市場調查報告書
商品編碼
1541019
2024-2032 年按元件類型、電壓範圍、應用、最終用途產業和地區分類的 GaN 功率元件市場報告GaN Power Device Market Report by Device Type, Voltage Range, Application, End-Use Industry, and Region 2024-2032 |
IMARC Group年全球GaN功率元件市場規模達3.475億美元。由於對能源效率的需求不斷成長、電動車 (EV) 市場的最新進展、半導體行業的不斷創新、可再生能源技術的廣泛採用以及電子產品的不斷小型化,市場正在迅速擴大。
主要市場促進因素:主要促進因素包括各行業不斷向能源效率轉變、對電動汽車(EV)和可再生能源系統不斷成長的需求、半導體行業的快速創新以及可再生能源技術的廣泛採用。
主要市場趨勢:根據 GaN 功率元件市場分析,電子元件持續向小型化轉變以及第五代 (5G) 網路的全球推出正在支持市場成長。
地區趨勢:由於製造基地的不斷擴大、技術的大量投資、對再生能源的日益關注以及汽車行業日益電氣化,多個地區的 GaN 功率裝置市場呈現成長趨勢。
競爭格局:GaN功率元件產業的一些主要市場參與者包括Efficient Power Conversion、GaN Systems Inc.、IQE、Koninklijke Philips NV、MACOM Technology Solutions、Microsemi Corporation (Microchip Technology Inc.)、三菱電機公司、Navitas Semiconductor Inc. 、Qorvo Inc.、住友電氣工業有限公司、德州儀器公司、東芝公司和Wolfspeed Inc. (Cree Inc.) 等。
挑戰和機會:雖然該行業面臨許多限制,例如高昂的前期成本和生產中的技術複雜性,但它也以不斷成長的市場和應用的形式提供了潛力。汽車產業向永續能源和電氣化的持續轉型為氮化鎵功率裝置提供了巨大的發展機會。
對能源效率的需求不斷增加
向能源效率的突然轉變是推動氮化鎵(GaN)功率元件市場成長的主要因素。它們因能夠在比矽基同類產品更高的電壓、頻率和溫度下工作而聞名,從而實現更高效的功率轉換。例如,Efficient Power Conversion (EPC) 推出了 EPC9137,這是一款可擴展的 1.5 kW、兩相 48 V - 12 V 演示板,由氮化鎵 (GaN) FET 供電。此演示板的設計具有可擴展性,兩個轉換器可以並聯以達到 3 kW,或者三個轉換器可以並聯以達到 4.5 kW。到 2025 年,預計全球每售出 10 輛汽車就有 1 輛是 48 V 輕度混合動力汽車。這些混合動力系統可提高燃油效率,提供四倍的功率,並減少二氧化碳排放,需要 48V - 12V 雙向轉換器,功率範圍為 1.5 kW 至 6 kW。 EPC eGaN FET 可在250 kHz 開關頻率下以97% 的效率運行,與矽基解決方案相比,可實現800 W/相,而矽基解決方案由於100 kHz 最大開關頻率下電感器電流的限制,功率限制為600 W/相。這一趨勢得到了旨在減少能源消耗和碳足跡的政府法規和政策的支持,進一步推動了氮化鎵功率裝置市場的發展。
電動車 (EV) 市場的成長
蓬勃發展的電動車市場是氮化鎵功率裝置成長的重要催化劑。這些元件對於電動車中的車載充電器、DC/DC 轉換器和電源逆變器等應用至關重要。 GaN 卓越的效率和高功率密度非常適合電動車,有助於打造更輕、更小、更可靠的系統。例如,IQE plc 與 GaN 公司 VisIC 進行策略合作,開發了電動車逆變器的高可靠性 GaN D 型(D-Mode GaN)功率產品。他們開發了 200mm D 模式 GaN 功率外延片,可實現電動車的更長續航里程和更快的充電時間,解決了電動車採用過程中面臨的兩個最重大挑戰。此外,EPC 還宣布開發出基於 GaN 的 EPC9194 逆變器參考設計,該設計可提高馬達驅動系統的效率、範圍和扭矩,同時使單位重量的功率加倍。它的工作輸入電源電壓範圍為 14 V 至 60 V,可提供高達 60 Apk (40 ARMS) 的輸出電流。此電壓範圍和功率位準使此解決方案非常適合各種三相 BLDC 馬達驅動器,包括電動自行車、電動滑板車、無人機、機器人和直流伺服馬達。
半導體技術的進步
