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1548610

GaN半導體裝置：市場佔有率分析、產業趨勢/統計、成長預測（2024-2029）

GaN Semiconductor Devices - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2024 - 2029)
出版日期: | 出版商: Mordor Intelligence | 英文 164 Pages | 商品交期: 2-3個工作天內

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簡介目錄

預計2024年全球GaN半導體元件市場規模將達43.4億美元，2024-2029年預測期間複合年成長率為21.64%，2029年將達到115.7億美元。

GaN半導體裝置市場

主要亮點

  • 對太陽能和風能等可再生能源不斷成長的需求正在推動 GaN 半導體元件在電力轉換系統中的使用。 GaN 的高功率密度、快速開關速度和改進的熱性能可實現高效的能量轉換，減少能源浪費並提高整體系統效率。
  • 太陽能是綠色能源領域成長最快的領域之一。太陽能電池板由多個分離式半導體組成，透過光伏效應將陽光轉化為電能。由於政府激勵措施和成本下降等因素，太陽能需求不斷成長，導致太陽能板生產和安裝激增。因此，對使這些面板高效工作所需的離散半導體的需求不斷增加。
  • GaN 能夠在高頻下工作、承受惡劣的環境條件並提供高功率，使其適合雷達系統、電子戰和通訊系統等應用。 GaN 裝置透過提高性能、可靠性和減小系統尺寸，為航太和國防技術的進步做出貢獻。
  • 然而，與氮化鎵半導體裝置相關的高成本是所研究的市場成長的主要限制。這些設備的製造過程需要複雜的製造技術和專用設備，這提高了整體成本。因此，與其他半導體材料相比，氮化鎵半導體裝置相對昂貴，限制了其在價格敏感市場的採用。
  • 在後新冠疫情背景下，遠距工作環境將導致超大規模資料中心的成長，從而增加對智慧型手機、穿戴式裝置、筆記型電腦和其他 IT 裝置的需求。
  • 根據印度國家軟體和服務公司協會（NASSCOM）預測，到 2025 年，印度資料中心投資預計將達到 46 億美元。與新興市場相比，印度資料中心的最大優勢在於無論是市場開拓或營運都具有成本效益。目前，印度的資料中心主要位於孟買、班加羅爾、清奈、德里（NCR）、海得拉巴和普納。加爾各答、喀拉拉邦和艾哈默德巴德將成為未來的資料中心地點。資料中心市場投資的擴大正在推動受訪市場的成長。

氮化鎵（GaN）半導體裝置市場趨勢

家電佔較大市場佔有率

  • 氮化鎵 (GaN) 半導體正在成為消費性電子產業的重要組件。由於其獨特的性能，這些半導體在電力電子領域迅速普及。與傳統的矽基元件相比，GaN 半導體具有高擊穿電壓和低導通電阻。
  • 與傳統的矽基半導體相比，GaN 半導體由於其高電子遷移率和寬頻能隙而表現出較低的功率損耗。在智慧型手機中，基於 GaN 的電源管理晶片可實現更快的充電、更長的電池壽命和更低的發熱量。同樣，GaN 半導體可以提高筆記型電腦中的功率轉換效率，從而延長電池壽命並減輕設備重量。
  • 智慧型手機的日益普及也推動了受訪市場的成長。根據愛立信預測，到2023年，全球智慧型手機行動網路用戶數量將達到近70億人。預計到2028年將超過77億。印度、中國和美國的智慧型手機行動網路訂閱數量最多。
  • 氮化鎵半導體在高頻應用中表現出優異的性能，使其適合現代電子設備不斷成長的需求。在智慧型手機中，基於 GaN 的射頻 (RF) 放大器可提高訊號質量，從而提高通話清晰度和資料傳輸速度。在筆記型電腦中，基於 GaN 的功率放大器可實現高速無線連接並提高整體性能。此外，在消費性穿戴產品中，GaN 半導體可促進穩定的無線通訊並實現先進的感測器整合。

