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市場調查報告書
商品編碼
1519964
全球3D NAND快閃記憶體市場2024-2031Global 3D NAND Flash Memory Market 2024-2031 |
預計 3D NAND 快閃記憶體市場在預測期內(2024-2031 年)複合年成長率將達到 19.4%。 3D NAND 透過垂直堆疊單元來容納更多內存,從而提高智慧型手機和筆記型電腦等設備的儲存容量和效率。與舊技術相比,它具有更高的容量。它還具有更低的功耗和更好的耐用性,為未來資料儲存的進步鋪平了道路。全球數位化的不斷發展以及資料儲存需求的不斷成長推動了市場的成長。對製造設施的不斷成長的投資也對市場成長做出了積極貢獻。此外,隨著人工智慧(AI)和機器學習(ML)技術的採用,對大量資料處理的需求不斷增加,對3D NAND快閃儲存的需求將持續發展。
市場動態
Global 3D NAND Flash Memory Market Size, Share & Trends Analysis Report by Type (Single-level Cell, Multi-level Cell, and Triple-level Cell), by Application (Camera, Laptops and PCs, Smartphones & Tablets, and Others), and by End User (Automotive, Consumer Electronics, Enterprise, Healthcare, and Others) Forecast Period (2024-2031)
3D NAND flash memory market is anticipated to grow at a significant CAGR of 19.4% during the forecast period (2024-2031). 3D NAND crams more memory by stacking cells vertically, boosting storage capacity and efficiency in devices such as smartphones and laptops. It has higher capacity, compared to older tech. It also features lower power usage, and better durability, paving the way for future advancements in data storage. The market growth is driven by the rising digitization globally, and the increasing demand for data storage. The growing investments in fabrication facilities are also contributing positively towards market growth. Further, as the demand for massive data processing rises, attributed to the adoption of Artificial Intelligence (AI) and Machine Learning (ML) technologies, the demand for 3D NAND flash memory storage will continue to evolve.
Market Dynamics
3D NAND Flash Memory: A Solution to the Data Deluge of the Digital Age
The exponential growth of data generation in today's digital landscape drives the 3D NAND flash memory market. This surge arises from various sources, including high-resolution cameras in smartphones, larger applications, and multimedia file sizes on laptops, and expanding datasets in data centers. For instance, in January 2024, Google invested $1.0 billion in a new UK data center in Waltham Cross, Hertfordshire, to bolster technical infrastructure and support innovation. The 33-acre site will enhance computing capacity, benefiting businesses and Google Cloud customers across the UK and globally. 3D NAND flash memory significantly boosts storage density within the same footprint, enabling devices such as smartphones and laptops to store more data without sacrificing size. Data centers benefit from enhanced capacity, efficiently managing massive datasets to support cloud computing and big data analytics.
Enhanced Performance and Efficiency of 3D NAND Flash Memory
3D NAND flash memory offers significant performance and efficiency enhancements. Faster read and write speeds lead to smoother user experiences, while lower power consumption extends battery life for mobile devices and reduces energy costs for data centers. Moreover, increased endurance results in longer-lasting storage solutions, benefiting both users and manufacturers. Overall, the superior performance and efficiency of 3D NAND contribute to improved user experiences and operational efficiency.
Market Segmentation
The triple-level cell is anticipated to grow at the highest rate
Triple-Level Cell (TLC) emerges as the fastest-growing segment in the 3D NAND flash memory market due to its cost-effectiveness. For instance, in November 2022, Samsung Electronics announced the commencement of mass production for a 1-terabit (Tb) triple-level cell (TLC) eighth-generation Vertical NAND (V-NAND). This V-NAND has the highest bit density and storage capacity in the industry, facilitating larger storage space in next-generation enterprise server systems globally. Offering the highest storage capacity per cell compared to Single-Level Cell (SLC) and Multi-Level Cell (MLC), TLC technology provides a significant cost advantage for both consumers and manufacturers. Budget-conscious users benefit from affordable high-capacity devices such as smartphones and laptops, while manufacturers can produce competitive storage solutions catering to a broader market. This economic advantage, coupled with increasing demand for data storage, positions TLC at the forefront of market growth.
Smartphones & tablets segment to hold the largest market share
The 3D NAND flash memory market is anticipated to witness the smartphones & tablets segment emerge as its fastest-growing subsegment. The global popularity of smartphones and tablets continues to rise, fueled by advancements in functionality and our increasing reliance on these devices for various activities. For instance, in June 2023, Micron Technology, Inc. introduced its UFS 4.0 mobile solution, leveraging advanced 232-layer 3D NAND technology. The device offers capacities of up to 1TB, unparalleled performance for flagship smartphones, sequential read and write speeds of up to 4300 and 4000 Mbps, respectively. The solution enhances user experience with faster app launches, video downloads, and improved power efficiency, set for high-volume production in late 2023. Additionally, the trend toward capturing high-resolution photos and videos creates a constant demand for expanding storage capacities. Traditional solutions struggle to keep pace with the growing size of multimedia files. However, 3D NAND flash memory, with its superior storage density, offers a perfect solution.
The global 3D NAND flash memory is further segmented based on geography including North America (the US, and Canada), Europe (the UK, Italy, Spain, Germany, France, and the Rest of Europe), Asia-Pacific (India, China, Japan, South Korea, and Rest of Asia-Pacific), and the Rest of the World (the Middle East & Africa, and Latin America).
Asia Pacific holds the largest market share and is anticipated to grow in the future
The 3D NAND flash memory market is experiencing a geographical power shift, with Asia Pacific emerging as the leader. The regional market growth is attributed to the rapid economic growth that translates to increased IT spending, with businesses and governments investing heavily in data storage solutions. For instance, India ranks as the 13th largest data center market globally, with 138 data centers. By the end of 2025, an additional 45 data centers will be constructed, encompassing a total area of 13 million square feet with a capacity of 1,015 MW. In 2021, India's data center industry was valued at $ 4.4 billion, expecting a 132.0% growth to $ 10.1 billion by 2027. 3D NAND flash memory's superior density and efficiency make it the ideal choice for these growing demands. Additionally, government initiatives across the Asia Pacific actively promote digital transformation. These initiatives often involve significant investments in cloud computing and virtualization technologies, both heavily reliant on high-capacity storage solutions such as 3D NAND. Finally, Asia Pacific's position as a major hub for smartphone and electronics manufacturing further strengthens its dominance in the 3D NAND flash memory market. Since these devices rely heavily on 3D NAND for storage, the region's manufacturing strength fuels the regional market growth, also attributing to its largest share.
The major companies serving the global 3D NAND Flash Memory market include HP Inc., Intel Corporation, Samsung Electronics Co., Ltd., SK Hynix Semiconductor, Inc., and Toshiba Corporation, among others. The market players are increasingly focusing on business expansion and product development by applying strategies such as collaborations, mergers and acquisitions, product launches, to stay competitive in the market. For instance, in April 2024, Samsung Electronics plans to launch its 9th generation V-NAND with 290 layers, using a string stacking technique to enhance production efficiency. Despite expectations for over 300 layers, Samsung aims to optimize yields. Plans include a 430-layer 10th generation V-NAND in 2025. Competitors such as SK Hynix and YMTC are also advancing with higher layer counts.