半導體材料和製造流程的不斷改進和突破,顯著降低了GaN功率元件的成本並提高了性能。例如,領先的半導體解決方案供應商MACOM Technology Solutions Inc.(“MACOM”)開發了新型碳化矽氮化鎵(GaN-on-SiC)功率放大器產品線,並推出了前兩款新產品。 MAPC-A1000 和MAPC-A1100。 MAPC-A1000 是一款高功率 GaN-on-SiC 放大器,設計工作頻率為 30 MHz 至 2.7 GHz。它整合了輸入匹配,從而簡化了客戶的設計工作。當在設計用於在 2.2 GHz 同步頻寬上運行的電路中進行測試時,它還可以在 500 MHz 至 2.7 GHz 範圍內以超過 50% 的效率提供超過 25 W (44dBm) 的功率。除此之外,MAPC-A1100 是一款高功率 GaN-on-SiC 放大器,設計工作頻率高達 3.5 GHz。此元件能夠支援 CW 和脈衝操作,採用氣腔陶瓷封裝,輸出功率位準至少為 65 W (48.1dBm)。預計這些進步將在預測期內促進市場成長。
IMARC Group提供了每個細分市場的主要趨勢分析,以及 2024-2032 年全球、區域和國家層面的預測。我們的報告根據設備類型、電壓範圍、應用和最終用途行業對市場進行了分類。
功率元件
分離式功率元件
整合式功率元件
射頻功率元件
分立射頻功率裝置
整合式射頻功率裝置
該報告根據設備類型對市場進行了詳細的細分和分析。其中包括功率元件(分離功率元件和整合式功率元件)和射頻功率元件(分離式射頻功率元件和整合式射頻功率元件)。
根據GaN功率元件市場分析,功率元件領域專門處理需要高效率的功率轉換和管理應用。它涉及再生能源、汽車、工業和消費性電子等行業的電源、逆變器和轉換器。 GaN 功率元件因其效率、優異的導熱性以及在更高頻率和溫度下工作的能力而受到讚譽。
根據GaN功率元件市場細分,射頻(RF)功率元件用於需要產生和管理高頻訊號的應用。它是電信設備所必需的,例如蜂窩基地台、衛星通訊和雷達系統,包括軍事和國防應用中使用的設備。 GaN 射頻功率元件以其高頻功率密度、效率和可靠性而聞名。
<200伏
200-600伏
>600 伏
報告還提供了基於電壓範圍的詳細市場細分和分析。這包括<200 伏特、200-600 伏特和>600 伏特。
根據GaN功率裝置市場統計,<200V類別強調消費性電子、行動裝置和汽車子系統中的中低功率應用。它適用於為手機、筆記型電腦和其他攜帶式設備提供快速充電。它們具有更高的效率和熱性能,可實現更輕、更緊湊、更節能的電源適配器和轉換器,使其在消費性電子領域越來越受歡迎。
根據GaN功率元件市場分析,200-600伏GaN功率元件涵蓋廣泛的應用,包括電動車(EV)、再生能源系統和工業電源。它用於電動汽車車載充電器、DC/DC轉換器和太陽能逆變器,以提高效率、縮小尺寸並調節熱量,從而推動GaN功率裝置市場的最新發展。
根據GaN功率裝置市場概況,>600伏類別廣泛用於高功率應用,例如工業馬達、電網基礎設施和高壓直流(HVDC)傳輸系統。它因其承受高電壓的能力而聞名,同時最大限度地減少損耗並提高效率。此外,GaN 在高電壓下有效工作的能力使其非常適合需要強大功率處理能力的應用,例如工業機械和電網規模功率轉換。
電力驅動
電源系統
基於射頻的系統
該報告根據應用程式提供了詳細的市場細分和分析。這包括電力驅動器、電源系統和基於射頻的系統。
根據 GaN 功率元件市場前景,功率驅動器領域迎合了涉及電動馬達和驅動器控制和管理的應用。它包括電動車 (EV)、工業自動化系統和高性能計算冷卻系統。 GaN 卓越的效率和高開關頻率可實現緊湊、輕量化和節能的馬達驅動設計,對 GaN 功率裝置市場促進因素產生積極影響。
在電源系統領域,GaN 功率元件正在改進消費性電子、電信和資料中心的電源裝置 (PSU)、適配器和轉換器的設計和功能。其固有特性(例如低導通電阻和高導熱性)允許更小、更輕、更節能的電源在更高頻率下運行,同時減少熱量產生,從而推動 GaN 功率裝置的市場佔有率。
基於射頻 (RF) 的系統部分專注於需要高頻訊號產生和放大的應用,例如蜂窩基地台、雷達系統、衛星通訊和射頻加熱。它們因其在微波和毫米波頻率下的高功率密度、效率和可靠性而受到讚譽,可實現更緊湊、更節能的射頻系統。
電信
汽車
再生能源發電
軍隊
航太和國防
消費性電子產品
其他
報告還提供了基於最終用途行業的詳細市場細分和分析。這包括電信、汽車、再生能源發電、軍事、航空航太和國防、消費性電子產品等。
在電信業,GaN 功率元件可提高網路效率和蜂窩網路基地台部署能力,包括第五代 (5G) 技術的擴展。此外,它們還能夠處理高功率密度並在高頻下高效運行,使電信設備能夠支援增加的資料流量並提供更快、更可靠的無線通訊。