中國正在實現令人矚目的成長

  • 近幾十年來，中國已成為半導體及相關產品的主要製造商和使用者。中國半導體晶片需求的快速成長很大程度上得益於數位環境的快速擴張。此外，政府項目也有助於中國更多地採用數位技術。其中之一是“中國製造2025”，旨在鼓勵機器人、物聯網、自動化、人工智慧、AR/VR和ML等先進ICT解決方案融入工業領域。
  • 該國GaN半導體市場的成長也受到智慧型手機、智慧電視、筆記型電腦、平板電腦、消費性電子產品等日益普及的影響。由於材料的成本和效率優勢，消費領域一直是OEM採用 GaN 的主要力量，而這一趨勢預計將持續有增無減。 GaN 使智慧型手機製造商能夠生產體積小且具有良好性價比的充電器。
  • 中國也是汽車生產大國，正在加大對汽車產業的投資，以提高其市場地位。因此，中國政府最近取消了對外國投資的各種限制，以鼓勵國內汽車製造。
  • 此外，由於消費者可支配收入的增加，對豪華汽車的需求不斷增加，因為這些汽車中安裝的電子和控制單元的數量將會增加，從而推動了對GaN 半導體的需求，創造了良好的市場成長前景。例如，根據中國汽車工業工業（CAAM）的數據，2023年12月中國汽車產量將為每月227.3萬輛乘用車和31萬輛商用車。

氮化鎵（GaN）半導體裝置產業概況

GaN半導體裝置市場正走向半固體。市場的主要企業包括東芝電子元件及儲存裝置株式會社、Nexperia Holding BV（聞泰科技）、英飛凌科技股份公司、Efficient Power Conversion Corporation 和 NXP Semiconductors NV。公司正在透過建立多個合作夥伴關係和投資新產品發布來擴大市場佔有率，以在預測期內獲得競爭優勢。

  • 2024 年 6 月 - 英飛凌科技股份公司推出 CoolGaNTransistor 700 V G4 產品系列。這些元件在功率轉換方面表現出色，尤其是在 700 V 電壓範圍內。這些電晶體的輸入/輸出比性能提高了 20%。這種增強可以提高效率、最小化功率損耗並提供更經濟的解決方案。這些應用範圍從消費性充電器和筆記型電腦適配器到資料中心電源、可再生能源逆變器和電池儲存解決方案。
  • 2024 年 5 月 - 東芝電子元件及儲存裝置株式會社在石川縣加賀東芝電子株式會社（東芝的主要集團公司）舉行了功率半導體 300 毫米晶圓製造工廠和辦公大樓的竣工儀式。此次完成標誌著東芝多年投資計畫第一階段的重要里程碑。我們將在2024會計年度下半年進行設備安裝並開始量產。

其他好處

  • Excel 格式的市場預測 (ME) 表
  • 3 個月分析師支持

目錄

第1章簡介

  • 研究假設和市場定義
  • 調查範圍

第2章調查方法

第3章執行摘要

第4章市場洞察

  • 市場概況
  • 產業吸引力－波特五力分析
    • 供應商的議價能力
    • 消費者議價能力
    • 新進入者的威脅
    • 替代品的威脅
    • 競爭公司之間的敵對關係
  • COVID-19 和其他宏觀經濟因素對市場的影響

第5章市場動態

  • 市場促進因素
    • 5G實施進展帶動通訊基礎建設產業需求旺盛
    • 高性能和小外形規格等優勢特性推動了軍事領域的採用
  • 市場限制因素
    • 成本和營運挑戰

第6章 市場細分

  • 按類型
    • 功率半導體
    • 光電半導體
    • 射頻半導體
  • 按設備
    • 電晶體
    • 二極體
    • 整流器
    • 電源IC
  • 按最終用戶產業
    • 車
    • 家電
    • 航太/國防
    • 醫療保健
    • 資訊通訊/技術
    • 其他最終用戶產業
  • 按地區
    • 美國
    • 歐洲
    • 日本
    • 中國
    • 韓國
    • 台灣
    • 拉丁美洲
    • 中東/非洲

第7章 競爭格局

  • 公司簡介
    • Toshiba Electronic Devices & Storage Corporation
    • Nexperia Holding BV（Wingtech Technology Co. Ltd）
    • Infineon Technologies AG
    • Efficient Power Conversion Corporation
    • NXP Semiconductors NV
    • Texas Instruments Incorporated
    • MACOM Technologies Solutions Holdings Inc.
    • STMicroelectronics NV
    • Microchip Technology Inc.
    • Soitec
    • Qorvo Inc.
    • ROHM Co. Ltd

第8章投資分析

第9章市場的未來

簡介目錄
Product Code: 51609

The GaN Semiconductor Devices Market size is estimated at USD 4.34 billion in 2024, and is expected to reach USD 11.57 billion by 2029, growing at a CAGR of 21.64% during the forecast period (2024-2029).

