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市場調查報告書
商品編碼
1625296
2030 年 3D NAND快閃記憶體快閃記憶體市場預測:按類型、外形規格、記憶體密度、應用、最終用戶和地區進行的全球分析3D Nand Flash Memory Market Forecasts to 2030 - Global Analysis By Type (Single-Level Cell, Multi-Level Cell, Triple-Level Cell and Quad-Level Cell), Form Factor, Memory Density, Application, End User and By Geography |
根據Stratistics MRC預測,2024年全球3D NAND快閃記憶體市場規模將達222億美元,預計2030年將達到570億美元,預測期內複合年成長率為17%。
3D NAND快閃記憶體是一種非揮發性儲存技術,可將資料儲存在 3D 儲存單元陣列中,與傳統 2D NAND 相比,可提供更高的儲存密度和改進的效能。此技術將儲存單元垂直堆疊成多層,並在不增加表面積的情況下增加儲存容量。廣泛應用於固態硬碟、記憶卡、智慧型手機和資料中心等應用。與傳統 NAND 技術相比,3D NAND 具有更快的資料存取速度、更低的功耗和更高的耐用性。
根據愛立信移動報告,預計到2024年終5G合約將佔北美移動合約的55%。
對儲存容量的需求不斷成長
3D NAND快閃記憶體快閃記憶體為傳統 2D NAND 技術的物理限制提供了解決方案,該技術受到矽晶圓上水平空間的限制。透過垂直堆疊儲存單元,3D NAND 增加了給定區域中的資料儲存容量。隨著對 SSD、智慧型手機和筆記型電腦等大容量設備的需求不斷成長,3D NAND 為製造商提供了生產更高容量儲存解決方案的可行解決方案,從而推動市場成長。
可靠性和耐用性問題
3D NAND快閃記憶體的壽命是有限的,以程式設計/擦除週期來衡量。儘管與 2D NAND 相比,耐用性有所提高,但由於儲存單元堆疊的增加,單元會隨著時間的推移而繼續劣化。對於高效能伺服器、資料中心和汽車系統等資料可靠性和耐用性至關重要的應用來說,壽命縮短是一個問題。此外,過早磨損可能導致資料損壞或遺失,從而降低該技術在這些領域的吸引力並阻礙市場發展。
從傳統硬碟 (HDD) 轉向固態硬碟 (SSD) 的轉變增多
由於 3D NAND 技術,SSD 提供比 HDD 更快的讀取/寫入速度。該技術透過減少延遲並在更小的區域儲存更多資料來提高資料傳輸速度。 3D NAND 對於高效能 SSD 至關重要,因為遊戲、影像製作、人工智慧和巨量資料分析等應用需要更快的儲存速度。 SSD 沒有活動部件,因此不易受到物理損壞且更耐用。隨著企業和消費者優先考慮可靠性,SSD 變得越來越受歡迎,從而增加了對基於 3D NAND 的儲存解決方案的需求。
與替代技術的競爭
3D XPoint 是一種由英特爾和美光開發的非揮發性記憶體技術,是 3D NAND 的潛在替代品,可提供更高的效能、更低的延遲和更高的耐用性。預計它將成為高效能儲存應用領域3D NAND的有力競爭對手。儘管仍處於採用的早期階段,3D XPoint 的速度和耐用性優勢使其成為資料中心和企業市場的強大競爭對手。一旦具有成本效益並被廣泛採用,3D XPoint 可以減少對 3D NAND 的需求。
COVID-19 的影響
COVID-19的疫情對3D NAND快閃記憶體市場產生了重大影響。供應鏈中斷,包括半導體短缺和工廠關閉,導致生產延誤和成本增加。然而,遠距工作、電子商務和數位服務的激增推動了資料儲存需求的增加,使市場受益。雲端運算、遊戲和人工智慧應用的擴展也推動了由 3D NAND 驅動的 SSD 的成長。
通用快閃記憶體儲存領域預計將在預測期內成為最大的領域
由於對高效能記憶體解決方案的需求,預計通用快閃記憶體儲存領域將在預測期內獲得最大的市場佔有率。最新版本Universal Flash Storage 2.1和Universal Flash Storage 3.1採用先進的NAND快閃記憶體技術(如3D NAND)以實現更快的讀寫速度。智慧型手機、平板電腦和筆記型電腦中擴大採用通用快閃記憶體儲存3.1,推動了對高速NAND 記憶體的需求,特別是滿足通用快閃儲存效能標準的3D NAND,從而增強了消費性電子產品中的3D NAND市場。
資料中心和雲端服務產業預計在預測期內複合年成長率最高
由於配備 3D NAND 的固態硬碟等先進儲存技術可實現快速資料搜尋、即時處理和高速資料傳輸,預計資料中心和雲端服務將在預測期內實現良好成長。與 HDD 等傳統儲存解決方案相比,3D NAND 提供更快的讀取/寫入速度、更低的延遲和更強的耐用性,使其成為雲端儲存和高效能運算應用的理想選擇,這正在加速 3D NAND快閃記憶體市場的成長。
北美尤其是美國是儲存技術創新中心,由英特爾、美光科技、西部數據等主要半導體廠商主導3D NAND快閃記憶體市場發展。這種創新領導力加速了 3D NAND快閃記憶體快閃記憶體的開發和採用,透過多級單元 (MLC)、三級單元 (TLC) 和四級單元 (QLC) 3D NAND 記憶體等開創性創新引領世界. 我們正在推動市場成長。
這是因為亞太地區的數位轉型正在推動對強大資料儲存解決方案的需求,特別是在雲端運算、巨量資料分析和基於人工智慧的應用程式方面。 3D NAND 等高效能儲存解決方案因其速度、可靠性和耐用性而非常適合這些服務。由於亞太地區雲端服務和資料中心的擴張,對 3D NAND 的需求不斷增加,推動了市場成長。
According to Stratistics MRC, the Global 3D Nand Flash Memory Market is accounted for $22.2 billion in 2024 and is expected to reach $57.0 billion by 2030 growing at a CAGR of 17% during the forecast period. 3D NAND Flash Memory is a non-volatile storage technology that stores data in a 3D array of memory cells, resulting in higher storage density and improved performance compared to traditional 2D NAND. This technology stacks memory cells vertically in multiple layers, increasing storage capacity without requiring more surface area. It is widely used in applications like solid-state drives, memory cards, smartphones, and data centers. 3D NAND offers faster data access speeds, lower power consumption, and higher durability compared to older NAND technologies.
