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世界功率半導體市場、材料與技術
市場調查報告書
商品編碼
1479768

世界功率半導體市場、材料與技術

Power Semiconductors: Markets, Materials and Technologies
出版日期: | 出版商: Information Network | 英文 | 商品交期: 2-3個工作天內

價格

簡介

在從汽車和工業到消費性電子產品和再生能源系統等各個領域對節能解決方案的需求不斷增長的推動下，功率半導體領域正在經歷重大轉型。 隨著世界走向更永續和電氣化的未來，功率半導體在實現高效能能源管理、功率轉換和控制方面的作用變得越來越重要。

趨勢

寬頻隙材料（尤其是 SiC 和 GaN）的出現代表了功率半導體產業的重大典範轉移。 這些材料與傳統的矽基半導體相比具有明顯的優勢，包括高耐壓、快速開關和改進的導熱性，使其成為高性能、節能電力電子的理想選擇。

碳化矽 (SiC) 因其優異的電氣特性而脫穎而出，例如比矽更寬的帶隙和更高的臨界電場強度。 這些特性使碳化矽基設備能夠在更高的溫度和電壓下運行，同時保持高效的性能。 SiC 裝置具有較低的通態和開關損耗，可提高電動車、再生能源系統和工業電源轉換器等各種應用的效率並降低能耗。

同樣，氮化鎵 (GaN) 因其出色的電氣性能（包括寬頻隙和高電子遷移率）而引起人們的注意。 GaN基底元件在功率密度、開關速度和效率方面具有顯著優勢，使其適用於高頻、高功率應用。 GaN 裝置具有低開關損耗，可實現更高的開關頻率和更小、更輕的電力電子系統，使其特別有利於汽車和航空航天應用中更小、更輕的設計。

由於材料生長方法、製造流程和裝置架構的進步，SiC/GaN 材料在功率半導體裝置中的採用正在加速。 隨著產量的增加和製造成本的下降，SiC/GaN 裝置在更廣泛的應用中與矽基元件相比變得更具競爭力。

此外，為了進一步加速 SiC/GaN 技術的採用，研發工作的重點在於優化裝置性能、提高可靠性和降低成本。 這包括設備設計、封裝技術和熱管理解決方案的創新，以解決與寬頻隙材料相關的獨特課題。

總體而言，SiC/GaN 材料的廣泛採用預示著節能電力電子的新時代，旨在提高效率、減少排放並推廣可持續能源解決方案，為產業轉型提供了機會。 隨著這些材料的成熟並在市場上獲得關注，對功率半導體產業的影響將是深遠的。

本報告審視了全球功率半導體市場，並對市場、材料和技術提供了詳細的分析和見解。

目錄

第一章簡介

  • IGBT晶片結構的演變
  • IGBT晶片小型化的影響
  • 與 DMOSFET 相比，溝槽型 SiC MOSFET 的電阻較低
  • 平面和垂直（溝槽）MOSFET
  • FinFET 電路圖
  • MOSFET與超級接面MOSFET的電路圖
  • SiC U MOSFET

第二章功率半導體應用

  • 太陽能發電預測
  • 全橋 IGBT 拓樸
  • 基於微控制器的逆變器框圖
  • 全球風力渦輪機出貨量
  • 主要風力發電能力：依國家劃分
  • 典型 30-50kW 逆變器的零件清單
  • HEV牽引驅動系統示意圖
  • 插電式混合動力車 (PHEV) 的 PEEM 複雜圖
  • 逆變器傳導和開關損耗
  • 功率半導體單價趨勢
  • 寬頻隙半導體系統和組件的成本
  • 垂直/水平HEMT
  • 電動車中的 GaN 水平/GaN 垂直 HEMT
  • LED 業務和應用的市場驅動因素
  • SSL 與傳統技術
  • LED性能與傳統光源的比較
  • 能源生產與使用的比較
  • 通用LED驅動電路
  • 使用 TSV 整合 LED 和 LED 驅動器
  • 簡單功率 MOSFET 馬達控制器
  • 逆變器的基本運作原理
  • 太陽能發電預測
  • 全橋 IGBT 拓樸
  • 基於微控制器的逆變器框圖
  • 全球風力渦輪機出貨量
  • 主要風力發電能力：依國家劃分
  • 典型 30-50kW 逆變器的零件清單
  • HEV牽引驅動系統示意圖
  • 插電式混合動力車 (PHEV) 的 PEEM 複雜圖
  • 逆變器傳導和開關損耗
  • 功率半導體單價趨勢
  • 寬頻隙半導體系統與元件成本