GaN Semiconductor Devices - Market

Key Highlights

  • The escalating demand for renewable energy sources, including solar and wind power, has propelled the use of GaN semiconductor devices in power conversion systems. GaN's high-power density, fast switching speeds, and improved thermal performance enable efficient energy conversion, reducing energy wastage and increasing overall system efficiency.
  • Solar power is one of the fastest-growing segments in the green energy sector. Solar panels, which consist of multiple discrete semiconductors, transform sunlight into electricity through the photovoltaic effect. The rising demand for solar energy, driven by factors such as government incentives and falling costs, has led to a surge in the production and installation of solar panels. This, in turn, has fueled the demand for discrete semiconductors required for the efficient functioning of these panels.
  • GaN's ability to operate at high frequencies, withstand harsh environmental conditions, and deliver high power outputs makes it suitable for applications such as radar systems, electronic warfare, and communication systems. GaN devices offer improved performance, reliability, and reduced system size, contributing to advancements in aerospace and defense technologies.
  • However, the high cost associated with gallium nitride semiconductor devices acts as a significant restraint to the growth of the studied market. The production process of these devices requires complex manufacturing techniques and specialized equipment, which adds to the overall cost. This makes gallium nitride semiconductor devices relatively expensive compared to other semiconductor materials, limiting their adoption in price-sensitive markets.
  • The remote working environment, in the post-COVID scenario, is leading to the growth in hyper-scale data centers and increased demand for smartphones, wearables, laptops, and other IT equipment, creating a need for memory chips and resulting in increased demand for the market studied.
  • As per the the National Association of Software and Service Companies (NASSCOM), India's data center investment is slated to reach USD 4.6 billion by 2025. India's higher cost efficiency in both development and operation is its most significant advantage compared to more mature markets. Currently, India's data centers are primarily located in Mumbai, Bengaluru, Chennai, Delhi (NCR), Hyderabad, and Pune. Calcutta, Kerala, and Ahmedabad are the upcoming data center hubs. These growing data center market investments drive the growth of the market studied.

Gallium Nitride (GaN) Semiconductor Devices Market Trends

Consumer Electronics to Hold Significant Market Share

  • Gallium nitride (GaN) semiconductors have emerged as crucial components in the consumer electronics industry. Due to their unique properties, these semiconductors have rapidly gained popularity in power electronics. Compared to traditional silicon-based devices, GaN semiconductors offer higher breakdown voltage and lower on-resistance.
  • Compared to traditional silicon-based semiconductors, GaN semiconductors exhibit lower power losses due to their higher electron mobility and wider bandgap. In smartphones, GaN-based power management chips enable faster charging, longer battery life, and reduced heat generation. Similarly, GaN semiconductors allow for more efficient power conversion in laptops, resulting in extended battery life and reduced device weight.
  • The increasing penetration of smartphones is likely to aid the growth of the studied market. According to Ericsson, in 2023, the number of smartphone mobile network subscriptions worldwide reached almost seven billion. It is expected to exceed 7.7 billion by 2028. India, China, and the United States have the highest number of smartphone mobile network subscriptions.
  • GaN semiconductors perform well in high-frequency applications, making them suitable for the ever-increasing demands of modern electronic devices. In smartphones, GaN-based radio frequency (RF) amplifiers enhance signal quality, leading to improved call clarity and faster data transfer rates. In laptops, GaN-based power amplifiers enable high-speed wireless connectivity and enhance overall performance. Furthermore, in consumer wearables, GaN semiconductors facilitate stable wireless communication and enable the integration of advanced sensors.

China to Witness Significant Growth

  • China has emerged as the leading manufacturer and user of semiconductors and associated goods in recent decades. The surge in demand for semiconductor chips in China is largely due to the rapid expansion of the digital environment. In addition, government programs contribute to the increased adoption of digital technologies in China. One such initiative is "Made in China 2025," which aims to encourage the integration of advanced technologies like robotics, IoT, automation, and advanced ICT solutions such as AI, AR/VR, and ML in the industrial sector.
  • The growth of the country's GaN semiconductor market is also influenced by the rising popularity of smartphones, smart TVs, laptops, tablets, home appliances, etc. The consumer sector has been the primary force behind GaN adoption by OEMs due to the material's cost and efficiency advantages, and this trend is anticipated to continue without deceleration. GaN enables smartphone manufacturers to produce chargers with reduced dimensions and a better price-to-power ratio.
  • China is also known as a leading producer of motor vehicles and is expanding its investment in the automotive industry to enhance its market position. As a result, the Chinese government has recently lifted various restrictions on foreign investment to promote automotive manufacturing within the nation.
  • Moreover, the growing demand for luxury vehicles owing to the rising disposable income of the consumers is creating a favorable outlook for the studied market's growth as more electronic and control units feature in these vehicles, which drives the demand for GaN semiconductors. For instance, according to the China Association of Automobile Manufacturers (CAAM), in December 2023, monthly automobile production in China stood at 2,273 thousand units of passenger vehicles and 310 thousand units of commercial vehicles.

