市場調查報告書
商品編碼
1475214
全球 IGBT 和晶閘管市場研究報告 - 2024 年至 2032 年行業分析、規模、佔有率、成長、趨勢和預測Global IGBTs and Thyristors Market Research Report - Industry Analysis, Size, Share, Growth, Trends and Forecast 2024 to 2032 |
全球 IGBT 和晶閘管市場需求預計將從 2023 年的 60.1 億美元增至 2032 年近 78.5 億美元,2024-2032 年研究期間複合年成長率為 3.01%。
IGBT(絕緣柵雙極電晶體)和晶閘管是電力電子中使用的半導體裝置,用於控制和調節馬達驅動、逆變器、轉換器、電源和電動車等各種應用中的電力。 IGBT 是能夠處理高電流和高電壓的高速開關元件,結合了 MOSFET 和雙極接面電晶體的優點。晶閘管或矽控整流器 (SCR) 是單向半導體開關,透過在施加特定觸發電壓時導通來控制電流,並保持導通狀態,直到電流降至特定閾值以下。
對節能電源轉換和控制解決方案日益成長的需求推動了對 IGBT 和晶閘管作為電力電子、馬達驅動、再生能源逆變器、工業自動化和電動車推進系統中關鍵組件的需求。隨著向風能、太陽能和電動車等永續能源的過渡,對能夠處理高電壓、電流和溫度,同時提供高效、可靠性能的功率半導體裝置的需求不斷成長。此外,電動和混合動力車的日益普及推動了牽引逆變器、車載充電器和電池管理系統中對 IGBT 和晶閘管的需求,從而在汽車應用中實現高效的功率轉換和能源管理。此外,半導體技術的進步使得IGBT和閘流管的開發具有更高的功率密度、更快的開關速度和更好的熱性能,滿足電力電子和電力傳輸中新興應用的要求。
此外,對電網現代化、智慧電網和再生能源併網的日益重視推動了電網基礎設施、儲能系統和電壓調節設備的市場成長,支持向更永續和更有彈性的能源未來過渡。隨著電力電子系統的複雜性不斷增加,以及電動車、再生能源和工業自動化市場的不斷擴大,對高性能晶閘管和IGBT 的需求不斷成長,這些晶閘管和IGBT 可以提供更高的效率、可靠性和功能,以滿足不斷變化的需求。然而,供應鏈中斷、貿易緊張和地緣政治不確定性可能會挑戰未來幾年的市場成長。
研究報告涵蓋波特五力模型、市場吸引力分析和價值鏈分析。這些工具有助於清晰地了解行業結構並評估全球範圍內的競爭吸引力。此外,這些工具還對全球 igbts 和晶閘管市場的各個細分市場進行了包容性評估。 IGBT 和晶閘管產業的成長和趨勢為本研究提供了整體方法。
igbts 和晶閘管市場報告的這一部分提供了國家和區域級別細分市場的詳細資料,從而幫助策略師確定相應產品或服務的目標人口統計數據以及即將到來的機會。
本節涵蓋區域前景,重點介紹北美、歐洲、亞太地區、拉丁美洲以及中東和非洲 IGBT 和晶閘管市場當前和未來的需求。此外,該報告重點關注所有主要地區各個應用領域的需求、估計和預測。
該研究報告還涵蓋了市場主要參與者的全面概況以及對全球競爭格局的深入了解。 IGBT 和晶閘管市場的主要參與者包括瑞薩電子公司、塞米控丹佛斯、Diodes 公司、Dynex 半導體有限公司、英飛凌科技股份公司、日立能源有限公司、富士電機有限公司。策略發展,例如關鍵併購、未來產能、合作夥伴關係、財務概況、合作、新產品開發、新產品發布和其他發展。
如果您有任何客製化要求,請寫信給我們。我們的研究團隊可以根據您的需求提供客製化報告。
The global demand for IGBTs and Thyristors Market is presumed to reach the market size of nearly USD 7.85 Billion by 2032 from USD 6.01 Billion in 2023 with a CAGR of 3.01% under the study period 2024 - 2032.
IGBTs (Insulated Gate Bipolar Transistors) and thyristors are semiconductor devices used in power electronics to control and regulate electrical power in various applications such as motor drives, inverters, converters, power supplies, and electric vehicles. IGBTs are high-speed switching devices capable of handling high currents and voltages, combining the advantages of MOSFETs and bipolar junction transistors. Thyristors, or silicon-controlled rectifiers (SCRs), are unidirectional semiconductor switches that control the current flow by turning on when a specific trigger voltage is applied and remain conducting until the current drops below a certain threshold.
The growing need for energy-efficient power conversion and control solutions drives the demand for IGBTs and thyristors as key components in power electronics, motor drives, renewable energy inverters, industrial automation, and electric vehicle propulsion systems. With the transition towards sustainable energy sources such as wind, solar, and electric vehicles, there is a growing demand for power semiconductor devices capable of handling high voltages, currents, and temperatures while delivering efficient and reliable performance. Additionally, the rising adoption of electric & hybrid electric vehicles drives the demand for IGBTs and thyristors in traction inverters, onboard chargers, and battery management systems, enabling efficient power conversion and energy management in automotive applications. Moreover, advancements in semiconductor technology allow the development of IGBTs and thyristors with higher power density, faster switching speeds, and improved thermal performance, meeting the requirements of emerging applications in power electronics and electric power transmission.
Furthermore, the growing emphasis on grid modernization, smart grids, and renewable energy integration drives the market growth in power grid infrastructure, energy storage systems, and voltage regulation devices, supporting the transition towards a more sustainable and resilient energy future. With the increasing complexity of power electronics systems and the expanding market for electric vehicles, renewable energy, and industrial automation, there is a growing demand for high-performance thyristors and IGBTs that offer enhanced efficiency, reliability, and functionality to meet the evolving needs of customers and industries. However, supply chain disruptions, trade tensions, and geopolitical uncertainties may challenge the market growth in the coming years.
The research report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of igbts and thyristors. The growth and trends of igbts and thyristors industry provide a holistic approach to this study.
This section of the igbts and thyristors market report provides detailed data on the segments at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
This section covers the regional outlook, which accentuates current and future demand for the IGBTs and Thyristors market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the IGBTs and Thyristors market include Renesas Electronics Corporation, Semikron Danfoss, Diodes Incorporated, Dynex Semiconductor Ltd., Infineon Technologies AG, Hitachi Energy Ltd., Fuji Electric Co., Ltd. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
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