隨著 GaN 功率元件的使用,汽車領域正在經歷重大變革,尤其是在電動車 (EV) 和混合動力系統中。它用於電動車動力系統、車載充電器、DC/DC 轉換器和電源逆變器,與傳統矽基組件相比,具有更高的效率、更小的尺寸和重量優勢。此外,為滿足嚴格的環境法規和提高車輛性能並不斷向電氣化轉變,正在對 GaN 功率裝置市場的未來產生積極影響。
根據GaN功率元件市場趨勢,它在太陽能光伏逆變器和風電轉換器等再生能源發電領域發揮著舉足輕重的作用。它們卓越的效率和高頻運行能力使再生能源系統更加緊湊和更具成本效益。此外,向永續能源的突然轉變,促進了GaN技術的使用,以最大限度地提高再生電力系統的轉換效率,正在增強GaN功率裝置的市場需求。
在軍事、航空航太和國防工業中,GaN功率元件對於在惡劣環境下需要高功率和可靠性的應用至關重要,例如雷達系統、衛星通訊和電子戰。此外,GaN在極端條件下的穩健性和高效能在各種關鍵應用中提供了顯著的優勢,以確保操作的有效性和可靠性。
消費性電子領域利用 GaN 功率元件來滿足對更小、更有效率、更強大的電子設備不斷成長的需求。它們為智慧型手機、筆記型電腦、穿戴式裝置和智慧家居設備提供緊湊型電源轉接器、快速充電技術和高效能電源管理解決方案。此外,不斷推動小型化以及對高性能電子產品的需求正在推動 GaN 功率元件市場的成長。
北美洲
美國
加拿大
亞太地區
中國
日本
印度
韓國
澳洲
印尼
其他
歐洲
德國
法國
英國
義大利
西班牙
俄羅斯
其他
拉丁美洲
巴西
墨西哥
其他
中東和非洲
該報告還對所有主要區域市場進行了全面分析,其中包括北美(美國和加拿大);亞太地區(中國、日本、印度、韓國、澳洲、印尼等);歐洲(德國、法國、英國、義大利、西班牙、俄羅斯等);拉丁美洲(巴西、墨西哥等);以及中東和非洲。
亞太地區正在快速成長,這得益於其強大的製造基礎、對技術和基礎設施的大量投資以及汽車、消費電子和再生能源等最終用途產業的快速成長。中國、日本和韓國等國家在電動車 (EV) 生產和電信基礎設施以及 5G 網路部署方面處於領先地位。例如,中國佔全球電動車 (EV) 銷量的 58%,佔電動車總產量的 70%。
由於越來越多的人轉向電動車,歐洲的 GaN 功率元件市場受到該地區對能源效率、再生能源和汽車行業的高度重視的推動。此外,歐盟對碳排放和能源消耗的嚴格規定鼓勵採用GaN等先進技術。例如,歐洲議會通過了《歐洲氣候法》,提高了歐盟到2030年將溫室氣體淨排放量減少至少55%、到2050年使氣候中和具有法律約束力的目標。
北美是 GaN 功率元件的主要市場,其特點是技術採用率高、研發 (R&D) 能力先進以及完善的電信和汽車產業。美國在 GaN 技術的發展中發揮關鍵作用,並得到領先半導體公司和研究機構的支持。
在電信、再生能源和汽車產業投資不斷增加的推動下,拉丁美洲的 GaN 功率元件市場正在興起。此外,人們對永續發展和能源效率的日益關注,為GaN功率裝置應用的擴展提供了機遇,也促進了市場的成長。
中東和非洲 (MEA) 地區對再生能源、電信和基礎設施開發相關應用中的 GaN 功率裝置的興趣日益濃厚。此外,中東和非洲地區國家擴大投資於太陽能專案和基礎設施現代化,推動了對高效電力轉換技術的需求。
市場研究報告也對市場競爭格局進行了全面分析。也提供了所有主要公司的詳細資料。 GaN功率裝置產業的一些主要市場參與者包括Efficient Power Conversion、GaN Systems Inc.、IQE、Koninklijke Philips NV、MACOM Technology Solutions、Microsemi Corporation (Microchip Technology Inc.)、三菱電機公司、Navitas Semiconductor Inc.、 Qorvo Inc .、住友電氣工業株式會社、德州儀器公司、東芝公司、Wolfspeed Inc. (Cree Inc.) 等
(請注意,這只是關鍵參與者的部分列表,報告中提供了完整列表。)
GaN功率元件市場的主要參與者正在積極投入研發(R&D),以提高效率、降低成本並開闢新的應用領域。此外,他們還專注於製造流程和裝置設計的創新,以提高GaN裝置的性能和可靠性。例如,住友電氣工業株式會社開發了一種使用 N 極 GaN 的氮化鎵電晶體 (GaN-HEMT),適用於包括 5G 在內的高頻放大器應用。除此之外,主要參與者正在建立策略夥伴關係和協作,以利用彼此的優勢,加速 GaN 解決方案的開發和商業化。
