市場調查報告書
商品編碼
1288654
全球功率GaN裝置市場研究報告 - 行業分析、規模、佔有率、成長、趨勢和2023年至2030年預測Global Power GaN Devices Market Research Report - Industry Analysis, Size, Share, Growth, Trends and Forecast 2023 to 2030 |
全球對功率型氮化鎵裝置的需求預計將從2022年的87.84百萬美元到2030年達到近2315.3百萬美元的市場規模,在2023-2030年的研究期間,複合成長率為43.84%。在數量方面,2022年的市場規模為XX百萬單位,預計到2030年將達到XX百萬單位,2023-2030年的複合年成長率為XX%。
功率GaN(氮化鎵)裝置是使用氮化鎵技術製造的電子元件。它們被用於電力電子系統的高電壓、高頻率和高功率應用。與傳統的矽基功率裝置相比,功率氮化鎵裝置具有多種優勢,包括更高的開關速度、更高的功率密度和更高的效率。功率型GaN裝置通常用於各種應用,包括電動汽車、太陽能和風能系統、電源和資料中心。這些裝置非常適用於需要高效率、高功率密度和高開關速度的應用,如汽車、工業和電信領域的應用。市場上有幾種類型的功率GaN裝置,包括GaN HEMT(高電子遷移率電晶體)、GaN Schottky二極管和基於GaN的整合電路(IC)。氮化鎵HEMT由於能夠處理高電壓和高功率的應用,所以通常用於電力電子系統。氮化鎵肖特基二極管用於整流電路,可以處理高頻開關應用,而基於氮化鎵的整合電路則用於整合電力電子應用。
由於電子設備的使用越來越多,以及在可再生能源系統、電動汽車和資料中心等廣泛的應用中需要高效和可靠的電力轉換,對電力電子的需求正在迅速成長。功率型氮化鎵裝置具有高效率、高功率密度和高開關速度,是電力電子應用的理想選擇。與傳統的矽基裝置相比,功率GaN裝置能夠處理更高的電壓和電流,使其成為需要高功率密度、高頻率工作和高開關速度的高性能應用的理想選擇。氮化鎵技術的進步,包括晶體生長、襯底品質和裝置設計的改進,促使了更高性能的功率氮化鎵裝置的發展,其效率和可靠性比傳統矽基裝置更好。對可再生能源(風能和太陽能)的需求不斷成長,推動了對高性能電力電子裝置的需求,以轉換和控制這些能源產生的能量。功率GaN裝置由於其高效率和高可靠性,非常適合這些應用。對電動汽車的需求不斷增加,推動了對高性能電力電子裝置的需求,以控制電動馬達和電池系統。功率型氮化鎵裝置具有高效率、高功率密度和高開關速度,是電動汽車應用的理想選擇。
該研究報告包括波特五力模型、市場吸引力分析和價值鏈分析。這些工具有助於清楚地了解行業結構,並在全球範圍內評估競爭的吸引力。此外,這些工具還對全球電力設備市場的每個細分市場進行了全面評估。電源甘裝置行業的成長和趨勢為這項研究提供了一個整體的方法。
這一部分涵蓋了區域前景,強調了北美、歐洲、亞太、拉美、中東和非洲的功率GaN裝置市場的當前和未來需求。此外,報告還重點介紹了所有突出地區的個別應用部門的需求、估計和預測。
該研究報告還涵蓋了市場中主要參與者的全面概況和對全球競爭格局的深入看法。功率甘裝置市場的主要參與者包括Efficient Power Conversion Corporation Inc., Fujitsu limited, GaN Power Inc., GaN Systems, Infineon Technologies, Navitas Semiconductor, NexGen Power Systems, On Semiconductors, Panasonic Corporation, Power Integrations Inc., ROHM CO.LTD., SOITEC, Texas Instruments Incorporated, Transphorm Inc., VisIC Technologies.這一部分包括對競爭格局的整體看法,其中包括各種戰略發展,如主要的合併和收購,未來的能力,夥伴關係,財務概況,合作,新產品的開發,新產品的推出,以及其他發展。
注意- 在公司簡介中,財務細節和最近的發展情況要視情況而定,如果是私營公司,可能不包括在內。
The global demand for Power GaN Devices Market is presumed to reach the market size of nearly USD 2315.3 MN by 2030 from USD 87.84 MN in 2022 with a CAGR of 43.84% under the study period 2023-2030. Regarding volume, the market was calculated XX Million Units in 2022 and forecast to touch XX Million Units by 2030 with a CAGR of XX% during 2023-2030.
Power GaN (Gallium Nitride) devices are electronic components that are made using Gallium Nitride technology. They are used in power electronic systems for high voltage, high frequency and high power applications. Power GaN devices offer several advantages over traditional silicon-based power devices, including higher switching speeds, higher power density, and higher efficiency. Power GaN devices are typically used in a variety of applications, including electric vehicles, solar and wind power systems, power supplies, and data centres. These devices are well-suited for applications that require high efficiency, high power density, and high switching speeds, such as those found in the automotive, industrial, and telecommunications sectors. There are several types of power GaN devices available on the market, including GaN HEMTs (High Electron Mobility Transistors), GaN Schottky diodes, and GaN-based integrated circuits (ICs). GaN HEMTs are commonly used in power electronic systems due to their ability to handle high voltage and high power applications. GaN Schottky diodes are used in rectifier circuits and can handle high-frequency switching applications, while GaN-based ICs are used in integrated power electronics applications.
The demand for power electronics is growing rapidly owing to the increasing use of electronic devices and the need for efficient and reliable power conversion in a wide range of applications, including renewable energy systems, electric vehicles, and data centres. Power GaN devices offer high efficiency, high power density, and high switching speeds, making them ideal for power electronics applications. Power GaN devices are capable of handling higher voltages and currents than traditional silicon-based devices, making them ideal for high-performance applications that require high power density, high-frequency operation, and high switching speeds. Advances in GaN technology, including improvements in crystal growth, substrate quality, and device design, have led to the development of higher-performance power GaN devices that offer better efficiency and reliability than traditional silicon-based devices. The growing demand for renewable energy sources (wind and solar power) is driving the demand for high-performance power electronics to convert and control the energy generated by these sources. Power GaN devices are well-suited for these applications due to their high efficiency and reliability. The increasing demand for electric vehicles is driving the need for high-performance power electronics to control electric motor and battery systems. Power GaN devices offer high efficiency, high power density, and high switching speeds, making them ideal for electric vehicle applications.
The research report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of power gan devices. The growth and trends of power gan devices industry provide a holistic approach to this study.
This section of the power gan devices market report provides detailed data on the segments at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
This section covers the regional outlook, which accentuates current and future demand for the Power GaN Devices market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the power gan devices market include Efficient Power Conversion Corporation Inc., Fujitsu limited, GaN Power Inc., GaN Systems, Infineon Technologies, Navitas Semiconductor, NexGen Power Systems, On Semiconductors, Panasonic Corporation, Power Integrations Inc., ROHM CO. LTD., SOITEC, Texas Instruments Incorporated, Transphorm Inc., VisIC Technologies. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
Note - in company profiling, financial details and recent development are subject to availability or might not be covered in case of private companies
Kindly note that the above listed are the basic tables and figures of the report and are not limited to the TOC.