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3-D TSV：關鍵問題洞察與市場分析
市場調查報告書
商品編碼
1473281

3-D TSV：關鍵問題洞察與市場分析

3-D TSV: Insight On Critical Issues and Market Analyses
出版日期: | 出版商: Information Network | 英文 | 商品交期: 2-3個工作天內

價格

介紹

在電子設備對更高運算能力和效率不斷增長的需求的推動下，半導體產業的 TSV 先進封裝領域目前正在快速發展和擴張。以下是一些關鍵方面和見解：

先進封裝的創新： RDL（再分佈層）、TSV（矽通孔）、凸塊技術和混合鍵結處於先進封裝技術的前沿。兩者都透過提高連接效率和降低功耗來提升晶片性能，發揮重要作用。

這些技術解決了傳統小型化方法的物理限制，特別是量子隧道技術。由於研發成本高、良率低，進一步小型化並不現實。

對運算能力的影響：先進封裝透過增加處理器密度以及進程記憶體連接的頻寬和效率來顯著提高運算能力。這對於克服 "記憶體牆" 和 "功耗牆" 以及實現人工智慧和機器學習模型等更先進的運算應用至關重要。

需求和供應動態：對先進封裝的需求超過了供應，部分原因是人工智慧應用的運算需求爆炸性成長。英偉達和台積電等大公司正努力滿足這項需求，產能出現嚴重瓶頸。

這種供應短缺凸顯了擴大先進封裝產能以跟上技術進步和市場需求的迫切需求。

市場壁壘和行業趨勢：由於製造過程的複雜性和精度要求，先進封裝市場的進入障礙很高，有利於擁有全面製造和設計能力的現有公司。

全球領導企業都在擴張產能，但都面臨擴張週期長、設備短缺的課題。這種情況為各地區的國內企業加快發展、擴大潛力、擴大市場佔有率提供了機會。

未來展望：持續努力擴大產能、積極研發新材料和新技術對於半導體產業未來的成長至關重要。

國內企業，尤其是政府對半導體產業大力支持的地區的企業，擁有獨特的機會，可以利用當前的市場動態進行 "國產替代" 並減少對國際供應商的依賴。

關於本報告

本報告全面回顧了半導體封裝中 TSV(Through-Silicon Via)開發和部署的核心技術趨勢，並著重於 3D 和 2.5D TSV 技術的關鍵作用。本報告特別詳細介紹了採用 3D 和 2.5D TSV 的先進封裝解決方案，例如Chip-on-Wafer-on-Substrate (CoWoS) 和 Feveros。

這些先進的封裝技術正在突破半導體性能和效率的極限。例如，CoWoS透過垂直堆疊不同類型的晶片實現密集集成，顯著提高效能並降低功耗。這對於需要高運算能力的應用領域尤其有利，例如資料中心和人工智慧處理。

本報告深入探討了這些技術如何應對關鍵的產業課題，例如更高的頻寬、更低的延遲和更低的能耗。我們也強調了這些先進封裝技術的戰略重要性，以克服傳統縮放定律的局限性，並使半導體元件依照摩爾定律持續發展。

此外，我們還分析了市場概況，該概況反映了 HPC（高效能運算）、消費性電子產品和汽車系統應用中對 3D 和 2.5D TSV 解決方案不斷增長的需求。本報告重點介紹了競爭格局，並重點介紹了行業領導者為利用這些新商機而採取的技術進步和策略。

目錄

第一章簡介

第二章 關鍵問題的見解

  • 3D TSV 驅動因素
  • 使用 TSV 的 3D IC 的優點
  • 對經濟高效的 3D 晶片堆疊技術的要求
  • TSV 技術的課題
  • TSV 供應鏈課題
  • 3D封裝技術的局限性
    • 熱管理
    • 成本
    • 設計複雜性
    • 交貨時間

第三章成本結構

  • 3D晶片堆疊成本結構
  • 擁有成本

第四章 重要加工技術

  • 介紹
  • 鍍銅
  • 光刻
    • 光學光刻
    • 壓印光刻
    • 抗蝕劑塗層
  • 等離子蝕刻技術
  • 剝離/清洗
  • 薄晶圓鍵合
  • 晶圓減薄/CMP
  • 堆疊
  • 測量/檢查

第五章 重要發展板塊評價

  • 介紹
  • 透過優先
    • 設備要求
    • 材料要求
  • 中孔
    • 設備要求
    • 材料要求
  • 最後通孔
    • 設備要求
    • 材料要求
  • 中介層

