a CAGR of XX% during 2023-2030.
Gallium nitride (GaN) is a semiconductor employed in high-power, high-frequency uses. The GaN material is a thin layer produced on other materials such as sapphire, silicon, and silicon carbide. GaN Substrate is a semiconductor material with distinct benefits over other common semiconductor materials such as Silicon, Silicon Carbide, Aluminum, Sapphire, and others. GaN enhances the device's performance by removing structural flaws and improving vertical thermal and electrical conductivity.
Wider band gap, greater break-down voltage, larger critical electric field, and better thermal conductivity are some of the significant features for a sector to move from silicon technology to GaN substrate, expanding its market. Increased demand for GaN substrates in LED production, as well as increased acceptance of GaN industrial devices, are driving market expansion. Because of their high electron mobility, GaN Substrate is in high demand in the power electronics sector. As these devices aid in lowering conduction and switching losses and provide more efficiency in electronic systems, these GaN substrate applications are anticipated to accelerate the expansion of the GaN substrate market. On the contrary, high implementation costs are likely to hamper the growth of the GaN substrate market.
The report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of GaN substrate. The growth and trends of GaN Substrate Industry provide a holistic approach to this study.
This section of the GaN substrate market report provides detailed data on the segments by analyzing them at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
This section covers the regional outlook, which accentuates current and future demand for the GaN Substrate market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the GaN substrate market include Kyma Technologies Inc., Kyocera Corporation, Mitsubishi Chemical Corporation, MTI Corporation, NGK Insulators Ltd., Shin-Etsu Chemical Co. Ltd., SOITEC, Sumitomo Chemical Co. Ltd., Toyoda Gosei Co. Ltd., Xiamen Powerway Advanced Material Co. Ltd. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
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Note - in company profiling, financial details and recent development are subject to availability or might not be covered in case of private companies
Kindly note that the above listed are the basic tables and figures of the report and are not limited to the TOC.