市場調查報告書
商品編碼
1578265
全球絕緣柵雙極電晶體 (IGBT) 市場研究報告 - 2024 年至 2032 年行業分析、規模、佔有率、成長、趨勢和預測Global Insulated-Gate Bipolar Transistors (IGBTs) Market Research Report - Industry Analysis, Size, Share, Growth, Trends and Forecast 2024 to 2032 |
全球絕緣柵雙極電晶體(IGBT)市場需求預計將從2023年的183億美元達到2032年近454.7億美元的市場規模,2024-2032年研究期間的複合年成長率為10.64%。
絕緣柵雙極電晶體 (IGBT) 是一種結合了 MOSFET 和 BJT 特性的功率開關電晶體。它由由金屬氧化物半導體 (MOS) 閘極結構控制的四個交替層 (PNPN) 組成。它用於電源、馬達控制電路和電力電子應用,例如逆變器和轉換器。與其他電晶體裝置相比,使用 IGBT 的主要優點是其高電壓能力、低導通電阻、易於驅動以及相對較快的開關速度。它是中速和高壓應用的理想選擇,例如脈寬調製 (PWM)、變速控制、在數百千赫茲範圍內運行的變頻器應用以及開關模式電源或太陽能 DC-AC 逆變器。
預計全球絕緣柵雙極電晶體(IGBT)市場在預測期內將大幅成長。智慧家庭、智慧城市的興起、電動車需求的增加以及對高壓操作設備的需求預計將增加對絕緣柵雙極電晶體(IGBT)的需求。絕緣柵雙極電晶體 (IGBT) 因其卓越的特性而成為一種成功的裝置。高速開關速率、最佳化的功率損耗、高電壓下的易於控制(因為它可以實現更高的頻率和更高的效率)已導致 IGBT 在電網基礎設施中的部署增加。智慧電網正在取代舊的電網;這將為市場創造機會。然而,高溫下的漏電流阻礙了市場的成長。
研究報告涵蓋波特五力模型、市場吸引力分析和價值鏈分析。這些工具有助於清晰地了解行業結構並評估全球範圍內的競爭吸引力。此外,這些工具也對全球絕緣柵雙極電晶體(IGBT)市場的各個細分市場進行了包容性評估。絕緣柵雙極電晶體 (IGBT) 產業的成長和趨勢為本研究提供了整體方法。
絕緣柵雙極電晶體 (IGBT) 市場報告的這一部分提供了國家和地區級別細分市場的詳細資料,從而幫助策略師確定相應產品或服務的目標人群以及即將到來的機會。
本節涵蓋區域前景,重點介紹北美、歐洲、亞太地區、拉丁美洲以及中東和非洲絕緣柵雙極電晶體 (IGBT) 市場當前和未來的需求。此外,該報告重點關注所有主要地區各個應用領域的需求、估計和預測。
該研究報告還涵蓋了市場主要參與者的全面概況以及對全球競爭格局的深入了解。絕緣柵雙極電晶體(IGBT)市場的主要參與者包括英飛凌科技公司、三菱電機公司、恩智浦半導體、安森美半導體公司、瑞薩電子公司、德州儀器公司和東芝公司。本節包含競爭格局的整體視圖,包括各種策略發展,例如關鍵併購、未來產能、合作夥伴關係、財務概況、合作、新產品開發、新產品發布和其他發展。
如果您有任何客製化要求,請寫信給我們。我們的研究團隊可以根據您的需求提供客製化報告。
The global demand for Insulated-Gate Bipolar Transistors (IGBTs) Market is presumed to reach the market size of nearly USD 45.47 Billion by 2032 from USD 18.3 Billion in 2023 with a CAGR of 10.64% under the study period 2024-2032.
An insulated-gate bipolar transistor (IGBT) is a power switching transistor that combines the features of MOSFETs and BJTs. It consists of four alternating layers (P-N-P-N) controlled by a metal-oxide-semiconductor (MOS) gate structure. It is used in power supply, motor control circuits, and power electronics applications, such as inverters and converters. The main benefit of using the IGBT over other transistor devices is its high voltage capability, low ON-resistance, ease of drive, and relatively fast switching speeds. It's a good choice for moderate speed and high voltage applications such as pulse-width modulated (PWM), variable speed control, frequency converter applications operating in the hundreds of kilohertz range, and switch-mode power supplies or solar-powered DC-AC inverter.
The global insulated-gate bipolar transistors (IGBTs) market is forecasted to grow considerably during the forecast period. The rising trend of smart homes, smart cities, increasing demand for electric vehicles, and the need for high voltage operating devices are expected to swell demand for insulated-gate bipolar transistors (IGBTs). Insulated-gate bipolar transistors (IGBTs) have become a successful device due to their superior features. High-speed switching rate and optimized power loss, ease-of-control at high voltage, as it enables higher frequency with enhanced efficiency, has caused increased deployment of IGBTs into grid infrastructure. Smart grids are replacing old grid networks; this will create opportunities for the market. However, current leakage at high temperatures hampers the market growth.
The research report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of Insulated-Gate Bipolar Transistors (IGBTs). The growth and trends of Insulated-Gate Bipolar Transistors (IGBTs) industry provide a holistic approach to this study.
This section of the Insulated-Gate Bipolar Transistors (IGBTs) market report provides detailed data on the segments at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
This section covers the regional outlook, which accentuates current and future demand for the Insulated-Gate Bipolar Transistors (IGBTs) market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the Insulated-Gate Bipolar Transistors (IGBTs) market include Infineon Technologies AG, Mitsubishi Electric Corporation, NXP Semiconductors, ON Semiconductor Corporation, Renesas Electronics Corporation, Texas Instruments Incorporated, Toshiba Corporation. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
In case you have any custom requirements, do write to us. Our research team can offer a customized report as per your need.