第六章 入局企業概況

  • 晶片製造商/封裝商/服務
  • 設備供應商
  • 材料供應商
  • 研究與開發

第七章市場分析

  • TSV 設備路線圖
  • TSV設備預測
  • 設備預測
  • 材料預測

Introduction

The TSV advanced packaging sector of the semiconductor industry is currently undergoing rapid evolution and expansion, driven by the increasing demand for higher computing power and efficiency in electronic devices. Here are some critical insights and implications based on the information provided:

Technological Innovations in Advanced Packaging: Redistribution Layer (RDL), Through-Silicon Via (TSV), Bump Technology, and Hybrid Bonding are at the forefront of advanced packaging technologies. Each plays a crucial role in enhancing chip performance by improving connection efficiency and reducing power consumption.

These technologies address the physical limitations encountered with traditional scaling methods, notably the quantum tunneling effect, which makes further miniaturization impractical due to high R&D costs and low yield rates.

Impact on Computing Power: Advanced packaging significantly boosts computing power by increasing processor integration and enhancing the bandwidth and efficiency of processormemory connections. This is critical for overcoming the "memory wall" and "power consumption wall," enabling more sophisticated computing applications, including AI and machine learning models.

Supply and Demand Dynamics: The demand for advanced packaging is outstripping supply, partly due to the explosive growth in computing requirements for AI applications. Leading companies like Nvidia and TSMC are struggling to meet this demand, indicating a significant bottleneck in production capacity.

This supply shortage highlights the urgency for expanding advanced packaging capabilities to keep pace with technological advancements and market needs.

Market Barriers and Industry Dynamics: The high barriers to entry in the advanced packaging market, due to the complexity and precision required in manufacturing processes, favor established players with comprehensive fabrication and design capabilities.

While leading global companies are expanding their capacities, the lengthy expansion cycle and equipment shortages present challenges. This situation opens opportunities for domestic companies in various regions to accelerate their development and potentially gain market share.

Future Outlook: The ongoing efforts to expand production capabilities and the active R&D in new materials and techniques are essential for the future growth of the semiconductor industry.

Domestic companies, especially in regions with strong government support for the semiconductor industry, have a unique opportunity to leverage the current market dynamics for "domestic substitution" and reduce reliance on international suppliers.

About This Report

This 175-page report covers the following:

The "3-D TSV: Insight On Critical Issues and Market Analysis" report covers a comprehensive examination of technology trends that are central to the development and deployment of Through-Silicon Via (TSV) in semiconductor packaging, focusing on the pivotal role of 3D and 2.5D TSV technologies. A key highlight of the report is the detailed exploration of advanced packaging solutions that incorporate 3D or 2.5D TSV, such as Chip-on-Wafer-on-Substrate (CoWoS) and Feveros.

These advanced packaging technologies are pushing the boundaries of semiconductor performance and efficiency. CoWoS, for instance, enables high-density integration of heterogeneous chips by stacking them vertically, significantly improving performance and reducing power consumption. This is particularly beneficial for applications requiring high computational power, like data centers and AI processing. Feveros, although not detailed in your initial information, can be inferred as another innovative packaging solution leveraging 3D or 2.5D TSV technologies to meet the growing demands for faster, more efficient computing across various sectors.

The report delves into how these technologies address critical industry challenges, including the need for greater bandwidth, reduced latency, and lower energy consumption. It emphasizes the strategic importance of these advanced packaging methods in overcoming the limitations of traditional scaling laws, thus enabling the continued evolution of semiconductor devices in line with Moore's Law.

Moreover, the analysis presents a market overview that reflects the growing demand for 3D and 2.5D TSV solutions, driven by their application in high-performance computing, consumer electronics, and automotive systems. The report underscores the competitive landscape, highlighting the technological advancements and strategies employed by key industry players to capitalize on these emerging opportunities.

Table of Contents

Chapter 1. Introduction

Chapter 2. Insight Into Critical Issues

  • 2.1. Driving Forces In 3-D TSV
  • 2.2. Benefits of 3-D ICs With TSVs
  • 2.3. Requirements For A Cost Effective 3-D Die Stacking Technology
  • 2.4. TSV Technology Challenges
  • 2.5. TSV Supply Chain Challenge
  • 2.6. Limitations of 3-D Packaging Technology
    • 2.6.1. Thermal Management
    • 2.6.2. Cost
    • 2.6.3. Design Complexity
    • 2.6.4. Time to Delivery