2024 年3 月,Efficient Power Conversion (EPC) 宣布推出EPC9193,這是一款採用EPC2619 eGaN FET 的三相BLDC 馬達驅動逆變器,可在14 V 和65 V 的寬輸入直流電壓下工作,並具有兩種配置,一個標準單元和一個高電流版本。 EPC9193 標準參考設計為每個開關位置使用單一 FET,可提供高達 30 ARMS 的最大輸出電流。而高電流配置版本 EPC9193HC 在每個開關位置使用兩個並聯 FET,並且能夠提供高達 60 Apk (42 ARMS) 的最大輸出電流。 EPC9193 的兩個版本均包含支援完整馬達驅動逆變器所需的所有關鍵功能電路,包括閘極驅動器、用於內務電源的穩壓輔助電源軌、電壓和溫度感應、精確電流感應和保護功能。
2023 年9 月,GaN Systems(英式飛躍)宣布推出突破性的第四代GaN 功率平台,該平台提供新的功率效率和緊湊性標準,實現令人印象深刻的階躍函數性能提升和行業領先的品質因數。例如,借助人工智慧 (AI) 伺服器機架中的 GaN Systems Gen4,2022 年 100W/in3 的 3.2kW 電源將實現 120W/in3,效率高於鈦金屬水平。第四代將徹底改變電力市場,包括消費性電子、資料中心、太陽能、工業應用和汽車。
The global GaN power device market size reached US$ 347.5 Million in 2023. Looking forward, IMARC Group expects the market to reach US$ 3,864.9 Million by 2032, exhibiting a growth rate (CAGR) of 29.8% during 2024-2032. The market is rapidly expanding, driven by the growing demand for energy efficiency, recent advancements in electric vehicle (EV) market, rising innovations in the semiconductor industry, widespread adoption of renewable energy technology, and the ongoing miniaturization of electronics.
Major Market Drivers: The key drivers include the ongoing shift towards energy efficiency across various sectors, the increasing demand for electric vehicles (EVs) and renewable energy systems, rapid innovations in the semiconductor industry, and the heightened adoption of renewable energy technology.
Key Market Trends: Based on the GaN power device market analysis, the ongoing shift towards the miniaturization of electronic devices and the global rollout of fifth generation (5G) networks are supporting the market growth.
Geographical Trends: Several regions are showing growth in the GaN power device market, due to the growing manufacturing base, significant investments in technology, rising focus on renewable energy, and the increasing electrification of the automotive sector.
