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半導體生產設備電力設備化合物半導體

市場調查報告書

商品編碼

1678799

全球氮化鎵半導體市場 - 2025 至 2032 年

Global Gallium Nitride Semiconductor Market - 2025-2032

出版日期: 2025年03月11日 | 出版商:

DataM Intelligence | 英文 205 Pages | 商品交期: 最快1-2個工作天內

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簡介目錄

2024 年全球氮化鎵半導體市場規模達 8.322 億美元，預計到 2032 年將達到 31.666 億美元，2025 年至 2032 年的複合年成長率為 18.18%。

由於各行各業對高效能、高性能半導體解決方案的需求不斷增加，氮化鎵 (GaN) 半導體市場正在經歷強勁成長。汽車產業，尤其是電動車市場，是另一個重要的成長動力。 GaN功率裝置擴大用於電動車動力系統、車載充電器和逆變器，因為它們可以提高能源效率並縮短充電時間，這對電動車的性能至關重要。

例如，2023年的電動車銷量將比2022年高出350萬輛，較去年同期成長35%。這比五年前的 2018 年高出了六倍多。此外，再生能源領域正在利用 GaN 半導體來提高太陽能逆變器和風力發電系統的效率。基於GaN的逆變器可實現超過98%的電力轉換效率，從而降低能源損失和營運成本。

例如，Transphorm Inc. 開發了 GaN 電源模組，使太陽能發電系統能夠提供更高的能源產量，同時與傳統系統相比佔用的空間減少了 50%。隨著各國推動採用再生能源以實現淨零排放目標，該領域對 GaN 技術的需求預計將大幅上升。

受 5G 基礎設施部署、電動車生產擴大、航太和國防應用的進步、消費性電子產品創新以及向再生能源系統的過渡等因素的推動，氮化鎵 (GaN) 半導體市場有望持續成長。

動力學

投資激增推動市場

氮化鎵（GaN）半導體市場正在經歷強勁成長，主要得益於私營和公共部門投資的激增。與傳統的矽基半導體相比，GaN半導體具有更高的效率、更快的開關速度和更好的熱性能等優異的性能，因此越來越受到人們的關注。

例如，2025年，氮化鎵（GaN）功率元件領域的領先創新者Cambridge GaN Devices（CGD）成功完成3,200萬美元的C輪融資。這項投資由策略投資者領投，英國耐心資本 (British Patient Capital) 參與，並得到現有投資者 Parkwalk、BGF、劍橋創新資本 (CIC)、Foresight Group 和 IQ Capital 的支持。

此外，2023 年，GlobalFoundries 獲得美國政府 3,500 萬美元的聯邦資助，用於加速其位於佛蒙特州埃塞克斯交界處的工廠生產 GF 差異化矽基氮化鎵 (GaN) 半導體。這筆資金使 GF 更接近大規模生產 GaN 晶片，這種晶片具有處理高電壓和高溫的獨特能力。從電信、汽車、航太到消費性電子等各領域的投資激增，大大推動了 GaN 半導體市場的發展。

快速充電解決方案需求不斷成長

快速充電解決方案的需求不斷成長是氮化鎵 (GaN) 半導體市場的重要驅動力，因為與傳統的矽基充電器相比，基於 GaN 的充電器具有卓越的性能、效率和緊湊性。例如，隨著全球電動車市場的成長，對快速充電基礎設施的需求也在增加。基於 GaN 的充電器可以處理更高的功率位準（例如 350 kW 或更高）而不會過熱，使其成為高速電動車充電站的理想選擇。這正在加速GaN技術在汽車領域的應用。

此外，資料中心對更快、更有效率電源管理的需求也推動了 GaN 半導體的採用。這些設備能夠實現更高的功率密度和更快的開關速度，這對於管理雲端運算和巨量資料日益成長的能源需求至關重要。

此外，無線充電的便利性，加上 GaN 半導體的效率，正在推動消費性電子和汽車市場的需求。例如，基於 GaN 的無線充電器可提供高達 15W 的功率，從而縮短智慧型手機和耳機等裝置的充電時間。快速充電解決方案的需求不斷成長是 GaN 半導體市場的主要驅動力，因為 GaN 技術在效率、尺寸和性能方面具有顯著優勢。

投資成本高

氮化鎵（GaN）半導體的高生產成本限制了成本敏感型產業的採用，從而嚴重限制了市場成長。與傳統的矽（Si）半導體不同，GaN裝置需要昂貴的原料和複雜的製造程序，導致整體成本上升。