Chapter 3. Cost Structure

  • 3.1. Cost Structure of 3-D chip Stacks
  • 3.2. Cost of Ownership

Chapter 4. Critical Processing Technologies

  • 4.1. Introduction
  • 4.2. Cu Plating
  • 4.3. Lithography
    • 4.3.1. Optical Lithography
    • 4.3.2. Imprint Lithography
    • 4.3.3. Resist Coat
  • 4.4. Plasma Etch Technology
  • 4.5. Stripping/Cleaning
  • 4.6. Thin Wafer Bonding
  • 4.7. Wafer Thinning/CMP
  • 4.8. Stacking
  • 4.9. Metrology/Inspection

Chapter 5. Evaluation Of Critical Development Segments

  • 5.1. Introduction
  • 5.2. Via-first
    • 5.2.1. Equipment Requirements
    • 5.2.2. Material Requirements
  • 5.3. Via-Middle
    • 5.3.1. Equipment Requirements
    • 5.3.2. Material Requirements
  • 5.4. Via-Last
    • 5.4.1. Equipment Requirements
    • 5.4.2. Material Requirements
  • 5.5. Interposers

Chapter 6. Profiles Of Participants

  • 6.1. Chip Manufacturers/Packaging Houses/Services
  • 6.2. Equipment Suppliers
  • 6.3. Material Suppliers
  • 6.4. R&D

Chapter 7. Market Analysis

  • 7.1. TSV Device Roadmap
  • 7.2. TSV Device Forecast
  • 7.3. Equipment Forecast
  • 7.4. Material Forecast

List of Tables

  • 1.1. 3-D Mass Memory Volume Comparison Between Other Technologies And TI's 3-D Technology
  • 1.2. 3-D Mass Memory Weight Comparison Between Other Technologies And TI's 3-D Technology
  • 3.1. Cost Of Ownership Comparison
  • 4.1. Via Middle Metrology/Inspection Requirements
  • 4.2. Via Last Metrology/Inspection Requirements
  • 7.1. Forecast Of TSV Devices By Units
  • 7.2. Forecast Of TSV Devices By Wafers
  • 7.3. Forecast Of TSV Equipment by Type

List of Figures

  • 1.1. 3-D Technology On Dram Density
  • 1.2. 3-D Through-Silicon Via (TSV)
  • 1.3. Graphical Illustration Of The Silicon Efficiency Between MCMs And 3-D Technology
  • 1.4. Silicon Efficiency Comparison Between 3D Packaging Technology and Other Conventional Packaging Technologies
  • 2.1. TSV Fabrication Process Challenges
  • 2.2. TSV Fabrication Process Challenge - Cu Protrusion
  • 2.3. TSV Reliability Challenges
  • 2.4. Via Middle Process Integration Challenges
  • 2.5. Via Middle Process Integration Challenges
  • 3.1. Cost Structure of D2W and W2W
  • 3.2. Assembly Cost Analysis
  • 3.2. Cost Structure Of Different Vias And Tools
  • 3.3. Cost Of Ownership For 5 X 50 TSV VIA Middle
  • 3.4. Cost Of CMP For TSV VIA Middle Process
  • 3.5. Cost Of Ownership For 10 X 100 TSV Via Middle
  • 3.6. Cost Structure Of TSVs 5 X 50 micrometerm
  • 3.7. Interposer TSV: Upscaling To 10 X 100 micrometerm
  • 3.8. TSV Downscaling To 3x50 micrometerm
  • 3.9. Cost Structure Of Different Vias And Tools
  • 3.10. Via First Cost Of Ownership
  • 3.11. Via First Cost Of Ownership Front And Back Side
  • 3.12. Via First Process Flow
  • 3.13. iTSV Versus pTSV Cost Of Ownership
  • 3.14. Effect Of TSV Depth And Diameter On Cost
  • 4.1. Illustration Of Bosch Process
  • 4.2. Key Via Middle TSV Process Steps
  • 4.3. Key Last TSC Process Steps
  • 5.1. VIA First, Middle, And Last Process Flows
  • 5,2. VIA First TSV Process Flow
  • 5.3. VIA Middle TSV Process Flow
  • 5.4. Soft Reveal Process
  • 5.5. VIA Last TSV Process Flow
  • 5.6. Comparison Between 2.5D And 3D
  • 5.7. TSV Interposer Cross Sectional Schematic With RDL Layer
  • 5.8. Process Flow For RDL And UBM
  • 7.1. Leading Edge TSV Roadmap
  • 7.2. Forecast Of TSV Devices By Units
  • 7.3. Forecast Of TSV Devices By Wafers
  • 7.4. Forecast Of TSV Equipment by Type
  • 7.5. Forecast Of TSV Materials