第三章市場分析

  • 功率半導體在半導體市場的地位
  • IGBT與功率MOSFET的成長潛力
  • IGBT市場
    • IGBT技術趨勢
    • IGBT TAM
    • IGBT 市場成長：依應用分類
    • IGBT競爭格局
  • MOSFET 的 TAM
    • MOSFET TAM調查方法
    • MOSFET 市場成長：依應用分類
    • MOSFET的競爭狀況
  • 新的最終用途市場
    • 電動車
  • 5G基礎設施
  • 寬禁頻功率半導體市場

第 4 章新一代功率半導體

  • 對克服矽的限制的期望
  • 對 SiC 和 GaN 作為下一代基板的期望
  • 寬頻隙半導體的優點
  • 碳化矽和氮化鎵
  • 碳化矽設備製造
  • GaN元件的製造
  • 包裝

第五章公司簡介

  • 功率半導體公司
    • Infineon
    • Mitsubishi
    • Toshiba
    • STMicroelectronics
    • Vishay
    • Fuji Electric
    • Renesas
    • Semikron
    • NXP Semiconductors
    • Hitachi Power Semiconductor Device
    • X-Rel Semiconductor
    • Advanced Linear Devices
    • Nexperia
    • Rohm
    • Sanken Electric
    • Shindengen Electric 5+
    • Microchip Technology
    • GeneSiC Semiconductor
    • Semisouth Laboratories
    • United Silicon Carbide
    • MicroGaN
    • Powerex
    • Nitronix
    • Transform
    • Allegro Microsystems
    • GaN Systems
    • Navitas Semiconductor
    • Alpha and Omega Semiconductor
    • ON Semiconductor
    • Jilin Sino-Microelectronics
    • BYD Microelectronics
    • Yangzhou Yangjie Electronic Technology
    • StarPower
    • Sino Micro
    • Yangjie
    • Jiejie
    • GoodArk
    • NCE Power

Introduction

The landscape of power semiconductors is undergoing a profound transformation driven by the escalating demand for energy-efficient solutions across various sectors, ranging from automotive and industrial to consumer electronics and renewable energy systems. As the world transitions towards a more sustainable and electrified future, the role of power semiconductors becomes increasingly pivotal in enabling efficient energy management, power conversion, and control.

The "Power Semiconductors: Markets, Materials, Technologies" report provides a comprehensive analysis of the dynamic power semiconductor market, delving into key trends, emerging materials, and cutting-edge technologies shaping the industry's trajectory. With a focus on market dynamics, material innovations, and technological advancements, the report offers valuable insights into the evolving landscape of power semiconductor devices and their applications across diverse sectors.

Amidst the evolving energy landscape and the imperative for energy conservation, the demand for power semiconductors continues to soar, driven by the need for high-performance, energyefficient solutions. From advanced silicon-based devices to emerging wide-bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN), the report explores the evolving material landscape and its impact on the performance and efficiency of power semiconductor devices.

Moreover, the report examines the latest technological developments and innovations in power semiconductor design, packaging, and integration techniques. From discrete circuits to integrated modules and advanced packaging solutions, the report elucidates the technological trends driving efficiency enhancements, miniaturization, and reliability improvements in power semiconductor devices.

In addition to analyzing market trends and technological advancements, the report also provides insights into the competitive landscape of the power semiconductor industry, profiling key players, their strategies, and market positioning. Furthermore, it assesses regional dynamics, regulatory frameworks, and emerging market opportunities, offering stakeholders a comprehensive understanding of the global power semiconductor ecosystem.

Trends

The emergence of wide-bandgap materials, particularly SiC and GaN, represents a significant paradigm shift in the power semiconductor industry. These materials offer distinct advantages over traditional silicon-based semiconductors, including higher breakdown voltages, faster switching speeds, and improved thermal conductivity, making them ideal candidates for highperformance and energy-efficient power electronic devices.