Competitive Landscape: Some of the major market players in the GaN power device industry include Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation, and Wolfspeed Inc. (Cree Inc.), among many others.
Challenges and Opportunities: While the industry confronts numerous constraints, such as high upfront cost and technical complications in production, it also offers potential in the form of growing markets and applications. The continued transition towards sustainable energy and the electrification of the automobile sector offers tremendous development opportunities for GaN Power devices.
Increasing Demand for Energy Efficiency
The sudden shift towards energy efficiency is a major factor driving the gallium nitride (GaN) power devices market growth. They are known for their ability to operate at higher voltages, frequencies, and temperatures than silicon-based counterparts, leading to more efficient power conversion. For instance, Efficient Power Conversion (EPC) launched EPC9137, a scalable 1.5 kW, two-phase 48 V - 12 V demonstration board powered by gallium nitride (GaN) FETs. The design of this demonstration board is scalable as two converters can be paralleled to achieve 3 kW, or three converters can be paralleled to achieve 4.5 kW. By 2025, one of every ten vehicles sold across the globe is projected to be a 48 V mild hybrid. These hybrid systems boost fuel efficiency, deliver four times the power, and reduce carbon dioxide emissions, requiring a 48V - 12V bidirectional converter, with power ranging from 1.5 kW to 6 kW. EPC eGaN FETs can operate with 97% efficiency at 250 kHz switching frequency, enabling 800 W/phase compared to silicon-based solutions, which are limited to 600 W/phase due to the limitation on the inductor current at 100 kHz maximum switching frequency. This trend is supported by governmental regulations and policies aimed at reducing energy consumption and carbon footprints, further propelling the market for GaN power devices.