According to the Ericsson Mobility report, in the North American region, 5G subscriptions are expected to account for 55% of mobile subscriptions by the end of 2024.
Increasing demand for storage capacity
3D NAND flash memory offers a solution to the physical limitations of traditional 2D NAND technology, which has limitations due to horizontal space constraints on silicon wafers. By stacking memory cells vertically, 3D NAND increases the storage capacity of data in a given area. As demand for high-capacity devices like SSDs, smartphones, and laptops increases, 3D NAND provides a viable solution for manufacturers to produce storage solutions with higher capacities boosting the market growth.
Reliability and durability concerns
3D NAND flash memory has a finite lifespan, measured in Program/Erase cycles. Despite its improved endurance over 2D NAND, the cells continue to degrade over time due to increased stacking of memory cells. This reduced lifespan is a concern for applications like high-performance servers, data centers, and automotive systems, where data reliability and endurance are crucial. Moreover premature wear can lead to data corruption or loss, undermining the technology's appeal in these sectors hampers the market.
Increasing shift from traditional hard disk drives (HDDs) to solid-state drives (SSDs)
SSDs offer faster read/write speeds compared to HDDs, thanks to 3D NAND technology. This technology reduces latency and stores more data in a smaller area, enhancing data transfer speeds. As applications like gaming, video production, AI, and big data analytics demand faster storage, 3D NAND is crucial for high-performance SSDs. SSDs also offer superior durability due to their lack of moving parts, making them less susceptible to physical damage. As businesses and consumers prioritize reliability, SSDs are increasingly preferred, boosting demand for 3D NAND-based storage solutions.
Competition from alternative technologies
3D XPoint, a non-volatile memory technology developed by Intel and Micron, is a potential alternative to 3D NAND, offering higher performance, lower latency, and greater endurance. It is seen as a strong competitor to 3D NAND in high-performance storage applications. Although still in its early stages of adoption, 3D XPoint's advantages in speed and endurance make it a strong competitor in the data center and enterprise markets. If more cost-effective and widely adopted, 3D XPoint could reduce demand for 3D NAND.
Covid-19 Impact
The COVID-19 pandemic significantly impacted the 3D NAND flash memory market. Supply chain disruptions, including semiconductor shortages and factory shutdowns, led to delays in production and increased costs. However, the surge in remote work, e-commerce, and digital services drove higher demand for data storage, benefiting the market. The expansion of cloud computing, gaming, and AI applications also fueled growth in SSDs powered by 3D NAND.
The universal flash storage segment is expected to be the largest during the forecast period
The universal flash storage segment is predicted to secure the largest market share throughout the forecast period owing to demand for high-performance memory solutions. The latest versions, universal flash storage 2.1 and universal flash storage 3.1, use advanced NAND flash technology like 3D NAND for faster read and write speeds. The growing adoption of universal flash storage 3.1 in smartphones, tablets, and laptops is boosting demand for high-speed NAND memory, particularly 3D NAND, which meets universal flash storage performance standards, strengthening the 3D NAND market in consumer electronics.
The data centers & cloud services segment is expected to have the highest CAGR during the forecast period
The data centers & cloud services is expected to register lucrative growth during the estimation period due to advanced storage technologies like solid-state drives powered by 3D NAND for rapid data retrieval, real-time processing, and high-speed data transfer. 3D NAND offers faster read/write speeds, lower latency, and enhanced durability compared to traditional storage solutions like HDDs, making it ideal for cloud storage and high-performance computing applications accelerating the growth of the 3D NAND flash memory market.
During the estimation period, the North America region is expected to capture the largest market share owing to North America, particularly the US, is a hub for innovation in storage technologies, with leading semiconductor manufacturers like Intel, Micron Technology, and Western Digital leading the development of 3D NAND flash memory. This leadership in technological innovation accelerates the development and adoption of 3D NAND flash memory, driving global market growth through pioneering innovations like multi-level cell (MLC), triple-level cell (TLC), and quad-level cell (QLC) 3D NAND memory.
Over the forecasted timeframe, the Asia Pacific is anticipated to exhibit the highest CAGR due to region's digital transformation is boosting the demand for robust data storage solutions, especially in cloud computing, big data analytics, and AI-based applications. High-performance storage solutions, such as 3D NAND, are well-suited for these services due to their speed, reliability, and endurance. The demand for 3D NAND is increasing due to the expansion of cloud services and data centers across APAC, fostering market growth.
Key players in the market
Some of the key players in 3D Nand Flash Memory market include Samsung Electronics Co.Ltd., Toshiba Corporation, SK Hynix Semiconductor Inc., Micron Technology Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd, Advanced Micro Devices, STMicroelectronics, SanDisk Corporation, Western Digital, VIA Technologies INC, Infineon Technologies AG, Microchip Technology Inc., ON Semiconductor, Integrated Silicon Solution Inc. and Realtek Semiconductor Corp.
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Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.