Silicon carbide (SiC) stands out for its superior electrical properties, including a wider bandgap and higher critical electric field strength compared to silicon. These properties enable SiC-based devices to operate at higher temperatures and voltages while maintaining efficient performance. SiC devices exhibit lower on-state losses and switching losses, translating into higher efficiency and reduced energy consumption in various applications, such as electric vehicles, renewable energy systems, and industrial power converters.

Similarly, gallium nitride (GaN) has garnered attention for its exceptional electrical characteristics, including a wide bandgap and high electron mobility. GaN-based devices offer significant advantages in terms of power density, switching speed, and efficiency, making them well-suited for high-frequency and high-power applications. GaN devices exhibit lower switching losses, enabling higher switching frequencies and reduced size and weight of power electronic systems, which is particularly beneficial for compact and lightweight designs in automotive and aerospace applications.

The adoption of SiC and GaN materials in power semiconductor devices is accelerating, driven by advancements in material growth techniques, manufacturing processes, and device architectures. As production volumes increase and manufacturing costs decline, SiC and GaN devices are becoming increasingly competitive with silicon-based counterparts across a wide range of applications.

Furthermore, ongoing research and development efforts are focused on optimizing device performance, enhancing reliability, and reducing costs to further accelerate the adoption of SiC and GaN technology. This includes innovations in device design, packaging technologies, and thermal management solutions to address the unique challenges associated with wide-bandgap materials.

Overall, the widespread adoption of SiC and GaN materials heralds a new era of energyefficient power electronics, offering transformative opportunities for industries seeking to improve efficiency, reduce emissions, and advance sustainable energy solutions. As these materials continue to mature and gain traction in the market, their impact on the power semiconductor industry is poised to be profound and far-reaching.

About This Report

This comprehensive report delves into various aspects of the power semiconductor industry, providing in-depth analysis and insights into markets, materials, and technologies shaping the landscape. Here's an expanded overview of what the report covers:

Market Analysis: The report offers a detailed examination of the global power semiconductor market, including historical trends, current market dynamics, and future growth prospects. It assesses market size, revenue forecasts, and key drivers and challenges influencing market growth. Additionally, the report provides insights into market segmentation by product type, end-user industry, and geographic region.

Material Trends: It explores the latest advancements and trends in semiconductor materials, with a particular focus on wide-bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN). The report discusses the properties and benefits of these materials, their applications across various industries, and their impact on the performance and efficiency of power semiconductor devices.

Technology Insights: The report delves into emerging technologies and innovations in power semiconductor devices, including silicon-based and wide-bandgap devices. It covers developments in device architectures, manufacturing processes, packaging technologies, and thermal management solutions aimed at enhancing device performance, reliability, and costeffectiveness.

Market Segmentation: An in-depth analysis of the power semiconductor market segmentation is provided, highlighting key product categories such as discrete circuits, module circuits, and power integrated circuits (ICs). The report examines market trends and growth opportunities across different end-user industries, including automotive, consumer electronics, industrial, and power distribution.

Regional Analysis: It offers a comprehensive assessment of the power semiconductor market across major geographic regions, including North America, Europe, and Asia including China. The report analyzes regional market trends, competitive landscapes, and regulatory frameworks shaping the industry landscape in each region.

Competitive Landscape: The report profiles leading companies and key players in the power semiconductor industry, providing insights into their market share, product portfolios, strategic initiatives, and competitive strategies. It assesses the competitive intensity and market positioning of major players, along with their strengths, weaknesses, opportunities, and threats.

Market Opportunities and Challenges: The report identifies and analyzes emerging market opportunities, growth prospects, and challenges facing the power semiconductor industry. It explores factors such as technological advancements, regulatory trends, investment opportunities, and competitive dynamics shaping the market landscape.

Regional Analysis: It offers a comprehensive assessment of the power semiconductor market across major geographic regions, including North America, Europe, and Asia including China. The report analyzes regional market trends, competitive landscapes, and regulatory frameworks shaping the industry landscape in each region.

Competitive Landscape: The report profiles leading companies and key players in the power semiconductor industry, providing insights into their market share, product portfolios, strategic initiatives, and competitive strategies. It assesses the competitive intensity and market positioning of major players, along with their strengths, weaknesses, opportunities, and threats.

Market Opportunities and Challenges: The report identifies and analyzes emerging market opportunities, growth prospects, and challenges facing the power semiconductor industry. It explores factors such as technological advancements, regulatory trends, investment opportunities, and competitive dynamics shaping the market landscape.