例如，每 2 吋 GaN 晶片的價格為 1,900 美元至 2,500 美元，而同等尺寸的矽晶片的價格為 25 美元至 50 美元。此外，5G基地台和衛星通訊等高功率應用首選的碳化矽上氮化鎵（GaN-on-SiC）晶圓價格更為昂貴，每片2吋晶圓成本高達3,000美元。

這種價格差異使得 GaN 技術在預算限制主導購買決策的產業中難以與矽競爭。由於原料昂貴、製造流程複雜以及基礎設施投資龐大，GaN半導體的生產成本高，成為市場成長的主要限制因素。

The Gallium Nitride (GaN) semiconductor market is experiencing robust growth due to the increasing demand for high-efficiency, high-performance semiconductor solutions across diverse industries. The automotive sector, especially the EV market, is another significant growth driver. GaN power devices are increasingly used in EV powertrains, onboard chargers, and inverters because they improve energy efficiency and reduce charging times, which are critical for EV performance.

For instance, electric car sales in 2023 were 3.5 million higher than in 2022, a 35% year-on-year increase. This is more than six times higher than in 2018, just 5 years earlier. Additionally, the renewable energy sector is leveraging GaN semiconductors to enhance the efficiency of solar inverters and wind power systems. GaN-based inverters can achieve power conversion efficiencies exceeding 98%, reducing energy losses and operational costs.

For instance, Transphorm Inc. has developed GaN power modules that enable solar power systems to deliver higher energy yields while occupying 50% less space compared to traditional systems. As countries push for renewable energy adoption to meet net-zero emission goals, the demand for GaN technology in this sector is expected to rise significantly.

The Gallium Nitride (GaN) semiconductor market is poised for sustained growth, driven by factors such as 5G infrastructure deployment, expanding EV production, advancements in aerospace and defense applications, consumer electronics innovation, and the transition to renewable energy systems.

Dynamics

Surging Investments Powering the Market

The Gallium Nitride (GaN) semiconductor market is experiencing robust growth, primarily driven by surging investments from both private and public sectors. GaN semiconductors are gaining traction due to their superior properties, such as higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon-based semiconductors.

For instance, in 2025, Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a US$ 32 million Series C funding round. The investment was led by a strategic investor with participation from British Patient Capital and supported by existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital.

Additionally, in 2023, GlobalFoundries, had been awarded US$ 35 million in federal funding from the U.S. government to accelerate the manufacturing of GF's differentiated gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. This funding brings GF closer to large-scale production of GaN chips, which are unique in their ability to handle high voltages and temperatures. The surge in investments across various sectors-ranging from telecommunications, automotive, and aerospace to consumer electronics-is significantly propelling the GaN semiconductor market.

Increasing Demand for Fast Charging Solutions

The increasing demand for fast charging solutions is a significant driver of the Gallium Nitride (GaN) Semiconductor Market, as GaN-based chargers offer superior performance, efficiency, and compactness compared to traditional silicon-based chargers. For instance, as the global EV market grows, the demand for fast-charging infrastructure is increasing. GaN-based chargers can handle higher power levels (e.g., 350 kW or more) without overheating, making them ideal for high-speed EV charging stations. This is accelerating the adoption of GaN technology in the automotive sector.

Additionally, the need for faster and more efficient power management in data centers is driving the adoption of GaN semiconductors. These devices enable higher power density and faster switching speeds, which are critical for managing the growing energy demands of cloud computing and big data.

Moreover, the convenience of wireless charging, combined with the efficiency of GaN semiconductors, is driving demand in the consumer electronics and automotive markets. For example, GaN-based wireless chargers can deliver up to 15W of power, enabling faster charging times for devices like smartphones and earbuds. The increasing demand for fast-charging solutions is a major driver of the GaN Semiconductor Market, as GaN technology offers significant advantages in terms of efficiency, size, and performance.

High Investment Costs

The high production costs associated with Gallium Nitride (GaN) semiconductors significantly restrain market growth by limiting adoption across cost-sensitive industries. Unlike traditional silicon (Si) semiconductors, GaN devices require expensive raw materials and complex manufacturing processes, leading to elevated overall costs.

For instance, the price of a GaN wafer ranges from US$ 1,900 to US$ 2,500 per 2-inch wafer, compared to US$ 25 to US$ 50 for a silicon wafer of the same size. Moreover, GaN-on-silicon carbide (GaN-on-SiC) wafers, preferred for high-power applications like 5G base stations and satellite communications, are even more expensive, costing up to US$ 3,000 per 2-inch wafer.

This price disparity makes it challenging for GaN technology to compete with silicon in industries where budget constraints dominate purchasing decisions. The high production costs of GaN semiconductors, driven by expensive raw materials, complex fabrication processes, and significant infrastructure investments, act as a major restraint on market growth.