Growth in the Electric Vehicle (EV) Market
The booming EV market is a significant catalyst for the growth of GaN power devices. These devices are critical in EVs for applications such as onboard chargers, DC/DC converters, and power inverters. GaN's superior efficiency and high-power density is ideal for EVs, contributing to lighter, smaller, and more reliable systems. For instance, IQE plc, in a strategic collaboration with GaN company VisIC, developed high-reliability GaN D-Mode (D-Mode GaN) power products for use in EV inverters. They developed 200mm D-Mode GaN power epiwafers for longer ranges and faster charging times for EVs, addressing two of the most significant challenges in electric vehicle adoption. Moreover, EPC announced the development of the EPC9194 GaN-based inverter reference design that enhances motor drive system efficiency, range, and torque while doubling the power per weight. It operates from an input supply voltage range of 14 V to 60 V and delivers up to 60 Apk (40 ARMS) output current. This voltage range and power level make the solution ideal for a variety of 3-Phase BLDC motor drives, including eBikes, eScooters, drones, robots, and DC servo motors.
Advancements in Semiconductor Technology
Continuous improvements and breakthroughs in semiconductor materials and manufacturing processes have significantly reduced the cost and improved the performance of GaN power devices. For instance, MACOM Technology Solutions Inc. ("MACOM"), a leading supplier of semiconductor solutions, developed a new gallium nitride on silicon carbide (GaN-on-SiC) power amplifier product line, along with the introduction of the first two new products, the MAPC-A1000 and the MAPC-A1100. The MAPC-A1000 is a high-power GaN-on-SiC amplifier designed to operate between 30 MHz and 2.7 GHz. It integrates an input match, which simplifies the customer's design-in effort. It can also deliver more than 25 W (44dBm) at greater than 50% efficiency from 500 MHz to 2.7 GHz when tested in a circuit designed for operation over 2.2 GHz simultaneous bandwidth. Along with this, the MAPC-A1100 is a high-power GaN-on-SiC amplifier that is designed to operate up to 3.5 GHz. The device is capable of supporting CW and pulsed operations with output power levels of at least 65 W (48.1dBm) in an air cavity ceramic package. These advancements are expected to bolster the market growth over the forecasted period.
IMARC Group provides an analysis of the key trends in each segment of the market, along with forecasts at the global, regional, and country levels for 2024-2032. Our report has categorized the market based on device type, voltage range, application, and end-use industry.
Power Device
Discrete Power Device
Integrated Power Device
RF Power Device
Discrete RF Power Device
Integrated RF Power Device
The report has provided a detailed breakup and analysis of the market based on the device type. This includes power device (discrete power device and integrated power device) and RF power device (discrete RF power device and integrated RF power device).
According to the GaN power device market analysis, the power device sector specializes in dealing with applications that demand efficient power conversion and management. It involves power supply, inverters, and converters for industries, such as renewable energy, automotive, industrial, and consumer electronics. GaN power devices are praised for their efficiency, excellent thermal conductivity, and ability to operate at greater frequencies and temperatures.
In accordance with the GaN power device market segmentation, radio frequency (RF) power devices are used for applications that demand the generation and management of high-frequency signals. It is required in telecommunications devices, like cellular base stations, satellite communications, and radar systems, including those used in military and defense applications. GaN RF power devices are renowned for their great power density, efficiency, and reliability at high frequencies.
<200 Volt
200-600 Volt
>600 Volt
A detailed breakup and analysis of the market based on the voltage range have also been provided in the report. This includes <200 volt, 200-600 volt, and >600 volt.
According to the GaN power device market statistics, the <200-volt category emphasizes low to medium-power applications in consumer electronics, mobile devices, and automotive subsystems. It is suitable for providing quick charging for cellphones, laptops, and other portable devices. Their higher efficiency and thermal performance allow for lighter, compact, and more energy-efficient power adapters and converters, making them increasingly popular in the consumer electronics sector.
In accordance with the GaN power device market analysis, the 200-600 volt GaN power device covers a wide range of applications, including electric vehicles (EVs), renewable energy systems, and industrial power supply. It is used in EV onboard chargers, DC/DC converters, and solar inverters to increase efficiency, reduce size, and regulate heat, thereby boosting the GaN power device market recent developments.