Table of Contents

Chapter 1. Introduction

  • 1.1. Evolution Of IGBT Chip Structure
  • 1.2. Effects Of Miniaturization Of IGBT Chip
  • 1.3. SiC Trench-Type MOSFET And Resistance Reduction As Compared With DMOSFET
  • 1.4. Planar And Vertical (Trench) MOSFET
  • 1.5. Schematic Of A FinFET
  • 1.6. Schematic Of A MOSFET And Super Junction MOSFET
  • 1.7. SiC U MOSFET

Chapter 2. Applications of Power Semiconductors

  • 2.1. Forecast Of Solar Power
  • 2.2. Full Bridge IGBT Topology
  • 2.3. Block Diagram Of Microcontroller-Based Inverter
  • 2.4. Worldwide Wind Turbine Shipments
  • 2.5. Top Wind Power Capacity by Country
  • 2.6. Bill Of Materials For A Typical 30-50kw Inverter
  • 2.7. A Simple Diagram Of A HEV Traction Drive System.
  • 2.8. A More Complex Diagram Of PEEM In A Plug-In Hybrid Electric Vehicle (PHEV)
  • 2.9. Conducting And Switching Loses For Inverter
  • 2.10. Unit Pricing Trends In Power Semiconductors
  • 2.11. System And Component Costs For Wide Bandgap Semiconductors
  • 2.12. Vertical And Lateral HEMT
  • 2.13. GaN Lateral And GaN Vertical HEMTs In EVs
  • 2.14. Market Drivers For LED Biz And Applications
  • 2.15. SSL Vs. Classical Technologies
  • 2.16. LED Performance Vs. Traditional Light Sources
  • 2.17. Energy Production And Use Comparison
  • 2.18. Typical LED Drive Circuit
  • 2.19. Integration Of LED And LED Driver Using TSV
  • 2.20. Simple Power MOSFET Motor Controller
  • 2.21. Basic Operating Principle Of Inverter
  • 2.1. Forecast Of Solar Power
  • 2.2. Full Bridge IGBT Topology
  • 2.3. Block Diagram Of Microcontroller-Based Inverter
  • 2.4. Worldwide Wind Turbine Shipments
  • 2.5. Top Wind Power Capacity by Country
  • 2.6. Bill Of Materials For A Typical 30-50kw Inverter
  • 2.7. A Simple Diagram Of A HEV Traction Drive System
  • 2.8. A More Complex Diagram Of PEEM In A Plug-In Hybrid Electric Vehicle (PHEV)
  • 2.9. Conducting And Switching Loses For Inverter
  • 2.10. Unit Pricing Trends In Power Semiconductors
  • 2.11. System And Component Costs For Wide Bandgap Semiconductors

Chapter 3. Market Analysis

  • 3.1. Position of Power Semiconductors in Semiconductor Market
  • 3.2. Growth Potential of IGBTs and Power MOSFETs
  • 3.3. IGBT Market
    • 3.3.1. IGBT Technology Trends
    • 3.3.2. IGBT TAM
    • 3.3.3. IGBT Market Growth By Applications
      • 3.3.3.1. Automotive
      • 3.3.3.2. Power Generation And Grid
      • 3.3.3.3. Consumer Electronics
      • 3.3.3.4. Industrial Controls
      • 3.3.3.5. Railway/Train
      • 3.3.3.6. EV Charging Systems
    • 3.3.4. IGBT Competitive Landscape
      • 3.3.4.1. Global And China Market Share
      • 3.3.4.2. IGBT Business Model
      • 3.3.4.3. Technology Gap Between China And Global Players
  • 3.4. MOSFET TAM
    • 3.4.1. MOSFET TAM Methodology
    • 3.4.2. MOSFET Market Growth By Applications
      • 3.4.2.1. Automotive
      • 3.4.2.2. EV Charging
      • 3.4.2.3. Industrial And Medical
      • 3.4.2.4. Consumer
      • 3.4.2.5. Telecom Network
      • 3.4.3.6. Computing
    • 3.4.4. MOSFET Competitive Landscape
      • 3.4.4.1. Global And China Market Share
      • 3.4.4.2. China Suppliers' Technology/Product Gaps Vs Global Peers
  • 3.5. Emerging End Application Markets
    • 3.5.1. Electric Vehicles
  • 3.5.2 5G Infrastructure
  • 3.4. Wide Bandgap Power Semiconductor Market