Segment Analysis

The global Gallium Nitride Semiconductor market is segmented based on type, application, technology, end-user and region.

GaN Power Devices Leading the Charge in Gallium Nitride Semiconductor Market

The GaN power devices segment is a key driver of growth in the Gallium Nitride (GaN) semiconductor market, primarily due to the increasing demand for high-efficiency, high-power density solutions across various industries. GaN power devices, such as transistors, diodes, and integrated circuits (ICs), offer significant advantages over traditional silicon-based devices, including faster switching speeds, higher breakdown voltage, and improved thermal performance.

In the automotive sector, the rising adoption of electric vehicles (EVs) is a major factor driving demand for GaN power devices. Companies like Tesla and Lucid Motors are incorporating GaN-based onboard chargers and powertrains, which enable faster charging and greater energy efficiency, ultimately improving driving range. For instance, GaN Systems reported that their GaN transistors can reduce energy losses by up to 40% compared to silicon-based solutions, enhancing overall EV performance.

Additionally, GaN devices contribute to lighter and more compact vehicle designs, addressing the automotive industry's focus on energy efficiency and performance optimization. Thus, GaN power devices segment drives the Gallium Nitride semiconductor market by enabling high-performance, energy-efficient solutions across multiple industries.

Geographical Penetration

Strong Government Support and Strategies by the Companies in North America

The North America region dominates the Gallium Nitride (GaN) semiconductor market due to strong technological advancements, robust investments, and the presence of leading industry players. The region's dominance is further bolstered by widespread adoption of GaN technology across key industries such as automotive, aerospace and defense, telecommunications, renewable energy, and consumer electronics.

For instance, in 2024, Texas Instruments, stated that it has begun production of gallium nitride (GaN)-based power semiconductors at its factory in Aizu, Japan. Coupled with its existing GaN manufacturing in Dallas, Texas, TI will now internally manufacture four times more GaN-based power semiconductors, as Aizu ramps to production.

Additionally, in 2024, ROHM Co., Ltd. (ROHM), stated that ROHM and TSMC had entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications. The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices. Therefore, North America's dominance in the GaN semiconductor market is driven by its advanced defense applications, leadership in 5G deployment, growing EV ecosystem, consumer electronics demand, and a thriving R&D environment.

Competitive Landscape

The major global players in the market include Wolfspeed Inc, Infineon Technologies, Qorvo, MACOM Technology Solutions, Texas Instruments, NXP Semiconductors, GaN Systems, Efficient Power Conversion (EPC), Navitas, Semiconductor, STMicroelectronics and among others.

Key Developments

In 2024, Infineon Technologies AG, partnered with Canada-based AWL-Electricity Inc., a pioneer in MHz resonant capacitive coupling power transfer technology. Infineon provides AWL-E with CoolGaN GS61008P allowing the development of advanced wireless power solutions, enabling new ways to solve power challenges in various industries.
In 2024, Renesas Electronics Corporation, had completed the acquisition of Transphorm, Inc, a global leader in gallium nitride (GaN) as of June 20, 2024. With the closing of the acquisition now completed, Renesas will immediately start offering GaN-based power products and related reference designs to meet the rising demand for wide bandgap (WBG) semiconductor products.

By Type

GaN Power Devices
GaN RF Devices
GaN Optoelectronic Devices
GaN Substrates
Others

By Application

Power Electronics
RF Electronics
Optoelectronics
Others

By Technology

Enhancement-Mode GaN (eGaN)
Depletion-Mode GaN (dGaN)

By End-User

Consumer Electronics
Automotive
Telecommunications
Aerospace & Defense
Healthcare
Energy & Utilities
Others

By Region

North America
- US
- Canada
- Mexico
Europe
- Germany
- UK
- France
- Italy
- Spain
- Rest of Europe
South America
- Brazil
- Argentina
- Rest of South America
Asia-Pacific
- China
- India
- Japan
- Australia
- Rest of Asia-Pacific
Middle East and Africa

Why Purchase the Report?

To visualize the global gallium nitride semiconductor market segmentation based on type, application, technology, end-user and region.
Identify commercial opportunities by analyzing trends and co-development.
Excel data sheet with numerous data points at the gallium nitride semiconductor market level for all segments.
PDF report consists of a comprehensive analysis after exhaustive qualitative interviews and an in-depth study.
Product mapping available as excel consisting of key products of all the major players.

The global Gallium Nitride Semiconductor market report would provide approximately 70 tables, 61 figures and 205 pages.