Gallium Nitride (GaN) Semiconductor Devices Industry Overview

The GaN semiconductor devices market is semi-consolidated. Some of the significant players in the market are Toshiba Electronic Devices & Storage Corporation, Nexperia Holding BV (Wingtech Technology Co. Ltd), Infineon Technologies AG, Efficient Power Conversion Corporation, NXP Semiconductors NV, and many more. The companies are increasing their market share by forming multiple partnerships and investing in introducing new products to earn a competitive edge during the forecast period.

  • June 2024 - Infineon Technologies AG introduced the CoolGaNTransistor 700 V G4 product family. These devices excel in power conversion, specifically in the 700 V voltage range. These transistors boast a 20% performance boost in input and output figures-of-merit. This enhancement translates to heightened efficiency, minimized power losses, and more economical solutions. These applications span from consumer chargers and notebook adapters to data center power supplies, renewable energy inverters, and battery storage solutions.
  • May 2024 - Toshiba Electronic Devices & Storage Corporation held a ceremony to mark the completion of a new 300-millimeter wafer fabrication facility for power semiconductors and an office building at Kaga Toshiba Electronics Corporation in Ishikawa Prefecture, Japan, one of Toshiba's key group companies. Completing construction is a significant milestone for Phase 1 of Toshiba's multi-year investment program. Toshiba will now proceed with equipment installation and start mass production in the second half of the fiscal year 2024.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

  • 4.1 Market Overview
  • 4.2 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.2.1 Bargaining Power of Suppliers
    • 4.2.2 Bargaining Power of Consumers
    • 4.2.3 Threat of New Entrants
    • 4.2.4 Threat of Substitutes
    • 4.2.5 Intensity of Competitive Rivalry
  • 4.3 Impact of COVID-19 Aftereffects and Other Macroeconomic Factors on the Market

5 MARKET DYNAMICS

  • 5.1 Market Drivers
    • 5.1.1 Strong Demand from Telecom Infrastructure Segment Driven by Advancements in 5G Implementation
    • 5.1.2 Favorable Attributes Such As High-performance and Small Form Factor to Drive Adoption in the Military Segment
  • 5.2 Market Restraint
    • 5.2.1 Cost & Operational Challenges

6 MARKET SEGMENTATION

  • 6.1 By Type
    • 6.1.1 Power Semiconductors
    • 6.1.2 Opto-Semiconductors
    • 6.1.3 RF Semiconductors
  • 6.2 By Devices
    • 6.2.1 Transistors
    • 6.2.2 Diodes
    • 6.2.3 Rectifiers
    • 6.2.4 Power ICs
  • 6.3 By End-user Industry
    • 6.3.1 Automotive
    • 6.3.2 Consumer Electronics
    • 6.3.3 Aerospace and Defense
    • 6.3.4 Medical
    • 6.3.5 Information Communication and Technology
    • 6.3.6 Other End-user Industries
  • 6.4 By Geography
    • 6.4.1 United States
    • 6.4.2 Europe
    • 6.4.3 Japan
    • 6.4.4 China
    • 6.4.5 Korea
    • 6.4.6 Taiwan
    • 6.4.7 Latin America
    • 6.4.8 Middle East and Africa

7 COMPETITIVE LANDSCAPE

  • 7.1 Company Profiles
    • 7.1.1 Toshiba Electronic Devices & Storage Corporation
    • 7.1.2 Nexperia Holding BV (Wingtech Technology Co. Ltd)
    • 7.1.3 Infineon Technologies AG
    • 7.1.4 Efficient Power Conversion Corporation
    • 7.1.5 NXP Semiconductors NV
    • 7.1.6 Texas Instruments Incorporated
    • 7.1.7 MACOM Technologies Solutions Holdings Inc.
    • 7.1.8 STMicroelectronics NV
    • 7.1.9 Microchip Technology Inc.
    • 7.1.10 Soitec
    • 7.1.11 Qorvo Inc.
    • 7.1.12 ROHM Co. Ltd

8 INVESTMENT ANALYSIS

9 FUTURE OF THE MARKET