Chapter 4. Next-Generation Power Semiconductors

  • 4.1. Expectations for Overcoming Silicon's Limitations
  • 4.2. Expectations Of SiC and GaN as Next-Generation Substrates
  • 4.3. Benefits of Wide Band Gap Semiconductors
  • 4.4. SiC versus GaN
    • 4.4.1. Material Properties
    • 4.4.2. Material Quality
    • 4.4.3. SiC Lateral Devices:
    • 4.4.4. SiC Vertical Devices
    • 4.4.5. GaN Lateral Devices
  • 4.5. Fabrication of SiC devices
    • 4.5.1. Bulk and Epitaxial Growth of SiC
      • 4.5.1.1. Bulk Growth
      • 4.5.1.2. Epitaxial Growth
      • 4.5.1.3. Defects
    • 4.5.2. Surface Preparation
    • 4.5.3. Etching
    • 4.5.4. Lithography
    • 4.5.5. Ion Implantation
    • 4.5.6. Surface Passivation
    • 4.5.7. Metallization
  • 4.6. Fabrication of GaN devices
    • 4.6.1. GaN Challenges
      • 4.6.1.1. Costs
      • 4.6.1.2. Reliability
      • 4.6.1.3. Component Packaging and Thermal Reliability
      • 4.6.1.4. Control
      • 4.6.1.5. Device Modeling
  • 4.7. Packaging

Chapter 5. Company Profiles

  • 5.1. Power Semiconductor Companies
    • 5.1.1. Infineon
    • 5.1.2. Mitsubishi
    • 5.1.3. Toshiba
    • 5.1.4. STMicroelectronics
    • 5.1.5. Vishay
    • 5.1.6. Fuji Electric
    • 5.1.7. Renesas
    • 5.1.8. Semikron
    • 5.1.9. NXP Semiconductors
    • 5.1.10. Hitachi Power Semiconductor Device
    • 5.1.11. X-Rel Semiconductor
    • 5.1.12. Advanced Linear Devices
    • 5.1.13. Nexperia
    • 5.1.14. Rohm
    • 5.1.15. Sanken Electric
    • 5.1.16. Shindengen Electric 5+
    • 5.1.17. Microchip Technology
    • 5.1.18. GeneSiC Semiconductor
    • 5.1.19. Semisouth Laboratories
    • 5.1.20. United Silicon Carbide
    • 5.1.21. MicroGaN
    • 5.1.22. Powerex
    • 5.1.23. Nitronix
    • 5.1.24. Transform
    • 5.1.25. Allegro Microsystems
    • 5.1.26. GaN Systems
    • 5.1.27. Navitas Semiconductor
    • 5.1.28. Alpha and Omega Semiconductor
    • 5.1.29. ON Semiconductor
    • 5.1.30. Jilin Sino-Microelectronics
    • 5.1.31. BYD Microelectronics
    • 5.1.32. Yangzhou Yangjie Electronic Technology
    • 5.1.33. StarPower
    • 5.1.34. Sino Micro
    • 5.1.35. Yangjie
    • 5.1.36. Jiejie
    • 5.1.37. GoodArk
    • 5.1.38. NCE Power