According to the GaN power device market overview, the >600-volt category is widely utilized for high-power applications, such as industrial motors, grid infrastructure, and high-voltage direct current (HVDC) transmission systems. It is regarded for its capacity to withstand high voltages while minimizing losses and increasing efficiency. Furthermore, GaN's ability to function effectively at high voltages makes it ideal for applications requiring strong power handling capabilities, such as industrial machinery and grid-scale power conversion.
Power Drives
Power Supply Systems
Radio Frequency Based Systems
The report has provided a detailed breakup and analysis of the market based on the application. This includes power drives, power supply systems, and radio frequency based systems.
In line with this GaN power device market outlook, the power drives segment caters to applications involving the control and management of electric motors and drives. It includes electric vehicles (EVs), industrial automation systems, and high-performance computing cooling systems. GaN's exceptional efficiency and high switching frequencies that enable compact, lightweight, and energy-efficient designs for motor drives are positively influencing the GaN power device market drivers.
In the power supply systems segment, GaN power devices are improving the design and functionality of power supply units (PSUs), adapters, and converters across consumer electronics, telecommunications, and data centers. Their inherent properties, such as low on-resistance and high thermal conductivity, allow for smaller, lighter, and more energy-efficient power supplies to operate at higher frequencies with reduced heat generation, propelling the GaN power device market share.
The radio frequency (RF) based systems segment focuses on applications requiring high-frequency signal generation and amplification, such as cellular base stations, radar systems, satellite communications, and RF heating. They are lauded for their high-power density, efficiency, and reliability at microwave and millimeter-wave frequencies, enabling more compact and energy-efficient RF systems.
Telecommunications
Automotive
Renewable Power Generation
Military
Aerospace and Defense
Consumer Electronics
Others
A detailed breakup and analysis of the market based on the end-use industry have also been provided in the report. This includes telecommunications, automotive, renewable power generation, military, aerospace and defense, consumer electronics, and others.
In the telecommunications industry, GaN power devices enhance network efficiency and capacity for the deployment of base stations for cellular networks, including the expansion of fifth-generation (5G) technology. Moreover, they provide the ability to handle high power densities and operate efficiently at high frequencies, which enables telecommunications equipment to support increased data traffic and provide faster and more reliable wireless communication.
The automotive segment is witnessing a significant transformation with the adoption of GaN power devices, especially in electric vehicles (EVs) and hybrid systems. It is utilized in EV powertrains, onboard chargers, DC/DC converters, and power inverters, offering higher efficiency, reduced size, and weight advantages over traditional silicon-based components. Furthermore, the ongoing shift towards electrification to meet stringent environmental regulations and enhance vehicle performance is positively influencing the future of the GaN power device market.
According to the GaN power device market trends, it plays a pivotal role in the renewable power generation sector for solar photovoltaic (PV) inverters and wind power converters. Their superior efficiency and ability to operate at high frequencies enable more compact and cost-effective renewable energy systems. Moreover, the sudden shift towards sustainable energy sources, boosting the use of GaN technology to maximize the conversion efficiency of renewable power systems, is enhancing the GaN power device market demand.
In the military, aerospace, and defense industries, GaN power devices are crucial for applications that require high power and reliability in harsh environments, such as radar systems, satellite communications, and electronic warfare. Moreover, the robustness and high performance of GaN under extreme conditions offer significant advantages in various critical applications to ensure operational effectiveness and reliability.
The consumer electronics segment leverages GaN power devices to meet the growing demand for smaller, more efficient, and powerful electronic devices. They enable compact power adapters, fast charging technologies, and efficient power management solutions for smartphones, laptops, wearables, and smart home devices. Moreover, the continuous push towards miniaturization and the need for high-performance electronics are providing a thrust to the GaN power device market growth.
North America
United States
Canada
Asia Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
The report has also provided a comprehensive analysis of all the major regional markets, which include North America (the United States and Canada); Asia Pacific (China, Japan, India, South Korea, Australia, Indonesia, and others); Europe (Germany, France, the United Kingdom, Italy, Spain, Russia, and others); Latin America (Brazil, Mexico, and others); and the Middle East and Africa.