Target Audience 2024

Manufacturers/ Buyers
Industry Investors/Investment Bankers
Research Professionals
Emerging Companies

1. Methodology and Scope

1.1. Research Methodology
1.2. Research Objective and Scope of the Report

2. Definition and Overview

3. Executive Summary

3.1. Snippet by Type
3.2. Snippet by Application
3.3. Snippet by Technology
3.4. Snippet by End-User
3.5. Snippet by Region

4. Dynamics

4.1. Impacting Factors
- 4.1.1. Drivers
  - 4.1.1.1. Surging Investments Powering the Market
  - 4.1.1.2. Increasing Demand for Fast Charging Solutions
- 4.1.2. Restraints
  - 4.1.2.1. High Investment Costs
- 4.1.3. Opportunity
- 4.1.4. Impact Analysis

5. Industry Analysis

5.1. Porter's Five Force Analysis
5.2. Supply Chain Analysis
5.3. Pricing Analysis
5.4. Regulatory Analysis
5.5. Sustainable Analysis
5.6. DMI Opinion

6. By Type

6.1. Introduction
- 6.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 6.1.2. Market Attractiveness Index, By Type
6.2. GaN Power Devices*
- 6.2.1. Introduction
- 6.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
6.3. GaN RF Devices
6.4. GaN Optoelectronic Devices
6.5. GaN Substrates
6.6. Others

7. By Application

7.1. Introduction
- 7.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 7.1.2. Market Attractiveness Index, By Application
7.2. Power Electronics*
- 7.2.1. Introduction
- 7.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
7.3. RF Electronics
7.4. Optoelectronics
7.5. Others

8. By Technology

8.1. Introduction
- 8.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 8.1.2. Market Attractiveness Index, By Technology
8.2. Enhancement-Mode GaN (eGaN)*
- 8.2.1. Introduction
- 8.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
8.3. Depletion-Mode GaN (dGaN)

9. By End-User

9.1. Introduction
- 9.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 9.1.2. Market Attractiveness Index, By End-User
9.2. Consumer Electronics*
- 9.2.1. Introduction
- 9.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
9.3. Automotive
9.4. Telecommunications
9.5. Aerospace & Defense
9.6. Healthcare
9.7. Energy & Utilities
9.8. Others

10. Sustainability Analysis

10.1. Environmental Analysis
10.2. Economic Analysis
10.3. Governance Analysis

11. By Region

11.1. Introduction
- 11.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Region
- 11.1.2. Market Attractiveness Index, By Region
11.2. North America
- 11.2.1. Introduction
- 11.2.2. Key Region-Specific Dynamics
- 11.2.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.2.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.2.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.2.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 11.2.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.2.7.1. US
  - 11.2.7.2. Canada
  - 11.2.7.3. Mexico
11.3. Europe
- 11.3.1. Introduction
- 11.3.2. Key Region-Specific Dynamics
- 11.3.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.3.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.3.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.3.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 11.3.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.3.7.1. Germany
  - 11.3.7.2. UK
  - 11.3.7.3. France
  - 11.3.7.4. Italy
  - 11.3.7.5. Spain
  - 11.3.7.6. Rest of Europe
11.4. South America
- 11.4.1. Introduction
- 11.4.2. Key Region-Specific Dynamics
- 11.4.3. Key Region-Specific Dynamics
- 11.4.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.4.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.4.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.4.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 11.4.8. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.4.8.1. Brazil
  - 11.4.8.2. Argentina
  - 11.4.8.3. Rest of South America
11.5. Asia-Pacific
- 11.5.1. Introduction
- 11.5.2. Key Region-Specific Dynamics
- 11.5.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.5.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.5.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.5.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 11.5.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.5.7.1. China
  - 11.5.7.2. India
  - 11.5.7.3. Japan
  - 11.5.7.4. Australia
  - 11.5.7.5. Rest of Asia-Pacific
11.6. Middle East and Africa
- 11.6.1. Introduction
- 11.6.2. Key Region-Specific Dynamics
- 11.6.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.6.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.6.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.6.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User

12. Competitive Landscape

12.1. Competitive Scenario
12.2. Market Positioning/Share Analysis
12.3. Mergers and Acquisitions Analysis

13. Company Profiles

13.1. Wolfspeed Inc*
- 13.1.1. Company Overview
- 13.1.2. Product Portfolio and Description
- 13.1.3. Financial Overview
- 13.1.4. Key Developments
13.2. Infineon Technologies
13.3. Qorvo
13.4. MACOM Technology Solutions
13.5. Texas Instruments
13.6. NXP Semiconductors
13.7. GaN Systems
13.8. Efficient Power Conversion (EPC)
13.9. Navitas Semiconductor
13.10. STMicroelectronics

LIST NOT EXHAUSTIVE