List of Figures

  • 1.1. Evolution Of IGBT Chip Structure
  • 1.2. Effects Of Miniaturization Of IGBT Chip
  • 1.3. SiC Trench-Type MOSFET And Resistance Reduction As Compared With DMOSFET
  • 1.4. Planar And Vertical (Trench) MOSFET
  • 1.5. Schematic Of A FinFET
  • 1.6. Schematic Of A MOSFET And Super Junction MOSFET
  • 1.7. Process Flow For Super Junction MOSFET
  • 2.1. Forecast Of Solar Power
  • 2.2. Full Bridge IGBT Topology
  • 2.3. PV Inverter Market Distribution
  • 2.4. Block Diagram Of Microcontroller-Based Inverter
  • 2.5. Worldwide Wind Turbine Shipments
  • 2.6. Top Wind Power Capacity by Country
  • 2.7. Bill Of Materials For A Typical 30-50kw Inverter
  • 2.8. A Simple Diagram Of A HEV Traction Drive System.
  • 2.9. A More Complex Diagram Of PEEM In A Plug-In Hybrid Electric Vehicle (PHEV)
  • 2.10. Conducting And Switching Loses For Inverter
  • 2.11. Unit Pricing Trends In Power Semiconductors
  • 2.12. HEV/EV Shipment Forecast
  • 2.13. System And Component Costs For Wide Bandgap Semiconductors
  • 2.14. Vertical And Lateral HEMY
  • 2.15. GaN Lateral And GaN Vertical HEMTs In EVs
  • 2.16. Market Drivers For LED Biz And Applications
  • 2.17. SSL Vs. Classical Technologies
  • 2.18. LED Performance Vs. Traditional Light Sources
  • 2.19. Energy Production And Use Comparison
  • 2.20. Typical LED Drive Circuit
  • 2.21. Integration Of LED And LED Driver Using TSV
  • 2.22. Simple Power MOSFET Motor Controller
  • 2.23. Basic Operating Principle Of Inverter
  • 2.24. System Block Diagram Of An Air Conditioner
  • 3.1. Mitsubishi's IGBT (Insulated Gate Bipolar Transistor) Generations
  • 3.2. Infineon's MOSFET Generations
  • 3.3. Intel's FinFET Design
  • 3.4. Fuji's MOSFET versus Super Junction MOSFET
  • 3.5. NEC's GaN-on-Si Power Transistor
  • 3.6. Fujitsu's GaN-on-SiC HEMT Transistor
  • 3.7. Power Semiconductor Market Forecast
  • 3.8. Power Semiconductor Market Shares
  • 3.9. Market Forecast For Super Junction MOSFET
  • 3.10. SJ MOSFETs as an Interim Solution
  • 3.11. Global IGBT Shares By Application
  • 3.12. China IGBT Shares By Application
  • 3.13. Global And China Automotive IGBT Forecast
  • 3.14. Global And China Power Generation IGBT Forecast
  • 3.15. Global And China Consumer IGBT Forecast
  • 3.16. Global And China Industrial IGBT Forecast
  • 3.17. Global And China Industrial IGBT Forecast
  • 3.18. Global And China EV Charging IGBT Forecast
  • 3.19. Global IGBT Module Market Shares
  • 3.20. Global IGBT Discrete Market Shares
  • 3.21. Global MOSFET Shares By Application
  • 3.22. China MOSFET Shares By Application
  • 3.23. Global And China Automotive MOSFET Forecast
  • 3.24. Global And China EV Charging MOSFET Forecast
  • 3.25. Global And China Industrial MOSFET Forecast
  • 3.26. Global And China Consumer MOSFET Forecast
  • 3.27. Global And China Telecom MOSFET Forecast
  • 3.28. Global And China Telecom MOSFET Forecast
  • 3.29. MOSFET Market Shares
  • 3.30. Power Demands For ICE And EV
  • 3.31 5G Demand for Power Semiconductors
  • 3.32. Forecast of Wide Bandgap Semiconductor Market
  • 4.1. Silicon-Based Devices Reaching Maturity
  • 4.2. Enhancement Mode GaN On Si Transistor
  • 4.3. AlGaN/GaN HEMT, GaN MOSFET, MOS-HEMT
  • 4.4. GaN HEMT Material Structure On Si Substrate
  • 4.5. Power Package Integration Roadmap

List of Tables

  • 2.1. Product Families And The Principal End Uses Of Power Products
  • 2.2. Forecast Of On-Grid Inverters By Type
  • 2.3. EV Shipment Forecast
  • 2.4. Advantages And Disadvantages Of GaN Lateral HEMTs
  • 2.5. Light Source Comparison
  • 2.6. Forecast Of GaN And SiC Power Devices By End Applications
  • 3.1. Power Semiconductor Forecast for Electric Vehicles
  • 3.2. 5G Semiconductor Total Available Market Forecast
  • 4.1. Physical Properties Of Select Semiconductor Materials
  • 4.2. Wide Bandgap Material Properties
  • 4.3. Lattice Constant And CTE Of Semiconductor Starting Material
  • 4.4. GaN FET Vs Si MOSFET Characteristics
  • 4.5. Standard Chemical Solution For Surface Preparation Of SiC Substrates
  • 4.6. Interface Trap Densities For 4H-SiC Under Different Process Conditions