The Asia Pacific region is growing rapidly, attributed to its robust manufacturing base, significant investments in technology and infrastructure, and the rapid growth of end-use industries, such as automotive, consumer electronics, and renewable energy. Countries like China, Japan, and South Korea are at the forefront of electric vehicle (EV) production and telecommunications infrastructure, coupled with the deployment of 5G networks. For example, China accounted for 58% of global sales of electric vehicles (EVs) and a mammoth 70% of total EV production.
Europe's GaN power device market is driven by the region's strong emphasis on energy efficiency, renewable energy, and the automotive sector, owing to the rising shift towards electric vehicles. Moreover, the European Union's stringent regulations on carbon emissions and energy consumption encourage the adoption of advanced technologies like GaN. For instance, the European Parliament has adopted the European Climate Law, which raises the EU's target of reducing net greenhouse gas emissions by at least 55% by 2030 and making climate neutrality by 2050 legally binding.
North America is a key market for GaN power devices, characterized by high technological adoption rates, advanced research and development (R&D) capabilities, and a well-established telecommunications and automotive industry. The United States plays a pivotal role in the development of GaN technology, supported by the presence of leading semiconductor companies and research institutions.
The Latin American market for GaN power devices is emerging, driven by increasing investments in telecommunications, renewable energy, and automotive sectors. Moreover, the rising focus on sustainable development and energy efficiency, which presents opportunities for the expansion of GaN power device applications, is contributing to the market growth.
The Middle East and Africa (MEA) region is witnessing a growing interest in GaN power devices in applications related to renewable energy, telecommunications, and infrastructure development. Moreover, countries in the MEA region are increasingly investing in solar energy projects and infrastructure modernization, driving the demand for efficient power conversion technologies.
The market research report has also provided a comprehensive analysis of the competitive landscape in the market. Detailed profiles of all major companies have also been provided. Some of the major market players in the GaN power device industry include Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation, Wolfspeed Inc. (Cree Inc.), etc.
(Please note that this is only a partial list of the key players, and the complete list is provided in the report.)
Key players in the GaN power device market are actively engaging in research and development (R&D) to enhance efficiency, reduce costs, and open up new application areas. Moreover, they are focusing on innovation in manufacturing processes and device design to improve the performance and reliability of GaN devices. For instance, Sumitomo Electric Industries, Ltd. developed a gallium nitride transistor (GaN-HEMT) that uses N-polar GaN, for high-frequency amplifier applications, including 5G. Besides this, major players are forming strategic partnerships and collaborations to leverage each other's strengths to accelerate the development and commercialization of GaN solutions.
In March 2024, Efficient Power Conversion (EPC) announced the launch of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN FET, which operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations, a standard unit and a high current version. The EPC9193 standard reference design uses a single FET for each switch position and can deliver up to 30 ARMS maximum output current. Whereas the high current configuration version, the EPC9193HC, uses two paralleled FETs per switch position, coupled with the ability to deliver up to 60 Apk (42 ARMS) maximum output current. Both versions of the EPC9193 contain all the necessary critical function circuits to support a complete motor drive inverter, including gate drivers, regulated auxiliary power rails for housekeeping supplies, voltage, and temperature sense, accurate, current sense, and protection functions.
In September 2023, GaN Systems (Infineon) announced the introduction of its groundbreaking 4th generation GaN power platform that offers new power efficiency and compactness standards, delivering an impressive step-function performance boost and industry-leading figures of merit. For example, with GaN Systems Gen4 in an artificial intelligence (AI) server rack, 3.2kW power supplies at 100W/in3 in 2022 are achieving 120W/in3 with efficiencies above Titanium levels. Gen4 will revolutionize power markets, including consumer electronics, data centers, solar energy, industrial applications, and automotive.